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ORCIDCarlo De Santi
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2020 – today
- 2024
[c23]M. Boito, Manuel Fregolent, Carlo De Santi
, A. Abbisogni, S. Smerzi, Isabella Rossetto, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach. IRPS 2024: 1-5- [c22]Davide Favero, Carlo De Santi, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. IRPS 2024: 1-4 - [c21]Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. IRPS 2024: 1-5 - [c20]Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra:
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS 2024: 5 - [c19]A. Cavaliere, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs. IRPS 2024: 17 - [c18]M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini:
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. IRPS 2024: 54 - 2023
- [c17]Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS 2023: 1-6 - [c16]Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. IRPS 2023: 1-5 - [c15]Zhan Gao, Francesca Chiocchetta, Fabiana Rampazzo, Carlo De Santi, Mirko Fornasier, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni:
Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests. IRPS 2023: 1-5 - 2022
- [c14]Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini:
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. IRPS 2022: 5 - [c13]Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Modeling Hot-Electron Trapping in GaN-based HEMTs. IRPS 2022: 10 - [c12]Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS 2022: 11 - [c11]Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS 2022: 20-1 - [c10]Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz:
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS 2022: 51-1 - 2021
- [j22]Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Matteo Meneghini, Michele Forzan, Fabrizio Dughiero, Enrico Zanoni, Gaudenzio Meneghesso:
Full Optical Contactless Thermometry Based on LED Photoluminescence. IEEE Trans. Instrum. Meas. 70: 1-8 (2021) - [c9]Matteo Meneghini, Nicola Modolo, Arianna Nardo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Christian Koller, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni:
Charge Trapping in GaN Power Transistors: Challenges and Perspectives. BCICTS 2021: 1-4 - [c8]Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini:
Current crowding as a major cause for InGaN LED degradation at extreme high current density. IECON 2021: 1-6 - [c7]Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni:
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. IRPS 2021: 1-2 - [c6]Nicola Modolo, Andrea Minetto, Carlo De Santi, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level. IRPS 2021: 1-5 - 2020
- [c5]Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS 2020: 1-4 - [c4]Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere:
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c3]Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda:
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. IRPS 2019: 1-6 - 2018
- [j21]Gaudenzio Meneghesso, Matteo Meneghini, Carlo De Santi, Maria Ruzzarin, Enrico Zanoni:
Positive and negative threshold voltage instabilities in GaN-based transistors. Microelectron. Reliab. 80: 257-265 (2018) - [j20]Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni:
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectron. Reliab. 88-90: 397-401 (2018) - [j19]Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of GaN-on-GaN vertical diodes submitted to high current stress. Microelectron. Reliab. 88-90: 568-571 (2018) - [j18]Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. 88-90: 620-626 (2018) - [j17]Matteo Buffolo, M. Pietrobon, Carlo De Santi, F. Samparisi, Michael L. Davenport, John E. Bowers, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits. Microelectron. Reliab. 88-90: 855-858 (2018) - [j16]Desiree Monti, Matteo Meneghini, Carlo De Santi, Agata Bojarska, Piotr Perlin, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes. Microelectron. Reliab. 88-90: 864-867 (2018) - [j15]Nicola Trivellin, Desiree Monti, Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Current induced degradation study on state of the art DUV LEDs. Microelectron. Reliab. 88-90: 868-872 (2018) - [j14]N. Renso, Matteo Buffolo, Carlo De Santi, M. Ronzani, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress. Microelectron. Reliab. 88-90: 887-890 (2018) - [c2]Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios:
Degradation of vertical GaN FETs under gate and drain stress. IRPS 2018: 4 - 2017
- [j13]N. Renso, Matteo Meneghini, Matteo Buffolo, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni:
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density. Microelectron. Reliab. 76-77: 556-560 (2017) - [j12]Carlo De Santi, Matteo Meneghini, Alessandro Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso:
Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. Microelectron. Reliab. 76-77: 575-578 (2017) - [j11]Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Agata Bojarska, Piotr Perlin:
Long-term degradation of InGaN-based laser diodes: Role of defects. Microelectron. Reliab. 76-77: 584-587 (2017) - 2016
- [j10]Matteo Buffolo, Matteo Meneghini, Carlo De Santi, Henry Felber, N. Renso, Gaudenzio Meneghesso, Enrico Zanoni:
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs. Microelectron. Reliab. 64: 610-613 (2016) - [j9]Marco La Grassa, Matteo Meneghini, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso:
Degradation of InGaN-based LEDs related to charge diffusion and build-up. Microelectron. Reliab. 64: 614-616 (2016) - [j8]Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes. Microelectron. Reliab. 64: 623-626 (2016) - 2015
- [j7]Matteo Buffolo, Carlo De Santi, Matteo Meneghini, D. Rigon, Gaudenzio Meneghesso, Enrico Zanoni:
Long-term degradation mechanisms of mid-power LEDs for lighting applications. Microelectron. Reliab. 55(9-10): 1754-1758 (2015) - [j6]Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, Desiree Monti, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Failure causes and mechanisms of retrofit LED lamps. Microelectron. Reliab. 55(9-10): 1765-1769 (2015) - [j5]Marco La Grassa, Matteo Meneghini, Carlo De Santi, Marco Mandurrino, Michele Goano, Francesco Bertazzi, Roland Zeisel, Bastian Galler, Gaudenzio Meneghesso, Enrico Zanoni:
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. Microelectron. Reliab. 55(9-10): 1775-1778 (2015) - [c1]Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Analysis of the mechanisms limiting the reliability of retrofit LED lamps. RTSI 2015: 1-4 - 2014
- [j4]Matteo Dal Lago, Matteo Meneghini, Carlo De Santi, Marco Barbato, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni:
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms. Microelectron. Reliab. 54(9-10): 2138-2141 (2014) - [j3]Carlo De Santi, Matteo Meneghini, Michael Marioli, Matteo Buffolo, Nicola Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U. T. Schwarz, Gaudenzio Meneghesso, Enrico Zanoni:
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage. Microelectron. Reliab. 54(9-10): 2147-2150 (2014) - 2013
- [j2]Carlo De Santi, Matteo Meneghini, S. Carraro, Simone Vaccari, Nicola Trivellin, Stefania Marconi, Michael Marioli, Gaudenzio Meneghesso, Enrico Zanoni:
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes. Microelectron. Reliab. 53(9-11): 1534-1537 (2013) - 2011
- [j1]Nicola Trivellin, Matteo Meneghini, Carlo De Santi, Simone Vaccari, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, S. Takigawa, Tsuyoshi Tanaka, Daisuke Ueda:
Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency. Microelectron. Reliab. 51(9-11): 1747-1751 (2011)
Coauthor Index
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