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"MOS-IGBT power devices for high-temperature operation in smart power SOI ..."

Houssam Arbess, Marise Bafleur (2011)

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DOI: 10.1016/J.MICROREL.2011.07.037

access: closed

type: Journal Article

metadata version: 2021-07-25

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Houssam Arbess, Marise Bafleur:
MOS-IGBT power devices for high-temperature operation in smart power SOI technology. Microelectron. Reliab. 51(9-11): 1980-1984 (2011)

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