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"NBTI reliability on high-k metal-gate SiGe transistor and circuit ..."

Jiann-Shiun Yuan et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.12.015

access: closed

type: Journal Article

metadata version: 2020-02-22

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Jiann-Shiun Yuan, Wen-Kuan Yeh, Shuyu Chen, Chia-Wei Hsu:
NBTI reliability on high-k metal-gate SiGe transistor and circuit performances. Microelectron. Reliab. 51(5): 914-918 (2011)

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