"LDMOSFET with drain potential suppression for 100 V Power IC technology."

Paul M. Holland et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.09.015

access: closed

type: Journal Article

metadata version: 2023-10-31

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Paul M. Holland, Matt P. Elwin, Iain Anteney, John Ellis, Laurence Armstrong, Glen Birchby, Petar Igic:
LDMOSFET with drain potential suppression for 100 V Power IC technology. Microelectron. Reliab. 51(3): 529-535 (2011)

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