Volume 51, Number 1, January 2011

• 
  Michael Mayer, Yi-Shao Lai: Copper Wire Bonding. 1-2
• 
  George G. Harman: Preface. 3
• 
  Z. W. Zhong: Overview of wire bonding using copper wire or insulated wire. 4-12
• 
  Bernd K. Appelt, Andy Tseng, Chun-Hsiung Chen, Yi-Shao Lai: Fine pitch copper wire bonding in high volume production. 13-20
• 
  Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen, Hao-Wen Hsueh: An investigation into the crystallization and electric flame-off characteristics of 20 μm copper wires. 21-24
• 
  I.-Ting Huang, Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen, Hao-Wen Hsueh: A study on the tensile fracture mechanism of 15 μm copper wire after EFO process. 25-29
• 
  J. Lee, M. Mayer, Y. Zhou, J. T. Moon, J. Persic: Influence of gold pick up on the hardness of copper free air ball. 30-37
• 
  J. Lee, M. Mayer, Y. Zhou, S. J. Hong, J. T. Moon: Silver pick up during tail formation in thermosonic wire bonding process. 38-42
• 
  A. Pequegnat, H. J. Kim, M. Mayer, Y. Zhou, J. Persic, J. T. Moon: Effect of gas type and flow rate on Cu free air ball formation in thermosonic wire bonding. 43-52
• 
  Chao-Ton Su, Cheng-Jung Yeh: Optimization of the Cu wire bonding process for IC assembly using Taguchi methods. 53-59
• 
  I. Qin, A. Shah, C. Huynh, M. Meyer, M. Mayer, Y. Zhou: Role of process parameters on bondability and pad damage indicators in copper ball bonding. 60-66
• 
  A. Shah, A. Rezvani, M. Mayer, Y. Zhou, J. Persic, J. T. Moon: Reduction of ultrasonic pad stress and aluminum splash in copper ball bonding. 67-74
• 
  Horst Clauberg, Petra Backus, Bob Chylak: Nickel-palladium bond pads for copper wire bonding. 75-80
• 
  Luke England, Siew Tze Eng, Chris Liew, Hock Heng Lim: Cu wire bond parameter optimization on various bond pad metallization and barrier layer material schemes. 81-87
• 
  Tomohiro Uno: Enhancing bondability with coated copper bonding wire. 88-96
• 
  Rainer Dohle, Matthias Petzold, Robert Klengel, Holger Schulze, Frank Rudolf: Room temperature wedge-wedge ultrasonic bonding using aluminum coated copper wire. 97-106
• 
  S. Schmitz, M. Schneider-Ramelow, S. Schröder: Influence of bonding process parameters on chip cratering and phase formation of Cu ball bonds on AlSiCu during storage at 200 °C. 107-112
• 
  H. Xu, C. Liu, V. V. Silberschmidt, Z. Chen, J. Wei, M. Sivakumar: Effect of bonding duration and substrate temperature in copper ball bonding on aluminium pads: A TEM study of interfacial evolution. 113-118
• 
  Cheng-Fu Yu, Chi-Ming Chan, Li-Chun Chan, Ker-Chang Hsieh: Cu wire bond microstructure analysis and failure mechanism. 119-124
• 
  Jiunn Chen, Yi-Shao Lai, Yi-Wun Wang, C. Robert Kao: Investigation of growth behavior of Al-Cu intermetallic compounds in Cu wire bonding. 125-129
• 
  Masakatsu Maeda, Takaaki Sato, Naoto Inoue, Daisuke Yagi, Yasuo Takahashi: Anomalous microstructure formed at the interface between copper ribbon and tin-deposited copper plate by ultrasonic bonding. 130-136
• 
  Charles J. Vath III, M. Gunasekaran, Ramkumar Malliah: Factors affecting the long-term stability of Cu/Al ball bonds subjected to standard and extended high temperature storage. 137-147
• 
  Tomohiro Uno: Bond reliability under humid environment for coated copper wire and bare copper wire. 148-156
• 
  Y. H. Tian, C. J. Hang, C. Q. Wang, G. Q. Ouyang, D. S. Yang, J. P. Zhao: Reliability and failure analysis of fine copper wire bonds encapsulated with commercial epoxy molding compound. 157-165
• 
  Catherine H. Chen, Shawn X. Zhang, S. W. Ricky Lee, Lebbai Mohamed: Investigation on copper diffusion depth in copper wire bonding. 166-170
• 
  Zhaohui Chen, Yong Liu, Sheng Liu: Modeling of copper wire bonding process on high power LEDs. 171-178
• 
  Hsiang-Chen Hsu, Wei-Yao Chang, Chang-Lin Yeh, Yi-Shao Lai: Characteristic of copper wire and transient analysis on wirebonding process. 179-186

Volume 51, Number 2, February 2011

• 
  Peter Ersland, Roberto Menozzi: Editorial. 187
• 
  William J. Roesch: The ROCS Workshop and 25 years of compound semiconductor reliability. 188-194
• 
  Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra: AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. 195-200
• 
  Jungwoo Joh, Jesús A. del Alamo, Kurt Langworthy, Sujing Xie, Tsvetanka Zheleva: Role of stress voltage on structural degradation of GaN high-electron-mobility transistors. 201-206
• 
  E. A. Douglas, C. Y. Chang, D. J. Cheney, B. P. Gila, C. F. Lo, Liu Lu, M. R. Holzworth, P. G. Whiting, K. S. Jones, G. D. Via, Jinhyung Kim, Soohwan Jang, Fan Ren, S. J. Pearton: AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress. 207-211
• 
  Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides: 1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH₃-rich conditions. 212-216
• 
  Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle: Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. 217-223
• 
  M. Cäsar, M. Dammann, V. Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher: Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. 224-228
• 
  D. Mari, Mirko Bernardoni, Giovanna Sozzi, Roberto Menozzi, G. A. Umana-Membreno, B. D. Nener: A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion. 229-234
• 
  Antonio Raffo, Sergio Di Falco, Giovanna Sozzi, Roberto Menozzi, Dominique M. M.-P. Schreurs, Giorgio Vannini: Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime. 235-239
• 
  David Littleton, Dorothy June M. Hamada, William J. Roesch: Drainage ratio impact on void creation in gold interconnect. 240-245
• 
  Michael Meeder, Leslie Marchut, Michael J. Antonell, Michael T. Fresina, Christopher E. Novak, Terry C. Darche: Application of Machine Model ESD tester to high volume capacitor reliability testing. 246-251

• 
  Daniel Lau, Bernard Fong: Special Issue on Prognostics and Health Management. 253-254
• 
  Kenji Hirohata, Katsumi Hisano, Minoru Mukai: Health-monitoring method of note PC for cooling performance degradation and load assessment. 255-262
• 
  C.-H. Wu, C.-H. Yang, S.-C. Lo, Nikhil M. Vichare, E. Rhem, Michael Pecht: Automatic data mining for telemetry database of computer systems. 263-269
• 
  Ling Yu, Peng Xu: Structural health monitoring based on continuous ACO method. 270-278
• 
  Gang Niu, Satnam Singh, Steven W. Holland, Michael Pecht: Health monitoring of electronic products based on Mahalanobis distance and Weibull decision metrics. 279-284
• 
  Wenbin Wang, Matthew J. Carr, Wenjia Xu, Khairy Kobbacy: A model for residual life prediction based on Brownian motion with an adaptive drift. 285-293
• 
  Qiang Miao, Liu Liu, Yuan Feng, Michael G. Pecht: Complex system maintainability verification with limited samples. 294-299
• 
  Yifan Zhou, Lin Ma, Joseph Mathew, Yong Sun, Rodney Wolff: Maintenance strategy optimization using a continuous-state partially observable semi-Markov decision process. 300-309
• 
  Mohamed El-Koujok, Rafael Gouriveau, Noureddine Zerhouni: Reducing arbitrary choices in model building for prognostics: An approach by applying parsimony principle on an evolving neuro-fuzzy system. 310-320

• 
  F. Alagi: A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs. 321-325
• 
  C. Roda Neve, Valeria Kilchytska, Joaquín Alvarado, D. Lederer, O. Militaru, Denis Flandre, Jean-Pierre Raskin: Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. 326-331
• 
  Yan Han, Bo Song, Shurong Dong, Mingliang Li, Fei Ma, Meng Miao, Kehan Zhu: Study of current saturation behaviors in dual direction SCR for ESD applications. 332-336
• 
  Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang: A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection. 337-341
• 
  Germán Álvarez-Botero, Reydezel Torres-Torres, Roberto Murphy-Arteaga: Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs. 342-349
• 
  Bartomeu Alorda, Gabriel Torrens, Sebastiàn A. Bota, Jaume Segura: 8T vs. 6T SRAM cell radiation robustness: A comparative analysis. 350-359
• 
  Ilbilge Dökme: The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height. 360-364
• 
  Miin-Horng Juang, Jim Yu, C. C. Hwang, D. C. Shye, J. L. Wang: Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation. 365-369
• 
  Engin Arslan, Serkan Bütün, Yasemin Safak, Habibe Uslu, Ilke Tasçioglu, Semsettin Altindal, Ekmel Özbay: Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures. 370-375
• 
  Ying Wang, Hai-fan Hu, Chao Cheng: Improved performance of trench power MOSFET with SiGeC-based channel. 376-380
• 
  Chao-Wei Lin, Hsien-Chin Chiu, Che-Kai Lin, Jeffrey S. Fu: High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P₂S₅/(NH₄)₂S_X + UV interface treatment. 381-385
• 
  A. Oukaour, Boubekeur Tala-Ighil, B. Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, Stéphane Lefebvre, B. Boudart: Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition. 386-391
• 
  Peter Sandborn, Varun J. Prabhakar, O. Ahmad: Forecasting electronic part procurement lifetimes to enable the management of DMSMS obsolescence. 392-399
• 
  Fong-Jung Yu, Yung-Yu Yang, Ming-Jaan Wang, Zhang Wu: Using EWMA control schemes for monitoring wafer quality in negative binomial process. 400-405
• 
  P. A. Agyakwa, M. R. Corfield, L. Yang, J. F. Li, V. M. F. Marques, C. M. Johnson: Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling. 406-415
• 
  Guojun Hu, Yong Goh Kim, Lim Judy: Micromechanical analysis of copper trace in printed circuit boards. 416-424
• 
  Juha-Veikko Voutilainen, Juha Häkkinen, Markku Moilanen: Solder interconnection failure time estimation based on the embedded precursor behaviour modelling. 425-436
• 
  Pyungho Shin, Sukjong Lee, Jaeyong Sung, Jong Hyeong Kim: Operability diagram of drop formation and its response to temperature variation in a piezoelectric inkjet nozzle. 437-444
• 
  Hsiu-Jen Lin, Tung-Han Chuang: Interfacial microstructure and bonding strength of Sn-3Ag-0.5Cu and Sn-3Ag-0.5Cu-0.5Ce-xZn solder BGA packages with immersion Ag surface finish. 445-452
• 
  M. Felczak, Boguslaw Wiecek: Application of genetic algorithms for electronic devices placement in structures with heat conduction through the substrate. 453-459
• 
  Farshad Firouzi, Mostafa E. Salehi, Fan Wang, Sied Mehdi Fakhraie: An accurate model for soft error rate estimation considering dynamic voltage and frequency scaling effects. 460-467
• 
  Jie Han, Hao Chen, Erin Boykin, José A. B. Fortes: Reliability evaluation of logic circuits using probabilistic gate models. 468-476
• 
  Seyyed Javad Seyyed Mahdavi, Karim Mohammadi: Improved single-pass approach for reliability analysis of digital combinational circuits. 477-484
• 
  Karthikeyan Lingasubramanian, Syed M. Alam, Sanjukta Bhanja: Maximum error modeling for fault-tolerant computation using maximum a posteriori (MAP) hypothesis. 485-501
• 
  Anirban Sengupta, Reza Sedaghat, Zhipeng Zeng: Rapid design space exploration by hybrid fuzzy search approach for optimal architecture determination of multi objective computing systems. 502-512
• 
  Ying Wang, Chao Cheng, Hai-fan Hu: Investigation of power Trench MOSFETs with retrograde body profile. 513-516

Volume 51, Number 3, March 2011

• 
  K. N. Tu: Reliability challenges in 3D IC packaging technology. 517-523

• 
  Robert O'Connor, Greg Hughes: The effect of a post processing thermal anneal on pre-existing and stress induced electrically active defects in ultra-thin SiON dielectric layers. 524-528
• 
  P. Holland, M. Elwin, I. Anteney, J. Ellis, L. Armstrong, G. Birchby, P. Igic: LDMOSFET with drain potential suppression for 100 V Power IC technology. 529-535
• 
  V. V. N. Obreja, C. Codreanu, D. Poenar, O. Buiu: Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic. 536-542
• 
  Saeed Mohammadi, Ali Afzali-Kusha, Saeed Mohammadi: Compact modeling of short-channel effects in symmetric and asymmetric 3-T/4-T double gate MOSFETs. 543-549
• 
  Fayçal Djeffal, T. Bentrcia, Mohamed Amir Abdi, T. Bendib: Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. 550-555
• 
  N. A. Hastas, N. Arpatzanis, C. A. Dimitriadis, Julien Brochet, Francois Templier, G. Kamarinos: Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors. 556-559
• 
  Vladimir Milovanovic, Ramses van der Toorn, Ralf Pijper: RF small signal avalanche for bipolar transistor circuit design: Characterization, modeling and repercussions. 560-565
• 
  J. Vobecký, V. Komarnitskyy, V. Záhlava: Molybdenum and low-temperature annealing of a silicon power P-i-N diode. 566-571
• 
  Ping Cheng, Yuming Zhang, Yimen Zhang: Characteristics of the intrinsic defects in unintentionally doped 4H-SiC after thermal annealing. 572-575
• 
  Engin Arslan, Serkan Bütün, Yasemin Safak, Hüseyin Çakmak, Hongbo Yu, Ekmel Özbay: Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes. 576-580
• 
  Z. Tekeli, M. Gökçen, S. Altindal, S. Özçelik, E. Özbay: On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al_0.3Ga_0.7N heterostructures. 581-586
• 
  Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta: Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. 587-596
• 
  V. S. Balderrama, Magali Estrada, Antonio Cerdeira, B. S. Soto-Cruz, Lluís F. Marsal, Josep Pallarès, Jairo C. Nolasco, Benjamín Iñíguez, E. Palomares, J. Albero: Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation. 597-601
• 
  Daniel Fernández, Jordi Madrenas, Jordi Cosp: A self-test and dynamics characterization circuit for MEMS electrostatic actuators. 602-609
• 
  W. L. Lu, Y. M. Hwang, C. T. Pan, S. C. Shen: Analyses of electromagnetic vibration-based generators fabricated with LTCC multilayer and silver spring-inducer. 610-620
• 
  Janusz Smulko, Kazimierz Józwiak, Marek Olesz, Lech Hasse: Acoustic emission for detecting deterioration of capacitors under aging. 621-627
• 
  F. Bossuyt, J. Guenther, Thomas Löher, Manuel Seckel, T. Sterken, J. de Vries: Cyclic endurance reliability of stretchable electronic substrates. 628-635
• 
  Jinglin Bi, Anmin Hu, Jing Hu, Tingbi Luo, Ming Li, Dali Mao: Effect of Cr additions on interfacial reaction between the Sn-Zn-Bi solder and Cu/electroplated Ni substrates. 636-641
• 
  M. Y. Tsai, C. W. Ting, C. Y. Huang, Yi-Shao Lai: Determination of residual strains of the EMC in PBGA during manufacturing and IR solder reflow processes. 642-648
• 
  Da Yu, Abdullah Al-Yafawi, Tung T. Nguyen, Seungbae Park, Soonwan Chung: High-cycle fatigue life prediction for Pb-free BGA under random vibration loading. 649-656
• 
  H. Tsukamoto, T. Nishimura, S. Suenaga, Stuart D. McDonald, K. W. Sweatman, Kazuhiro Nogita: The influence of solder composition on the impact strength of lead-free solder ball grid array joints. 657-667
• 
  Thomas Schreier-Alt, Frank Rehme, Frank Ansorge, Herbert Reichl: Simulation and experimental analysis of large area substrate overmolding with epoxy molding compounds. 668-675
• 
  Yee-Wen Yen, Chun-Yu Lee: ACF particle distribution in COG process. 676-684
• 
  Soojae Park, Claudius Feger: Thermal fracture toughness measurement for underfill during temperature change. 685-691
• 
  Reza Sedaghat, M. Reza Javaheri, Prabhleen K. Kalkat, Jalal Mohammad Chikhe: Switch-level emulation of strength-base soft error detection. 692-702
• 
  Pedro Reviriego, S. Liu, Juan Antonio Maestro: Mitigation of permanent faults in adaptive equalizers. 703-710
• 
  Igor Z. Milovanovic, Emina I. Milovanovic, Mile K. Stojcev, M. P. Bekakos: Orthogonal fault-tolerant systolic arrays for matrix multiplication. 711-725

Volume 51, Number 4, April 2011

• 
  Christopher Urban, James E. Moon, Ponnathpur R. Mukund: Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS processes. 727-732
• 
  El-Sayed A. M. Hasaneen, Mohamed A. A. Wahab, Mohamed G. Ahmed: Exact analytical model of single electron transistor for practical IC design. 733-745
• 
  D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai: Effects of La₂O₃ incorporation in HfO₂ gated nMOSFETs on low-frequency noise. 746-750
• 
  A. Srivastava, R. K. Nahar, Chandan Kumar Sarkar, W. P. Singh, Y. Malhotra: Study of hafnium oxide deposited using Dense Plasma Focus machine for film structure and electrical properties as a MOS device. 751-755
• 
  Shuqing Cao, Jung-Hoon Chun, Akram A. Salman, Stephen G. Beebe, Robert W. Dutton: Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology. 756-764
• 
  Pietro Maris Ferreira, Hervé Petit, Jean-François Naviner: A synthesis methodology for AMS/RF circuit reliability: Application to a DCO design. 765-772
• 
  Surendra S. Rathod, Ashok K. Saxena, Sudeb Dasgupta: A low-noise, process-variation-tolerant double-gate FinFET based sense amplifier. 773-780
• 
  Jen-Yu Jao, Chia-Feng Liu, Ming-Kun Chen, Ya-Chun Chuang, Ling-Sheng Jang: Electrical characterization of single cell in microfluidic device. 781-789
• 
  Arash Ahmadi, Mark Zwolinski: Fixed-point multiplication: A probabilistic bit-pattern view. 790-796
• 
  Pyungho Shin, Jaeyong Sung, Myeong Ho Lee: Control of droplet formation for low viscosity fluid by double waveforms applied to a piezoelectric inkjet nozzle. 797-804
• 
  Karol Malecha, Thomas Maeder, Caroline Jacq, Peter Ryser: Structuration of the low temperature co-fired ceramics (LTCC) using novel sacrificial graphite paste with PVA-propylene glycol-glycerol-water vehicle. 805-811
• 
  Yumi Kwon, Byung-seung Yim, Jongmin Kim, Jooheon Kim: Dispersion, hybrid interconnection and heat dissipation properties of functionalized carbon nanotubes in epoxy composites for electrically conductive adhesives (ECAs). 812-818
• 
  Yumi Kwon, Byung-seung Yim, Jongmin Kim, Jooheon Kim: Mechanical and wetting properties of epoxy resins: Amine-containing epoxy-terminated siloxane oligomer with or without reductant. 819-825
• 
  Hsien-Chie Cheng, Kun-Yu Hsieh, Kuo-Ming Chen: Thermal-mechanical optimization of a novel nanocomposite-film typed flip chip technology. 826-836
• 
  Peter Borgesen, Liang Yin, Pericles Kondos: Assessing the risk of "Kirkendall voiding" in Cu₃Sn. 837-846
• 
  M. He, C. Gaire, G.-C. Wang, T.-M. Lu: Study of metal adhesion on porous low-k dielectric using telephone cord buckling. 847-850
• 
  Byeung-Gee Kim, Sang-Mok Lee, Yun-Song Jo, Sun-Chul Kim, Kyoung-Moo Harr, Young-Ho Kim: Highly reliable, fine pitch chip on glass (COG) joints fabricated using Sn/Cu bumps and non-conductive adhesives. 851-859
• 
  Ching-Ho Chang, Wen-Bin Young: Development of a mathematical model for thermal-compression bonding of the COG packaging process using NCA. 860-865
• 
  Wenyan Gen, Xi Chen, Anmin Hu, Ming Li: Effect of Ag on oxidation of Cu-base leadframe. 866-870

Volume 51, Number 5, May 2011

• 
  Yi-Hsin Weng, Hui-Wen Tsai, Ming-Dou Ker: Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process. 871-878
• 
  Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai: Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. 879-884
• 
  Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst: Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. 885-888
• 
  Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby: The sensitivity of radiation-induced leakage to STI topology and sidewall doping. 889-894
• 
  Ming Yi, Wen-Yan Yin: Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method. 895-903
• 
  Donagh O'Mahony, Russell Duane, Tony Campagno, Liam Lewis, Nicolás Cordero, Pleun Maaskant, Finbarr Waldron, Brian Corbett: Thermal stability of SiC Schottky diode anode and cathode metalisations after 1000 h at 350 °C. 904-908
• 
  Hongxia Liu, Shulong Wang, Yue Hao: Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity. 909-913
• 
  Jiann-Shiun Yuan, Wen-Kuan Yeh, Shuyu Chen, Chia-Wei Hsu: NBTI reliability on high-k metal-gate SiGe transistor and circuit performances. 914-918
• 
  Pavel Poliakov, Pieter Blomme, Miguel Corbalan, Jan Van Houdt, Wim Dehaene: Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness. 919-924
• 
  Mingzhi Dai, Mingming Li, Guodong Wu, Li Li, Huang Jin: Transient current mechanism of lead zirconate titanate capacitors sputtered on La_0.65Sr_0.35MnO₃. 925-926
• 
  Ákos Nemcsics, Lajos Tóth, Laszlo Dobos, Andrea Stemmann: Facetting of the self-assembled droplet epitaxial GaAs quantum dot. 927-930
• 
  Wei-Hung Yau, Pai-Chung Tseng, Hua-Chiang Wen, Chien-Huang Tsai, Wu-Ching Chou: Luminescence properties of mechanically nanoindented ZnSe. 931-935
• 
  Xiangdong Xue, Chris Bailey, Hua Lu, Stoyan Stoyanov: Integration of analytical techniques in stochastic optimization of microsystem reliability. 936-945
• 
  Mohammed A. Alam, Michael H. Azarian, Michael D. Osterman, Michael Pecht: Temperature and voltage aging effects on electrical conduction mechanism in epoxy-BaTiO₃ composite dielectric used in embedded capacitors. 946-952
• 
  Bhavana N. Joshi, Yogesh S. Mhaisagar, Ashok M. Mahajan: Analysis of interconnect capacitance for sub nano CMOS technology using the low dielectric material. 953-958
• 
  Francisco Aznar, Santiago Celma, Belén Calvo: A 0.18 μm CMOS linear-in-dB AGC post-amplifier for optical communications. 959-964
• 
  Y. Celnikier, L. Benabou, L. Dupont, G. Coquery: Investigation of the heel crack mechanism in Al connections for power electronics modules. 965-974
• 
  Asit Kumar Gain, Y. C. Chan, Winco K. C. Yung: Microstructure, thermal analysis and hardness of a Sn-Ag-Cu-1 wt% nano-TiO₂ composite solder on flexible ball grid array substrates. 975-984
• 
  Yeong K. Kim, Jin Hyuk Gang, Bo-Young Lee: Material property effects on solder failure analyses. 985-993
• 
  Haixia Shang, Jianxin Gao, P. Ian Nicholson, Steve Kenny: An investigation of reliability of solder joints in microelectronic packages by high temperature moiré method. 994-1002
• 
  Ming Yao, Xuliang Zhang, Chaoyang Zhao, Jianguo Ma: Self-consistent design issues for high frequency Cu interconnect reliability incorporating skin effect. 1003-1010
• 
  Tong An, Fei Qin, Jiangang Li: Mechanical behavior of solder joints under dynamic four-point impact bending. 1011-1019
• 
  Fei Su, Ronghai Mao, Xiaoyan Wang, Guangzhou Wang, Haiyan Pan: Creep behaviour of Sn-3.8Ag-0.7Cu under the effect of electromigration: Experiments and modelling. 1020-1024

Volume 51, Number 6, June 2011

• 
  Artur Wymyslowski: 2010 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 1025-1026
• 
  O. Hölck, E. Dermitzaki, Bernhard Wunderle, Jörg Bauer, Bernd Michel: Basic thermo-mechanical property estimation of a 3D-crosslinked epoxy/SiO₂ interface using molecular modelling. 1027-1034
• 
  Nancy Iwamoto: Modeling mechanical properties of an epoxy using particle dynamics, as parameterized through molecular modeling. 1035-1045
• 
  Lukasz Dowhan, Artur Wymyslowski, Pawel Janus, Magdalena Ekwinska, Olaf Wittler: Extraction of elastic-plastic material properties of thin films through nanoindentaion technique with support of numerical methods. 1046-1053
• 
  L. I. J. C. Bergers, J. P. M. Hoefnagels, N. K. R. Delhey, M. G. D. Geers: Measuring time-dependent deformations in metallic MEMS. 1054-1059
• 
  Cédric Le Coq, Adellah Tougui, Marie-Pascale Stempin, Laurent Barreau: Optimization for simulation of WL-CSP subjected to drop-test with plasticity behavior. 1060-1068
• 
  Mario Gonzalez, Bart Vandevelde, Wim Christiaens, Yung-Yu Hsu, François Iker, Frederick Bossuyt, Jan Vanfleteren, Olaf van der Sluis, P. H. M. Timmermans: Design and implementation of flexible and stretchable systems. 1069-1076
• 
  Toni T. Mattila, Mervi Paulasto-Kröckel: Toward comprehensive reliability assessment of electronics by a combined loading approach. 1077-1091
• 
  Rene Kregting, Sander Gielen, Willem D. van Driel, Paul Alkemade, Hozan Miro, Jan-Dirk Kamminga: Local stress analysis on semiconductor devices by combined experimental-numerical procedure. 1092-1096

• 
  Shifeng Zhang, Yan Han, Koubao Ding, Bin Zhang, Jiaxian Hu: Investigation on hot-carrier-induced degradation of SOI NLIGBT. 1097-1104
• 
  Swagata Bhattacherjee, Abhijit Biswas: Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation. 1105-1112
• 
  J. K. Mee, R. A. B. Devine, L. Trombetta, R. J. Kaplar, P. Gouker: Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors. 1113-1117
• 
  Robert O'Connor, Greg Hughes, Thomas Kauerauf, Lars-Ake Ragnarsson: Reliability of thin ZrO₂ gate dielectric layers. 1118-1122
• 
  J. D. Lu, H. Y. Liu: Spin polarization in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes. 1123-1126
• 
  T. A. Nguyen, P.-Y. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau: Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. 1127-1135
• 
  Fabrice Rigaud, Jean Michel Portal, Hassen Aziza, Didier Née, Julien Vast, Fabrice Argoud, Bertrand Borot: Back-end soft and hard defect monitoring using a single test chip. 1136-1141
• 
  H. X. Xie, N. Chawla, Y.-L. Shen: Mechanisms of deformation in high-ductility Ce-containing Sn-Ag-Cu solder alloys. 1142-1147
• 
  Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou: Comparison of TID response in core, input/output and high voltage transistors for flash memory. 1148-1151
• 
  Chris J. Bleakley, Pedro Reviriego, Juan Antonio Maestro: Low-complexity Concurrent Error Detection for convolution with Fast Fourier Transforms. 1152-1156

Volume 51, Number 7, July 2011

• 
  Andrzej Dziedzic: 10th Electron Technology ELTE 2010 and 34th International Microelectronics and Packaging IMAPS/CPMT Poland Joint Conference - Guest Editorial. 1157-1158
• 
  Mariusz Kaczmarczyk, Maria Kaniewska, Olof Engström: The influence of inhomogeneous trap distribution on results of DLTS study. 1159-1161
• 
  Michal Zaborowski, Daniel Tomaszewski, Piotr Dumania, Piotr Grabiec: Development and characterisation of nanowire-based FETs. 1162-1165
• 
  Ran Yan, Abhinav Kranti, Isabelle Ferain, Chi-Woo Lee, Ran Yu, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge: Investigation of high-performance sub-50 nm junctionless nanowire transistors. 1166-1171
• 
  B. Majkusiak, R. B. Beck, A. Mazurak, J. Grabowski: Investigation of double barrier MOS tunnel diodes with PECVD silicon quantum well. 1172-1177
• 
  Marcin Iwanowicz, Jakub Jasinski, Grzegorz Gluszko, Lidia Lukasiak, Andrzej Jakubowski, Heinrich Gottlob, Mathias Schmidt: Studies of the quality of GdSiO-Si interface. 1178-1182
• 
  Malgorzata Kalisz, Robert Mroczynski, Romuald B. Beck: Improvement of immunity on MeV electron radiation of MOS structures by means of ultra-shallow fluorine implantation. 1183-1186
• 
  Piotr Firek, Jan Szmidt: MISFET structures with barium titanate as a dielectric layer for application in memory cells. 1187-1191
• 
  Stanislaw Kalicinski, Tomasz Bieniek, Pawel Janus, Piotr Grabiec: Determination of electrical and mechanical parameters in capacitive MEMS accelerometers using electrical measurements. 1192-1197
• 
  Krzysztof Tomasz Wojciechowski, Rafal Zybala, Ryszard Mania: High temperature CoSb₃-Cu junctions. 1198-1202
• 
  A. Wiatrowski, W. M. Posadowski, G. Józwiak, J. Serafinczuk, R. F. Szeloch, Teodor P. Gotszalk: Standard and self-sustained magnetron sputtering deposited Cu films investigated by means of AFM and XRD. 1203-1206
• 
  E. L. Prociów, T. Chodzinski: Study of electrical and optical properties of CN_x thin films deposited by reactive magnetron sputtering. 1207-1212
• 
  Karol Nitsch: Microelectronic materials and structures characterization by impedance spectroscopy. 1213-1218
• 
  M. W. Dudek, K. Nitsch, A. Dziedzic, T. Piasecki: Wide frequency range ac electrical characterization of thick-film microvaristors. 1219-1224
• 
  Katarzyna Tadaszak, Karol Nitsch, Tomasz Piasecki, Witold M. Posadowski: Electrical characterization of aluminium oxide-aluminium thin film composites by impedance spectroscopy. 1225-1229
• 
  F. Marcq, P. Demont, Philippe Monfraix, A. Peigney, Ch. Laurent, Tomasz Falat, F. Courtade, T. Jamin: Carbon nanotubes and silver flakes filled epoxy resin for new hybrid conductive adhesives. 1230-1234
• 
  Malgorzata Jakubowska, Mateusz Jarosz, Konrad Kielbasinski, Anna Mlozniak: New conductive thick-film paste based on silver nanopowder for high power and high temperature applications. 1235-1240
• 
  Damian Nowak, Andrzej Dziedzic: LTCC package for high temperature applications. 1241-1244
• 
  Thomas Maeder, Yannick Fournier, Jean-Bastien Coma, Nicolas Craquelin, Peter Ryser: Integrated SMD pressure/flow/temperature multisensor for compressed air in LTCC technology: Thermal flow and temperature sensing. 1245-1249
• 
  Karol Malecha, Mateusz Czok, Anna Hetnar, Anna Pawlik, Helena Sztajer, Leszek J. Golonka: Micro Ceramic Cell Analyzer (MCCA) - Preliminary results. 1250-1252
• 
  Michael Weilguni, Walter Smetana, Johann Nicolics, Wilfried Kausel, Werner Goebl: Influence of lamination parameters on mechanical properties of low temperature co-fired ceramic tapes. 1253-1256
• 
  Dominique Ortolino, Jaroslaw Kita, Roland Wurm, Emmanuel Blum, Karin Beart, Ralf Moos: Investigation of the short-time high-current behavior of vias manufactured in hybrid thick-film technology. 1257-1263
• 
  Adam Witold Stadler: Noise properties of thick-film resistors in extended temperature range. 1264-1270
• 
  Mateusz Kosikowski, Zbigniew Suszynski, Michal Bednarek: Processing and recognition of the thermal images using wavelet transforms. 1271-1275
• 
  Lukasz Dowhan, Artur Wymyslowski, Stanislaw Kalicinski, Pawel Janus: Numerical prototyping methods in microsystem accelerometers design. 1276-1282

Volume 51, Number 8, August 2011

• 
  F. Alagi: Hot-carrier-induced time dependent dielectric breakdown in high voltage pMOSFETs. 1283-1288
• 
  Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, K. Mourgues, V. Purohit, H. Maanane, J. P. Sipma, F. Cornu, Ph. Eudeline: Characterization and modeling of hot carrier injection in LDMOS for L-band radar application. 1289-1294
• 
  Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou: Total ionizing dose effects in elementary devices for 180-nm flash technologies. 1295-1301
• 
  Karan Kutty, Jiann-Shiun Yuan, Shuyu Chen: Evaluation of gate oxide breakdown effect on cascode class E power amplifier performance. 1302-1308
• 
  Martin Sauter, Werner Simbürger, David Johnsson, Matthias Stecher: On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP). 1309-1314
• 
  Chun-Yu Lin, Li-Wei Chu, Ming-Dou Ker: Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS process. 1315-1324
• 
  A. Pérez-Tomás, M. Placidi, Abel Fontserè, P. M. Gammon, M. R. Jennings: Temperature behavior and modeling of ohmic contacts to Si⁺ implanted n-type GaN. 1325-1329
• 
  S. Tahamtan, A. Goodarzi, S. P. Abbasi, A. Hodaei, M. S. Zabihi, J. Sabbaghzadeh: Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics. 1330-1336
• 
  Hsien-Chin Chiu, Chao-Hung Chen, Che-Kai Lin, Jeffrey S. Fu: High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT. 1337-1341
• 
  Ming He, Huafang Li, Pei-I. Wang, Toh-Ming Lu: Bias-temperature stress of Al on porous low-k dielectrics. 1342-1345
• 
  Martin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel: Investigation of the reliability of 4H-SiC MOS devices for high temperature applications. 1346-1350
• 
  Marcin Janicki, Jedrzej Banaszczyk, Bjorn Vermeersch, Gilbert De Mey, Andrzej Napieralski: Generation of reduced dynamic thermal models of electronic systems from time constant spectra of transient temperature responses. 1351-1355
• 
  C. Bona, F. Fiori: MOS power transistor model for Electromagnetic Susceptibility analysis. 1356-1364
• 
  S. K. Manhas, N. Singh, G. Q. Lo: Barrier layer thickness analysis for reliable copper plug process in CMOS technology. 1365-1371
• 
  Tong Hong Wang, Sara N. Paisner, Chang-Chi Lee, Susan Chen, Yi-Shao Lai: Effect of surface roughness of silicon die and copper heat spreader on thermal performance of HFCBGA. 1372-1376
• 
  Xi-Shu Wang, Xu-Dong Li, Huai-Hui Ren, Hai-Yan Zhao, Ryosuke Murai: SEM in situ study on high cyclic fatigue of SnPb-solder joint in the electronic packaging. 1377-1384
• 
  Tung T. Nguyen, Seungbae Park: Characterization of elasto-plastic behavior of actual SAC solder joints for drop test modeling. 1385-1392
• 
  Li-Lan Gao, Lei Wang, Hong Gao, Gang Chen, Xu Chen: Fatigue life evaluation of anisotropic conductive adhesive film joints under mechanical and hygrothermal loads. 1393-1397
• 
  Safieh Khodadoustan, Fatemeh Jalali, Alireza Ejlali: Reliability/energy trade-off in Bluetooth error control schemes. 1398-1412
• 
  Wojciech Toczek, Zbigniew Czaja: Diagnosis of fully differential circuits based on a fault dictionary implemented in the microcontroller systems. 1413-1421

Volume 51, Numbers 9-11, September - November 2011

• 
  Nathalie Labat, François Marc: Editorial. 1423-1424

• 
  V. Huard, N. Ruiz Amador, F. Cacho, E. Pion: A bottom-up approach for System-On-Chip reliability. 1425-1439
• 
  Jiann Min Chin, Vinod Narang, Xiaole Zhao, Meng Yeow Tay, Angeline Phoa, Venkat Ravikumar, Lwin Hnin Ei, Soon Huat Lim, Chea Wei Teo, Syahirah Zulkifli, Mei Chyn Ong, Ming Chuan Tan: Fault isolation in semiconductor product, process, physical and package failure analysis: Importance and overview. 1440-1448

• 
  Hao Cai, Hervé Petit, Jean-François Naviner: Reliability aware design of low power continuous-time sigma-delta modulator. 1449-1453
• 
  W. S. Zhao, T. Devolder, Yahya Lakys, Jacques-Olivier Klein, Claude Chappert, Pascale Mazoyer: Design considerations and strategies for high-reliable STT-MRAM. 1454-1458
• 
  Lirida A. B. Naviner, Jean-François Naviner, G. G. dos Santos Jr., E. Crespo Marques, N. M. Paiva Jr.: FIFA: A fault-injection-fault-analysis-based tool for reliability assessment at RTL level. 1459-1463
• 
  Olivia Bluder, Michael Glavanovics, Jürgen Pilz: Applying Bayesian mixtures-of-experts models to statistical description of smart power semiconductor reliability. 1464-1468
• 
  Jochen Schleifer, Thomas Coenen, Tobias G. Noll: Statistical modeling of reliability in logic devices. 1469-1473
• 
  Yuan Li, Romain Delangle, Xiao-mei Zhang, Bart Hovens: Reliability assessment on new reprogrammable non-volatile memory devices based on SiCr-O. 1474-1478
• 
  Mauro Ciappa, Luigi Mangiacapra, Maria Stangoni, Stephan Ott, Wolfgang Fichtner: Design of optimum electron beam irradiation processes for the reliability of electric cables used in critical applications. 1479-1483
• 
  Daniel Siemaszko, Serge Pittet: Impact of modularity and redundancy in optimising the reliability of power systems that include a large number of power converters. 1484-1488
• 
  Tian Ban, Lirida A. B. Naviner: Progressive module redundancy for fault-tolerant designs in nanoelectronics. 1489-1492
• 
  Jean-Baptiste Gros, Geneviève Duchamp, Jean-Luc Levant, Christian Marot: Control of the electromagnetic compatibility: An issue for IC reliability. 1493-1497
• 
  Jinhui Wang, Na Gong, Ligang Hou, Xiaohong Peng, Ramalingam Sridhar, Wuchen Wu: Leakage current, active power, and delay analysis of dynamic dual V_t CMOS circuits under P-V-T fluctuations. 1498-1502
• 
  Marcantonio Catelani, Lorenzo Ciani, V. Luongo: A simplified procedure for the analysis of Safety Instrumented Systems in the process industry application. 1503-1507

• 
  F. Arnaud, L. Pinzelli, C. Gallon, M. Rafik, P. Mora, Frédéric Boeuf: Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies. 1508-1514
• 
  Ru Huang, Runsheng Wang, Changze Liu, Liangliang Zhang, Jing Zhuge, Yu Tao, Jinbin Zou, Yuchao Liu, Yangyuan Wang: HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors. 1515-1520
• 
  P. C. Feijoo, M. Cho, M. Togo, E. San Andrés, Guido Groeseneken: Positive bias temperature instabilities on sub-nanometer EOT FinFETs. 1521-1524
• 
  Stanislav Tyaginov, Ivan Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, E. Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser: An analytical approach for physical modeling of hot-carrier induced degradation. 1525-1529
• 
  Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel: Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. 1530-1534
• 
  E. Miranda, C. Mahata, T. Das, C. K. Maiti: An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown. 1535-1539
• 
  Ivica Manic, Danijel Dankovic, Aneta Prijic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Zoran Prijic, Ninoslav Stojadinovic: NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions. 1540-1543
• 
  Seung Min Lee, Dong Hun Lee, Jae Ki Lee, Jong-Tae Park: Concurrent PBTI and hot carrier degradation in n-channel MuGFETs. 1544-1546
• 
  Jin-Young Kim, Chong-Gun Yu, Jong-Tae Park: Effects of device layout on the drain breakdown voltages in MuGFETs. 1547-1550
• 
  M. A. Belaïd, M. Gares, K. Daoud, Ph. Eudeline: S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. 1551-1556
• 
  B. Li, N. Berbel, Alexandre Boyer, Sonia Bendhia, Raúl Fernández-García: Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences. 1557-1560
• 
  Y. Joly, Laurent Lopez, Jean Michel Portal, Hassen Aziza, Jean-Luc Ogier, Y. Bert, F. Julien, Pascal Fornara: Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress. 1561-1563
• 
  N. Berbel, Raúl Fernández-García, Ignacio Gil, B. Li, Alexandre Boyer, Sonia Bendhia: Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout. 1564-1567

• 
  V. M. Dwyer: Analysis of critical-length data from Electromigration failure studies. 1568-1572
• 
  R. L. de Orio, Hajdin Ceric, Siegfried Selberherr: A compact model for early electromigration failures of copper dual-damascene interconnects. 1573-1577
• 
  M. Lofrano, K. Croes, Ingrid De Wolf, C. J. Wilson: Influence of test structure design on stress-induced-voiding using an experimentally validated Finite Element Modeling approach. 1578-1581
• 
  Muhammad Bashir, Linda Milor, Dae Hyun Kim, Sung Kyu Lim: Impact of irregular geometries on low-k dielectric breakdown. 1582-1586
• 
  Irina Bauer, Kirsten Weide-Zaage, Lutz Meinshausen: Influence of air gaps on the thermal-electrical-mechanical behavior of a copper metallization. 1587-1591

• 
  Dionyz Pogany, Sergey Bychikhin, Michael Heer, W. Mamanee, Erich Gornik: Application of transient interferometric mapping method for ESD and latch-up analysis. 1592-1596
• 
  P. Besse, K. Abouda, C. Abouda: Identifying electrical mechanisms responsible for functional failures during harsh external ESD and EMC aggression. 1597-1601
• 
  Augusto Tazzoli, Isabella Rossetto, Enrico Zanoni, Dai Yufeng, Tiziana Tomasi, Gaudenzio Meneghesso: ESD sensitivity of a GaAs MMIC microwave power amplifier. 1602-1607
• 
  Philippe Galy, J. Bourgeat, J. Jimenez, B. Jacquier, D. Marin-Cudraz, Sylvain Dudit: Reliability impact due to high current, lattice and hot carriers temperatures on β^(2×2) matrix ESD power devices for advanced CMOS technologies. 1608-1613
• 
  J. Bourgeat, Philippe Galy, A. Dray, J. Jimenez, D. Marin-Cudraz, B. Jacquier: A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node. 1614-1617

• 
  Peter Jacob: From component to system failure analysis - The future challenge within work-sharing supply chains. 1618-1623
• 
  Kiyoshi Nikawa, Masatsugu Yamashita, Toru Matsumoto, Katsuyoshi Miura, Yoshihiro Midoh, Koji Nakamae: The combinational or selective usage of the laser SQUID microscope, the non-bias laser terahertz emission microscope, and fault simulations in non-electrical-contact fault localization. 1624-1631
• 
  Arkadiusz Glowacki, Christian Boit, Philippe Perdu: Performance improvement of Si-CCD detector based backside reflected light and photon emission microscopy by FIB ultimate substrate thinning. 1632-1636
• 
  B. B. Goldberg, A. Yurt, Y. Lu, E. Ramsay, F. H. Köklü, J. Mertz, T. G. Bifano, M. S. Ünlü: Chromatic and spherical aberration correction for silicon aplanatic solid immersion lens for fault isolation and photon emission microscopy of integrated circuits. 1637-1639
• 
  G. Bascoul, Philippe Perdu, A. Benigni, Sylvain Dudit, Guillaume Celi, Dean Lewis: Time Resolved Imaging: From logical states to events, a new and efficient pattern matching method for VLSI analysis. 1640-1645
• 
  Thierry Parrassin, Guillaume Celi, Sylvain Dudit, Michel Vallet: Failure analysis defect location on a real case 55 nm memory using dynamic power supply emulation. 1646-1651
• 
  Sanjib Kumar Brahma, Arkadiusz Glowacki, Reiner Leihkauf, Christian Boit: Laser induced impact ionization effect in MOSFET during 1064 nm laser stimulation. 1652-1657
• 
  R. Llido, J. Gomez, Vincent Goubier, N. Froidevaux, L. Dufayard, G. Haller, Vincent Pouget, Dean Lewis: Photoelectric Laser Stimulation applied to Latch-Up phenomenon and localization of parasitic transistors in an industrial failure analysis laboratory. 1658-1661
• 
  Guillaume Celi, Sylvain Dudit, Thierry Parrassin, Philippe Perdu, Antoine Reverdy, Dean Lewis, Michel Vallet: LVI detection on passive structure in advance CMOS technology: New opportunities for device analysis. 1662-1667
• 
  Cathy Kardach, I. Kapilevich, Jeffrey A. Block, Ted Lundquist, Steven Kasapi, J. Liao, Yin S. Ng, Bruce Cory: Foundry workflow for dynamic-EFA-based yield ramp. 1668-1672
• 
  Aniello Esposito, Mauro Ciappa, Wolfgang Fichtner: Synthesis of scanning electron microscopy images by high performance computing for the metrology of advanced CMOS processes. 1673-1678

• 
  A. Hensler, D. Wingert, Ch. Herold, J. Lutz, M. Thoben: Thermal impedance spectroscopy of power modules. 1679-1683
• 
  F. Infante, Philippe Perdu, H. B. Kor, C. L. Gan, Dean Lewis: Magnetic field spatial Fourier analysis: A new opportunity for high resolution current localization. 1684-1688
• 
  Yuya Kasho, Hidetoshi Hirai, Masanori Tsukuda, Ichiro Omura: Tiny-scale "stealth" current sensor to probe power semiconductor device failure. 1689-1692
• 
  T. Delaroque, B. Domengès, A. Colder, K. Danilo: Comprehensive nanostructural study of SSRM nanocontact on silicon. 1693-1696
• 
  J. G. van Hassel, G. A. D. Bock, G. van den Berg: Failure mechanisms in advanced BCD technology during reliability qualification. 1697-1700
• 
  L. Saury, S. Cany: Dynamic defect localization using FPGA to monitor digital values. 1701-1704
• 
  A. Laroche, P. Rousseille, T. Zirilli: Backside failure analysis case study: Implementation of innovative Local Backside Deprocessing technique. 1705-1709

• 
  Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, O. Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, M. Schulz, S. Singwald, Markus Weyers, R. Zhytnytska: Reliability issues of GaN based high voltage power devices. 1710-1716
• 
  Denis Marcon, Xuanwu Kang, J. Viaene, Marleen Van Hove, Puneet Srivastava, Stefaan Decoutere, R. Mertens, G. Borghs: GaN-based HEMTs tested under high temperature storage test. 1717-1720
• 
  Rui Liu, Dominique M. M.-P. Schreurs, Walter De Raedt, Frederik Vanaverbeke, J. Das, Robert Mertens, Ingrid De Wolf: Electrical characterization and reliability study of integrated GaN power amplifier in multi-layer thin-film technology. 1721-1724
• 
  M. Riccio, A. Pantellini, Andrea Irace, Giovanni Breglio, A. Nanni, Claudio Lanzieri: Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology. 1725-1729
• 
  G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, C. Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean Godin: Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses. 1730-1735
• 
  Sudip Ghosh, Brice Grandchamp, G. A. Koné, François Marc, C. Maneux, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Jean Godin: Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design. 1736-1741
• 
  Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni: Degradation mechanisms of high-power white LEDs activated by current and temperature. 1742-1746
• 
  Nicola Trivellin, Matteo Meneghini, C. De Santi, S. Vaccari, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, S. Takigawa, Tsuyoshi Tanaka, Daisuke Ueda: Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency. 1747-1751
• 
  Massimo Vanzi, G. Mura, G. Martines: DC parameters for laser diodes from experimental curves. 1752-1756
• 
  Tsung-Lin Chou, Shin-Yueh Yang, Chung-Jung Wu, Cheng-Nan Han, Kuo-Ning Chiang: Measurement and simulation of interfacial adhesion strength between SiO₂ thin film and III-V material. 1757-1761
• 
  D. Bari, N. Wrachien, R. Tagliaferro, Stefano Penna, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, A. Cester: Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs). 1762-1766
• 
  Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo: Operation of SiC normally-off JFET at the edges of its safe operating area. 1767-1772
• 
  Alberto Castellazzi, T. Takuno, R. Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara: A study of SiC Power BJT performance and robustness. 1773-1777
• 
  A. Testa, S. De Caro, Sebastiano Russo, D. Patti, Lucia Torrisi: High temperature long term stability of SiC Schottky diodes. 1778-1782
• 
  S. Khemiri, M. Kadi, A. Louis: Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress. 1783-1787
• 
  Rui Liu, Dominique M. M.-P. Schreurs, Walter De Raedt, Frederik Vanaverbeke, Robert Mertens, Ingrid De Wolf: Thermal optimization of GaN-on-Si HEMTs with plastic package. 1788-1791
• 
  Edward Namkyu Cho, Jung Han Kang, Ilgu Yun: Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors. 1792-1795
• 
  F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J. L. Trolet, M. Piccione, C. Gaquière: Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. 1796-1800
• 
  M. Béranger, N. Vallet, M. Dorel, P. Huet, K. Cadoret: QALT study of scintillating material in digital flat panels for medical imaging. 1801-1805
• 
  S. I. Chan, W. S. Hong, K. T. Kim, Y. G. Yoon, J. H. Han, J. S. Jang: Accelerated life test of high power white light emitting diodes based on package failure mechanisms. 1806-1809

• 
  Usama Zaghloul, George Papaioannou, Bharat Bhushan, Fabio Coccetti, Patrick Pons, Robert Plana: On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel characterization methodologies. 1810-1818
• 
  T. Y. Hung, S. Y. Chiang, C. J. Huang, C. C. Lee, K. N. Chiang: Thermal-mechanical behavior of the bonding wire for a power module subjected to the power cycling test. 1819-1823
• 
  S. Pietranico, Stéphane Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps: A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices. 1824-1829
• 
  J. P. Ousten, Zoubir Khatir: Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications. 1830-1835
• 
  T. Asada, Y. Yagi, M. Usui, T. Suzuki, N. Ohno: Warpage analysis of layered structures connected by direct brazing. 1836-1839
• 
  Hisashi Tanie, Kazuhiko Nakane, Yusuke Urata, Masatoshi Tsuda, Nobutada Ohno: Warpage variations of Si/solder/OFHC-Cu layered plates subjected to cyclic thermal loading. 1840-1844
• 
  A. Aubert, S. Jacques, S. Pétremont, Nathalie Labat, Hélène Frémont: Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow. 1845-1849
• 
  Hongbin Shi, Faxing Che, Toshitsugu Ueda: Experiment and numerical analysis for edge and corner bonded PoP bottom package assemblies under four-point bending. 1850-1855
• 
  Ingrid De Wolf, K. Croes, O. Varela Pedreira, Riet Labie, A. Redolfi, M. Van De Peer, Kris Vanstreels, C. Okoro, Bart Vandevelde, Eric Beyne: Cu pumping in TSVs: Effect of pre-CMP thermal budget. 1856-1859
• 
  Lutz Meinshausen, Kirsten Weide-Zaage, Hélène Frémont: Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps. 1860-1864
• 
  R. T. H. Rongen, A. van IJzerloo, C. Cotofana, K. M. Lan: Cratering response method to study the effect of ultrasonic energy on Cu-wire bonding quality. 1865-1868
• 
  J. Iannacci, A. Faes, A. Repchankova, Augusto Tazzoli, Gaudenzio Meneghesso: An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches. 1869-1873
• 
  M. Koutsoureli, G. J. Papaioannou: Determination of bulk discharge current in the dielectric film of MEMS capacitive switches. 1874-1877
• 
  B. Wang, S. Tanaka, B. Guo, G. Vereecke, S. Severi, Ann Witvrouw, Martine Wevers, Ingrid De Wolf: Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS. 1878-1881
• 
  L. Yang, P. A. Agyakwa, C. M. Johnson: A time-domain physics-of-failure model for the lifetime prediction of wire bond interconnects. 1882-1886
• 
  A. Massenz, M. Barbato, V. Giliberto, B. Margesin, S. Colpo, Gaudenzio Meneghesso: Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test. 1887-1891
• 
  Y. Celnikier, L. Dupont, E. Hervé, G. Coquery, L. Benabou: Optimization of wire connections design for power electronics. 1892-1897
• 
  Hongbin Shi, Toshitsugu Ueda: Comparative studies on solder joint reliability of CTBGA assemblies with various adhesives using the array-based package shear test. 1898-1902
• 
  C. Busca, Remus Teodorescu, Frede Blaabjerg, Stig Munk-Nielsen, Lars Helle, T. Abeyasekera, Pedro Rodríguez: An overview of the reliability prediction related aspects of high power IGBTs in wind power applications. 1903-1907

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  Y. Weber: Mechanism of breakdown voltage wavering in power MOSFET induced by silicon crystalline defect. 1908-1912
• 
  Helmut Köck, Christian Djelassi, Stefano de Filippis, Robert Illing, Michael Nelhiebel, Markus Ladurner, Michael Glavanovics, Dionyz Pogany: Improved thermal management of low voltage power devices with optimized bond wire positions. 1913-1918
• 
  Frédéric Richardeau, Zhifeng Dou, Emmanuel Sarraute, Jean-Marc Blaquière, Didier Flumian: Comparison of IGBT short-circuit failure "ohmic mode": Epoxy molded package versus silicone gel module for new fail-safe and interruptible power converters. 1919-1926
• 
  Michael Nelhiebel, Robert Illing, C. Schreiber, S. Wöhlert, S. Lanzerstorfer, Markus Ladurner, C. Kadow, Stefan Decker, D. Dibra, H. Unterwalcher, M. Rogalli, W. Robl, T. Herzig, M. Poschgan, M. Inselsbacher, Michael Glavanovics, Sylvain Fraïssé: A reliable technology concept for active power cycling to extreme temperatures. 1927-1932

Volume 51, Number 12, December 2011

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  Blerina Aliaj, Vladislav A. Vashchenko, Andrei Shibkov, Juin J. Liou: Self-protection capability of integrated NLDMOS power arrays in ESD pulse regimes. 2015-2030
• 
  Kenny C. Otiaba, Ndy N. Ekere, R. S. Bhatti, S. Mallik, M. O. Alam, Emeka H. Amalu: Thermal interface materials for automotive electronic control unit: Trends, technology and R&D challenges. 2031-2043
• 
  Denise C. Lugo Muñoz, Juan Muci, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Michelly de Souza, Marcelo A. Pavanello: An explicit multi-exponential model for semiconductor junctions with series and shunt resistances. 2044-2048
• 
  Yang-Hua Chang, Yao-Jen Liu: A self-consistent extraction procedure for source/drain resistance in MOSFETs. 2049-2052
• 
  Cong Li, Yiqi Zhuang, Ru Han, Gang Jin, Junlin Bao: Analytical threshold voltage model for cylindrical surrounding-gate MOSFET with electrically induced source/drain extensions. 2053-2058
• 
  Yang-Hua Chang, Chia-Hao Chang: Improving an LDMOST by variation of lateral doping on epitaxial-layer drift region. 2059-2063
• 
  Wing-Shan Tam, Sik-Lam Siu, Bing-Liang Yang, Chi-Wah Kok, Hei Wong: Off-state drain breakdown mechanisms of VDMOS with anti-JFET implantation. 2064-2068
• 
  Mehdi Saremi, Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Mohammadi: A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement. 2069-2076
• 
  Jianhua Zhou, Albert Pang, Steam Cao, Shichang Zou: Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 μm partially depleted silicon-on-insulator n-MOSFETs. 2077-2080
• 
  Guntrade Roll, Matthias Goldbach, Lothar Frey: Leakage current and defect characterization of p⁺n-source/drain diodes. 2081-2085
• 
  Haiqing Nan, Ken Choi: Novel radiation hardened latch design considering process, voltage and temperature variations for nanoscale CMOS technology. 2086-2092
• 
  R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, J. Mekki, André Touboul, Frédéric Saigné: High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. 2093-2096
• 
  W. Hourani, B. Gautier, L. Militaru, D. Albertini, A. Descamps-Mandine, R. Arinero: Influence of the surrounding ambient on the reliability of the electrical characterization of thin oxide layers using an atomic force microscope. 2097-2101
• 
  D. Spassov, E. Atanassova, Albena Paskaleva: Lightly Al-doped Ta₂O₅: Electrical properties and mechanisms of conductivity. 2102-2109
• 
  Chun-Chang Lu, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Shih-Cheng Chang, Tien-Ko Wang, Fu-Chung Hou, Yao-Tung Hsu: Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs. 2110-2114
• 
  X. M. Yang, L. J. Zhuge, X. M. Wu, T. Yu, S. B. Ge: The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD. 2115-2118
• 
  Alex Axelevitch, B. Gorenstein, Gady Golan: Investigation of the electrical transport mechanism in VO_x thin films. 2119-2123
• 
  Fei Ma, Yan Han, Bo Song, Shurong Dong, Meng Miao, Jianfeng Zheng, Jian Wu, Kehan Zhu: Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process. 2124-2128
• 
  Guido Notermans, Dejan M. Maksimovic, Gerd Vermont, Michiel van Maasakkers, Fredrik Pusa, Theo Smedes: On-chip system level protection of FM antenna pin with improved linearity. 2129-2136
• 
  Hsien-Chin Chiu, Chia-Shih Cheng, Hsuan-Ling Kao, Jeffrey S. Fu, Qiang Cui, Juin J. Liou: A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology. 2137-2142
• 
  Mahdiar Hosein Ghadiry, Mahdieh Nadi Senjani, M. T. Ahmadi, Asrulnizam Bin Abd Manaf: A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors. 2143-2146
• 
  Xiang Liu, Jiann-shiun Yuan, Juin J. Liou: Thermal reliability of VCO using InGaP/GaAs HBTs. 2147-2152
• 
  S. Demirezen, S. Altindal, S. Özçelik, E. Özbay: On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al_0.22Ga_0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods. 2153-2162
• 
  Hsien-Chin Chiu, Chao-Wei Lin, Che-Kai Lin, Hsuan-Ling Kao, Jeffrey S. Fu: Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs. 2163-2167
• 
  Ling Lv, J. G. Ma, Y. R. Cao, J. C. Zhang, W. Zhang, L. Li, S. R. Xu, X. H. Ma, X. T. Ren, Y. Hao: Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors. 2168-2172
• 
  S. Omar, S. Mandal, A. Ashok, A. R. Harish, M. Katiyar: Organic inverter: Theoretical analysis using load matching technique. 2173-2178
• 
  B. Güzeldir, M. Saglam, A. Ates: Laterally inhomogeneous barrier analysis of identically prepared Cd/CdS/n-Si/Au-Sb structures by SILAR method. 2179-2184
• 
  P. Bhattacharyya, Guru P. Mishra, Samir Kumar Sarkar: The effect of surface modification and catalytic metal contact on methane sensing performance of nano-ZnO-Si heterojunction sensor. 2185-2194
• 
  F. Yakuphanoglu: Controlling of electrical and interface state density properties of ZnO: Co/p-silicon diode structures by compositional fraction of cobalt dopant. 2195-2199
• 
  F. Yakuphanoglu,