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ORCIDGuido Groeseneken
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- affiliation: Catholic University of Leuven, Belgium
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2020 – today
- 2023
[c51]Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
:
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS 2023: 1-10- [c50]W.-C. Chen, S.-H. Chen, Anabela Veloso, Kateryna Serbulova, Geert Hellings, Guido Groeseneken:
Upcoming Challenges of ESD Reliability in DTCO with BS-PDN Routing via BPRs. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c49]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken:
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS 2022: 6 - [c48]Ping-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf:
Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. IRPS 2022: 9 - [c47]Kateryna Serbulova, S.-H. Chen, Geert Hellings, Anabela Veloso, Anne Jourdain, Dimitri Linten, J. De Boeck, Guido Groeseneken, Julien Ryckaert, Geert Van der Plas, Eric Beyne, Eugenio Dentoni Litta, Naoto Horiguchi:
Enabling Active Backside Technology for ESD and LU Reliability in DTCO/STCO. VLSI Technology and Circuits 2022: 431-432 - 2021
- [c46]K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt:
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW 2021: 1-4 - [c45]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken:
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS 2021: 1-7 - [c44]Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer:
Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS 2021: 1-6 - 2020
- [c43]Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer:
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS 2020: 1-7
2010 – 2019
- 2019
- [c42]Yashwanth Balaji, Quentin Smets, Dennis Lin, I. Asselberghs, Iuliana P. Radu, Guido Groeseneken:
Tunnel FETs using Phosphorene/ReS2 heterostructures. DRC 2019: 113-114 - [c41]Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Bart Sorée, Guido Groeseneken:
Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices. DRC 2019: 253-254 - [c40]Shuzhen You, Xiangdong Li, Stefaan Decoutere, Guido Groeseneken, Zhanfei Chen, Jun Liu, Yuki Yamashita, Kazutoshi Kobayashi:
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. ESSDERC 2019: 158-161 - [c39]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken:
Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS 2019: 1-7 - [c38]Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS 2019: 1-7 - 2018
- [j39]Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede:
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. 2018(1): 98-117 (2018) - [c37]Jasper Bizindavyi, Anne S. Verhulst, Bart Soree, Guido Groeseneken:
Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs. DRC 2018: 1-2 - [c36]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede:
A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS 2018: 2-1 - [c35]Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken:
Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS 2018: 5 - [c34]Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Popovici, Guido Groeseneken, Jan Van Houdt:
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS 2018: 6 - 2017
- [j38]Francky Catthoor, Guido Groeseneken:
Will Chips of the Future Learn How to Feel Pain and Cure Themselves? IEEE Des. Test 34(5): 80-87 (2017) - [c33]Yashwanth Balaji, Quentin Smets, Cesar J. Lockhart de la Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana P. Radu, Dan Mocuta, Guido Groeseneken:
Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures. ESSDERC 2017: 106-109 - [c32]Karine Florent, Simone Lavizzari, Luca Di Piazza, Mihaela Popovici, Goedele Potoms, Tom Raymaekers, Guido Groeseneken, Jan Van Houdt:
From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration. ESSDERC 2017: 164-167 - [c31]Nian Wang, Shih-Hung Chen, Geert Hellings, Kris Myny, Soeren Steudel, Mirko Scholz, Roman Boschke, Dimitri Linten, Guido Groeseneken:
ESD characterisation of a-IGZO TFTs on Si and foil substrates. ESSDERC 2017: 276-279 - 2016
- [c30]Devin Verreck, Anne S. Verhulst, Bart Soree, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken:
Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors. ESSDERC 2016: 412-415 - 2015
- [j37]Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems 39(8): 1039-1051 (2015) - [c29]Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marko Simicic, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken:
Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC 2015: 1-8 - [c28]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser:
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC 2015: 218-225 - [c27]C. Y. Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve, Augusto Redolfi, Guido Groeseneken, Malgorzata Jurczak:
Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. ESSDERC 2015: 262-265 - [c26]Roman Boschke, Guido Groeseneken, Mirko Scholz, Shih-Hung Chen, Geert Hellings, Peter Verheyen, Dimitri Linten:
ESD protection diodes in optical interposer technology. ICICDT 2015: 1-4 - [c25]Pieter Weckx, Ben Kaczer, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken:
Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology. ICICDT 2015: 1-4 - [c24]Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken:
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS 2015: 2 - [c23]Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Yves Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken:
ESD characterization of planar InGaAs devices. IRPS 2015: 3 - [c22]Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean:
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS 2015: 3 - [c21]Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, K. Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken:
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. IRPS 2015: 3 - [c20]Simon Van Beek, Koen Martens, Philippe Roussel, Gabriele Luca Donadio, Johan Swerts, Sofie Mertens, Gouri Sankar Kar, Tai Min, Guido Groeseneken:
Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. IRPS 2015: 4 - [c19]Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer:
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS 2015: 5 - [c18]Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs:
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS 2015: 6 - 2014
- [j36]Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken:
Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. Microelectron. Reliab. 54(4): 746-754 (2014) - [j35]Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere:
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54(9-10): 2196-2199 (2014) - [j34]Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere:
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. 54(9-10): 2232-2236 (2014) - [j33]Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken:
Energy distribution of positive charges in high-k dielectric. Microelectron. Reliab. 54(9-10): 2329-2333 (2014) - [j32]Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth, Tibor Grasser, Guido Groeseneken:
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Trans. Very Large Scale Integr. Syst. 22(2): 280-285 (2014) - [c17]Halil Kukner, Pieter Weckx, Sebastien Morrison, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes. DSD 2014: 98-107 - [c16]Ajay Bhoolokam, Manoj Nag, Adrian Vaisman Chasin, Soeren Steudel, Jan Genoe, Gerwin H. Gelinck, Guido Groeseneken, Paul Heremans:
Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors. ESSDERC 2014: 302-304 - [c15]Halil Kukner, Moustafa A. Khatib, Sebastien Morrison, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology. ISQED 2014: 473-479 - 2013
- [j31]Halil Kükner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model. Microprocess. Microsystems 37(8-A): 792-800 (2013) - [c14]Geert Hellings, Shih-Hung Chen, Dimitri Linten, Mirko Scholz, Guido Groeseneken:
Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies. CICC 2013: 1-4 - [c13]Said Hamdioui, Michael Nicolaidis, Dimitris Gizopoulos, Arnaud Grasset, Guido Groeseneken, Philippe Bonnot:
Reliability challenges of real-time systems in forthcoming technology nodes. DATE 2013: 129-134 - [c12]Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh:
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC 2013: 190-193 - 2012
- [j30]Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken:
Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. 52(9-10): 1883-1890 (2012) - [j29]Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken:
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. 52(9-10): 1932-1935 (2012) - [j28]Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Mitsuhiro Togo, N. Horiguchi, Guido Groeseneken:
Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements. IEEE Trans. Circuits Syst. II Express Briefs 59-II(7): 439-442 (2012) - [j27]Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann:
Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. 20(8): 1487-1495 (2012) - [c11]Halil Kukner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model. DSD 2012: 1-7 - [c10]Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan:
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. ESSDERC 2012: 242-245 - [c9]Leqi Zhang, Stefan Cosemans, Dirk J. Wouters, Guido Groeseneken, Malgorzata Jurczak:
Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write. ESSDERC 2012: 282-285 - [c8]Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, Mitsuhiro Togo, N. Horiguchi, Jérôme Mitard, Aaron Thean, Guido Groeseneken, Cor Claeys, Felice Crupi:
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. ESSDERC 2012: 330-333 - [c7]Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken:
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT 2012: 1-4 - 2011
- [j26]P. C. Feijoo, Moonju Cho, Mitsuhiro Togo, E. San Andrés, Guido Groeseneken:
Positive bias temperature instabilities on sub-nanometer EOT FinFETs. Microelectron. Reliab. 51(9-11): 1521-1524 (2011) - [c6]Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann:
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. ISCAS 2011: 2249-2252 - 2010
- [j25]Sandeep Sangameswaran, Jeroen De Coster, Guido Groeseneken, Ingrid De Wolf:
Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors. Microelectron. Reliab. 50(9-11): 1383-1387 (2010) - [c5]Vaidyanathan Subramanian, Abdelkarim Mercha, Bertrand Parvais, Morin Dehan, Guido Groeseneken, Willy M. C. Sansen, Stefaan Decoutere:
Identifying the Bottlenecks to the RF Performance of FinFETs. VLSI Design 2010: 111-116
2000 – 2009
- 2009
- [j24]R. Fernández-García, Ben Kaczer, Guido Groeseneken:
A CMOS circuit for evaluating the NBTI over a wide frequency range. Microelectron. Reliab. 49(8): 885-891 (2009) - [j23]Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken:
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. 49(12): 1440-1446 (2009) - [j22]Mirko Scholz, Dimitri Linten, Steven Thijs, Sandeep Sangameswaran, Masanori Sawada, Toshiyuki Nakaei, Takumi Hasebe, Guido Groeseneken:
ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool? IEEE Trans. Instrum. Meas. 58(10): 3418-3426 (2009) - 2008
- [j21]Guido Groeseneken, Ingrid De Wolf, A. J. Mouthaan, Jaap Bisschop:
Editorial. Microelectron. Reliab. 48(8-9): 1111 (2008) - [c4]Steven Thijs, Mototsugu Okushima, Jonathan Borremans, Philippe Jansen, Dimitri Linten, Mirko Scholz, Piet Wambacq, Guido Groeseneken:
Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications. CICC 2008: 49-52 - [c3]Georges G. E. Gielen, Pieter De Wit, Elie Maricau, Johan Loeckx, Javier Martín-Martínez, Ben Kaczer, Guido Groeseneken, Rosana Rodríguez, Montserrat Nafría:
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. DATE 2008: 1322-1327 - 2007
- [j20]A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, Herman E. Maes, Guido Groeseneken, J. A. Kittl:
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. Microelectron. Reliab. 47(4-5): 505-507 (2007) - [j19]A. Kerber, Luigi Pantisano, Anabela Veloso, Guido Groeseneken, Martin Kerber:
Reliability screening of high-k dielectrics based on voltage ramp stress. Microelectron. Reliab. 47(4-5): 513-517 (2007) - [j18]Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken:
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. 47(4-5): 559-566 (2007) - [j17]M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns:
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. Microelectron. Reliab. 47(6): 880-889 (2007) - [j16]David Trémouilles, Steven Thijs, Philippe Roussel, M. I. Natarajan, Vesselin K. Vassilev, Guido Groeseneken:
Transient voltage overshoot in TLP testing - Real or artifact? Microelectron. Reliab. 47(7): 1016-1024 (2007) - [c2]Bertrand Parvais, Vaidyanathan Subramanian, Abdelkarim Mercha, Morin Dehan, Piet Wambacq, Willy Sansen, Guido Groeseneken, Stefaan Decoutere:
FinFET technology for analog and RF circuits. ICECS 2007: 182-185 - 2006
- [j15]Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken:
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. 46(5-6): 702-712 (2006) - [j14]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken:
FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectron. Reliab. 46(9-11): 1608-1611 (2006) - 2005
- [j13]Vesselin K. Vassilev, Steven Thijs, P. L. Segura, Piet Wambacq, Paul Leroux, Guido Groeseneken, M. I. Natarajan, Herman E. Maes, Michiel Steyaert:
ESD-RF co-design methodology for the state of the art RF-CMOS blocks. Microelectron. Reliab. 45(2): 255-268 (2005) - [j12]Yunlong Li, Zsolt Tökei, Philippe Roussel, Guido Groeseneken, Karen Maex:
Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability. Microelectron. Reliab. 45(9-11): 1299-1304 (2005) - [j11]Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, Guido Groeseneken, Marcel ter Beek:
ESD circuit model based protection network optimisation for extended-voltage NMOS drivers. Microelectron. Reliab. 45(9-11): 1430-1435 (2005) - [c1]Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken:
RF ESD protection strategies - the design and performance trade-off challenges. CICC 2005: 489-496 - 2004
- [j10]Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot:
Evidence for source side injection hot carrier effects on lateral DMOS transistors. Microelectron. Reliab. 44(9-11): 1621-1624 (2004) - [j9]Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, B.-J. Choi, Ann Concannon, J.-J. Yang, Guido Groeseneken, M. I. Natarajan, Marcel ter Beek, Peter Hopper, Michiel Steyaert, Herman E. Maes:
A CAD assisted design and optimisation methodology for over-voltage ESD protection circuits. Microelectron. Reliab. 44(9-11): 1885-1890 (2004) - 2003
- [j8]Vesselin K. Vassilev, Snezana Jenei, Guido Groeseneken, Rafael Venegas, Steven Thijs, Vincent De Heyn, M. Natarajan Iyer, Michiel Steyaert, Herman E. Maes:
High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices. Microelectron. Reliab. 43(7): 1011-1020 (2003) - 2002
- [j7]Ben Kaczer, Robin Degraeve, Mahmoud Rasras, An De Keersgieter, K. Van de Mieroop, Guido Groeseneken:
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. Microelectron. Reliab. 42(4-5): 555-564 (2002) - [j6]Bart Keppens, Vincent De Heyn, M. Natarajan Iyer, Vesselin K. Vassilev, Guido Groeseneken:
Significance of the failure criterion on transmission line pulse testing. Microelectron. Reliab. 42(6): 901-907 (2002) - [j5]E. Andries, R. Dreesen, Kris Croes, Ward De Ceuninck, Luc De Schepper, Guido Groeseneken, K. F. Lo, Marc D'Olieslaeger, Jan D'Haen:
Statistical aspects of the degradation of LDD nMOSFETs. Microelectron. Reliab. 42(9-11): 1409-1413 (2002) - 2001
- [j4]Karlheinz Bock, Bart Keppens, Vincent De Heyn, Guido Groeseneken, L. Y. Ching, A. Naem:
Influence of gate length on ESD-performance for deep submicron CMOS technology. Microelectron. Reliab. 41(3): 375-383 (2001) - [j3]R. Dreesen, Kris Croes, Jean Manca, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken:
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation. Microelectron. Reliab. 41(3): 437-443 (2001)
1990 – 1999
- 1999
- [j2]Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke:
Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. 43(3): 339-350 (1999) - 1998
- [j1]Donato Montanari, Jan Van Houdt, Guido Groeseneken, Herman E. Maes:
Novel level-identifying circuit for flash multilevel memories. IEEE J. Solid State Circuits 33(7): 1090-1095 (1998)
Coauthor Index