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"AlGaN/GaN HEMT device reliability and degradation evolution: Importance of ..."
Martin Kuball et al. (2011)
- Martin Kuball, Milan Tapajna
, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra:
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectron. Reliab. 51(2): 195-200 (2011)
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