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Guido Groeseneken
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- affiliation: Catholic University of Leuven, Belgium
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2020 – today
- 2023
- [c51]Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
:
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS 2023: 1-10 - [c50]W.-C. Chen, S.-H. Chen, Anabela Veloso, Kateryna Serbulova, Geert Hellings, Guido Groeseneken:
Upcoming Challenges of ESD Reliability in DTCO with BS-PDN Routing via BPRs. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c49]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
:
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS 2022: 6 - [c48]Ping-Yi Hsieh, Artemisia Tsiara
, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken
, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf:
Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. IRPS 2022: 9 - [c47]Kateryna Serbulova, S.-H. Chen, Geert Hellings, Anabela Veloso, Anne Jourdain, Dimitri Linten, J. De Boeck, Guido Groeseneken, Julien Ryckaert, Geert Van der Plas, Eric Beyne, Eugenio Dentoni Litta, Naoto Horiguchi:
Enabling Active Backside Technology for ESD and LU Reliability in DTCO/STCO. VLSI Technology and Circuits 2022: 431-432 - 2021
- [c46]K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais
, Guido Groeseneken
, Jan Van Houdt:
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW 2021: 1-4 - [c45]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
:
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS 2021: 1-7 - [c44]Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken
, Dimitri Linten, Ben Kaczer:
Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS 2021: 1-6 - 2020
- [c43]Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken
, Ben Kaczer:
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS 2020: 1-7
2010 – 2019
- 2019
- [c42]Yashwanth Balaji
, Quentin Smets, Dennis Lin, I. Asselberghs
, Iuliana P. Radu
, Guido Groeseneken:
Tunnel FETs using Phosphorene/ReS2 heterostructures. DRC 2019: 113-114 - [c41]Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Bart Sorée, Guido Groeseneken:
Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices. DRC 2019: 253-254 - [c40]Shuzhen You, Xiangdong Li, Stefaan Decoutere, Guido Groeseneken
, Zhanfei Chen, Jun Liu, Yuki Yamashita, Kazutoshi Kobayashi:
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. ESSDERC 2019: 158-161 - [c39]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
:
Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS 2019: 1-7 - [c38]Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken
, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS 2019: 1-7 - 2018
- [j39]Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken
, Dimitri Linten, Ingrid Verbauwhede
:
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. 2018(1): 98-117 (2018) - [c37]Jasper Bizindavyi, Anne S. Verhulst, Bart Soree
, Guido Groeseneken
:
Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs. DRC 2018: 1-2 - [c36]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken
, Dimitri Linten, Ingrid Verbauwhede
:
A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS 2018: 2-1 - [c35]Vamsi Putcha, Jacopo Franco, Abhitosh Vais
, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken
:
Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS 2018: 5 - [c34]Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano
, Ben Kaczer, Luca Di Piazza, Mihaela Popovici, Guido Groeseneken
, Jan Van Houdt:
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS 2018: 6 - 2017
- [j38]Francky Catthoor
, Guido Groeseneken
:
Will Chips of the Future Learn How to Feel Pain and Cure Themselves? IEEE Des. Test 34(5): 80-87 (2017) - [c33]Yashwanth Balaji
, Quentin Smets, Cesar J. Lockhart de la Rosa, Anh Khoa Augustin Lu
, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana P. Radu
, Dan Mocuta, Guido Groeseneken
:
Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures. ESSDERC 2017: 106-109 - [c32]Karine Florent, Simone Lavizzari, Luca Di Piazza, Mihaela Popovici, Goedele Potoms, Tom Raymaekers, Guido Groeseneken
, Jan Van Houdt:
From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration. ESSDERC 2017: 164-167 - [c31]Nian Wang, Shih-Hung Chen, Geert Hellings, Kris Myny
, Soeren Steudel
, Mirko Scholz, Roman Boschke, Dimitri Linten, Guido Groeseneken
:
ESD characterisation of a-IGZO TFTs on Si and foil substrates. ESSDERC 2017: 276-279 - 2016
- [c30]Devin Verreck, Anne S. Verhulst, Bart Soree
, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken
:
Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors. ESSDERC 2016: 412-415 - 2015
- [j37]Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre
, Rudy Lauwereins, Guido Groeseneken
:
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems 39(8): 1039-1051 (2015) - [c29]Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marko Simicic
, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken
:
Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC 2015: 1-8 - [c28]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken
, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
:
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC 2015: 218-225 - [c27]C. Y. Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve, Augusto Redolfi, Guido Groeseneken
, Malgorzata Jurczak:
Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. ESSDERC 2015: 262-265 - [c26]Roman Boschke, Guido Groeseneken
, Mirko Scholz, Shih-Hung Chen, Geert Hellings, Peter Verheyen, Dimitri Linten:
ESD protection diodes in optical interposer technology. ICICDT 2015: 1-4 - [c25]Pieter Weckx, Ben Kaczer, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
:
Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology. ICICDT 2015: 1-4 - [c24]Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser
, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
:
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS 2015: 2 - [c23]Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Yves Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang
, Weidong Zhang
, Nadine Collaert, Guido Groeseneken
:
ESD characterization of planar InGaAs devices. IRPS 2015: 3 - [c22]Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser
, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman
, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken
, Aaron Thean:
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS 2015: 3 - [c21]Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, K. Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
:
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. IRPS 2015: 3 - [c20]Simon Van Beek, Koen Martens, Philippe Roussel, Gabriele Luca Donadio, Johan Swerts, Sofie Mertens, Gouri Sankar Kar, Tai Min, Guido Groeseneken
:
Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. IRPS 2015: 4 - [c19]Abhitosh Vais
, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken
, Kristin De Meyer:
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS 2015: 5 - [c18]Tian-Li Wu
, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels
, Guido Groeseneken
, Stefaan Decoutere, Robin Roelofs:
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS 2015: 6 - 2014
- [j36]Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken
:
Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. Microelectron. Reliab. 54(4): 746-754 (2014) - [j35]Jie Hu, Steve Stoffels
, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot
, Guido Groeseneken
, Stefaan Decoutere:
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54(9-10): 2196-2199 (2014) - [j34]Tian-Li Wu
, Denis Marcon, Steve Stoffels
, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken
, Stefaan Decoutere:
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. 54(9-10): 2232-2236 (2014) - [j33]Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang
, Weidong Zhang
, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken
:
Energy distribution of positive charges in high-k dielectric. Microelectron. Reliab. 54(9-10): 2329-2333 (2014) - [j32]Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth
, Tibor Grasser
, Guido Groeseneken
:
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Trans. Very Large Scale Integr. Syst. 22(2): 280-285 (2014) - [c17]Halil Kukner, Pieter Weckx, Sebastien Morrison, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre
, Rudy Lauwereins, Guido Groeseneken
:
NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes. DSD 2014: 98-107 - [c16]Ajay Bhoolokam, Manoj Nag, Adrian Vaisman Chasin, Soeren Steudel
, Jan Genoe
, Gerwin H. Gelinck, Guido Groeseneken
, Paul Heremans:
Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors. ESSDERC 2014: 302-304 - [c15]Halil Kukner, Moustafa A. Khatib
, Sebastien Morrison, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre
, Rudy Lauwereins, Guido Groeseneken
:
Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology. ISQED 2014: 473-479 - 2013
- [j31]Halil Kükner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre
, Rudy Lauwereins, Guido Groeseneken
:
Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model. Microprocess. Microsystems 37(8-A): 792-800 (2013) - [c14]Geert Hellings, Shih-Hung Chen, Dimitri Linten, Mirko Scholz, Guido Groeseneken
:
Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies. CICC 2013: 1-4 - [c13]Said Hamdioui, Michael Nicolaidis, Dimitris Gizopoulos, Arnaud Grasset, Guido Groeseneken, Philippe Bonnot:
Reliability challenges of real-time systems in forthcoming technology nodes. DATE 2013: 129-134 - [c12]Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken
, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh:
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC 2013: 190-193 - 2012
- [j30]Maria Toledano-Luque, Ben Kaczer, Jacopo Franco
, Philippe Roussel, Tibor Grasser
, Guido Groeseneken
:
Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. 52(9-10): 1883-1890 (2012) - [j29]Jacopo Franco
, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser
, Guido Groeseneken
:
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. 52(9-10): 1932-1935 (2012) - [j28]Felice Crupi, Massimo Alioto, Jacopo Franco
, Paolo Magnone
, Mitsuhiro Togo
, N. Horiguchi, Guido Groeseneken
:
Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements. IEEE Trans. Circuits Syst. II Express Briefs 59-II(7): 439-442 (2012) - [j27]Felice Crupi, Massimo Alioto, Jacopo Franco
, Paolo Magnone
, Ben Kaczer, Guido Groeseneken
, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann:
Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. 20(8): 1487-1495 (2012) - [c11]Halil Kukner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre
, Rudy Lauwereins, Guido Groeseneken
:
Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model. DSD 2012: 1-7 - [c10]Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken
, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan:
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. ESSDERC 2012: 242-245 - [c9]Leqi Zhang, Stefan Cosemans, Dirk J. Wouters, Guido Groeseneken
, Malgorzata Jurczak:
Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write. ESSDERC 2012: 282-285 - [c8]Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, Mitsuhiro Togo
, N. Horiguchi, Jérôme Mitard, Aaron Thean, Guido Groeseneken
, Cor Claeys, Felice Crupi:
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. ESSDERC 2012: 330-333 - [c7]Jacopo Franco
, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
:
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT 2012: 1-4 - 2011
- [j26]P. C. Feijoo, Moonju Cho, Mitsuhiro Togo
, E. San Andrés, Guido Groeseneken
:
Positive bias temperature instabilities on sub-nanometer EOT FinFETs. Microelectron. Reliab. 51(9-11): 1521-1524 (2011) - [c6]Felice Crupi, Massimo Alioto, Jacopo Franco
, Paolo Magnone
, Ben Kaczer, Guido Groeseneken
, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann:
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. ISCAS 2011: 2249-2252 - 2010
- [j25]Sandeep Sangameswaran, Jeroen De Coster, Guido Groeseneken
, Ingrid De Wolf:
Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors. Microelectron. Reliab. 50(9-11): 1383-1387 (2010) - [c5]Vaidyanathan Subramanian, Abdelkarim Mercha, Bertrand Parvais, Morin Dehan, Guido Groeseneken
, Willy M. C. Sansen, Stefaan Decoutere:
Identifying the Bottlenecks to the RF Performance of FinFETs. VLSI Design 2010: 111-116
2000 – 2009
- 2009
- [j24]R. Fernández-García, Ben Kaczer, Guido Groeseneken
:
A CMOS circuit for evaluating the NBTI over a wide frequency range. Microelectron. Reliab. 49(8): 885-891 (2009) - [j23]Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles
, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken
:
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. 49(12): 1440-1446 (2009) - [j22]Mirko Scholz, Dimitri Linten, Steven Thijs, Sandeep Sangameswaran, Masanori Sawada, Toshiyuki Nakaei, Takumi Hasebe, Guido Groeseneken
:
ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool? IEEE Trans. Instrum. Meas. 58(10): 3418-3426 (2009) - 2008
- [j21]Guido Groeseneken
, Ingrid De Wolf, A. J. Mouthaan, Jaap Bisschop:
Editorial. Microelectron. Reliab. 48(8-9): 1111 (2008) - [c4]Steven Thijs, Mototsugu Okushima, Jonathan Borremans, Philippe Jansen, Dimitri Linten, Mirko Scholz, Piet Wambacq, Guido Groeseneken
:
Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications. CICC 2008: 49-52 - [c3]Georges G. E. Gielen, Pieter De Wit, Elie Maricau, Johan Loeckx, Javier Martín-Martínez, Ben Kaczer, Guido Groeseneken
, Rosana Rodríguez, Montserrat Nafría
:
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. DATE 2008: 1322-1327 - 2007
- [j20]A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, Herman E. Maes, Guido Groeseneken
, J. A. Kittl:
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. Microelectron. Reliab. 47(4-5): 505-507 (2007) - [j19]A. Kerber, Luigi Pantisano, Anabela Veloso, Guido Groeseneken
, Martin Kerber:
Reliability screening of high-k dielectrics based on voltage ramp stress. Microelectron. Reliab. 47(4-5): 513-517 (2007) - [j18]Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken
:
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. 47(4-5): 559-566 (2007) - [j17]M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken
, Marc M. Heyns:
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. Microelectron. Reliab. 47(6): 880-889 (2007) - [j16]David Trémouilles
, Steven Thijs, Philippe Roussel, M. I. Natarajan, Vesselin K. Vassilev, Guido Groeseneken
:
Transient voltage overshoot in TLP testing - Real or artifact? Microelectron. Reliab. 47(7): 1016-1024 (2007) - [c2]Bertrand Parvais
, Vaidyanathan Subramanian, Abdelkarim Mercha, Morin Dehan, Piet Wambacq, Willy Sansen, Guido Groeseneken
, Stefaan Decoutere:
FinFET technology for analog and RF circuits. ICECS 2007: 182-185 - 2006
- [j15]Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri
, T. Daenen, Robin Degraeve, Andries J. Scholten
, Stefaan Decoutere, Guido Groeseneken
:
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. 46(5-6): 702-712 (2006) - [j14]Raul Fernández, Rosana Rodríguez, Montserrat Nafría
, Xavier Aymerich
, Ben Kaczer, Guido Groeseneken
:
FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectron. Reliab. 46(9-11): 1608-1611 (2006) - 2005
- [j13]Vesselin K. Vassilev, Steven Thijs, P. L. Segura, Piet Wambacq, Paul Leroux
, Guido Groeseneken
, M. I. Natarajan, Herman E. Maes, Michiel Steyaert
:
ESD-RF co-design methodology for the state of the art RF-CMOS blocks. Microelectron. Reliab. 45(2): 255-268 (2005) - [j12]Yunlong Li, Zsolt Tökei, Philippe Roussel, Guido Groeseneken
, Karen Maex:
Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability. Microelectron. Reliab. 45(9-11): 1299-1304 (2005) - [j11]Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, Guido Groeseneken
, Marcel ter Beek:
ESD circuit model based protection network optimisation for extended-voltage NMOS drivers. Microelectron. Reliab. 45(9-11): 1430-1435 (2005) - [c1]Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles
, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken
:
RF ESD protection strategies - the design and performance trade-off challenges. CICC 2005: 489-496 - 2004
- [j10]Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken
, Peter Moens, Jean Manca
, D. Wojciechowski, P. Gassot:
Evidence for source side injection hot carrier effects on lateral DMOS transistors. Microelectron. Reliab. 44(9-11): 1621-1624 (2004) - [j9]Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, B.-J. Choi, Ann Concannon, J.-J. Yang, Guido Groeseneken
, M. I. Natarajan, Marcel ter Beek, Peter Hopper, Michiel Steyaert
, Herman E. Maes:
A CAD assisted design and optimisation methodology for over-voltage ESD protection circuits. Microelectron. Reliab. 44(9-11): 1885-1890 (2004) - 2003
- [j8]Vesselin K. Vassilev, Snezana Jenei, Guido Groeseneken
, Rafael Venegas, Steven Thijs, Vincent De Heyn, M. Natarajan Iyer, Michiel Steyaert
, Herman E. Maes:
High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices. Microelectron. Reliab. 43(7): 1011-1020 (2003) - 2002
- [j7]Ben Kaczer, Robin Degraeve, Mahmoud Rasras
, An De Keersgieter, K. Van de Mieroop, Guido Groeseneken
:
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. Microelectron. Reliab. 42(4-5): 555-564 (2002) - [j6]Bart Keppens, Vincent De Heyn, M. Natarajan Iyer, Vesselin K. Vassilev, Guido Groeseneken
:
Significance of the failure criterion on transmission line pulse testing. Microelectron. Reliab. 42(6): 901-907 (2002) - [j5]E. Andries, R. Dreesen, Kris Croes, Ward De Ceuninck, Luc De Schepper, Guido Groeseneken
, K. F. Lo, Marc D'Olieslaeger
, Jan D'Haen:
Statistical aspects of the degradation of LDD nMOSFETs. Microelectron. Reliab. 42(9-11): 1409-1413 (2002) - 2001
- [j4]Karlheinz Bock, Bart Keppens, Vincent De Heyn, Guido Groeseneken
, L. Y. Ching, A. Naem:
Influence of gate length on ESD-performance for deep submicron CMOS technology. Microelectron. Reliab. 41(3): 375-383 (2001) - [j3]R. Dreesen, Kris Croes, Jean Manca
, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken
:
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation. Microelectron. Reliab. 41(3): 437-443 (2001)
1990 – 1999
- 1999
- [j2]Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken
, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers
, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke:
Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. 43(3): 339-350 (1999) - 1998
- [j1]Donato Montanari, Jan Van Houdt, Guido Groeseneken
, Herman E. Maes:
Novel level-identifying circuit for flash multilevel memories. IEEE J. Solid State Circuits 33(7): 1090-1095 (1998)