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2010 – 2019
- 2018
[j14]Eun-Jung Yoon, Jong-Tae Park, Chong-Gun Yu
:
Thermal energy harvesting circuit with maximum power point tracking control for self-powered sensor node applications. Frontiers Inf. Technol. Electron. Eng. 19(2): 285-296 (2018)- 2016
- [j13]Jin Hyung Choi, Chong-Gun Yu, Jong Tae Park:
Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory. Microelectron. Reliab. 64: 215-219 (2016) - [j12]Hyun Jun Jang, Chong-Gun Yu, Jong Tae Park:
Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors. Microelectron. Reliab. 64: 570-574 (2016) - 2015
- [j11]Jae Hoon Lee, Jin-Woo Han, Chong-Gun Yu, Jong Tae Park:
Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs. Microelectron. Reliab. 55(9-10): 1456-1459 (2015) - 2014
- [j10]Jin Hyung Choi, Jin-Woo Han, Chong-Gun Yu, Jong Tae Park:
Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs. Microelectron. Reliab. 54(9-10): 2325-2328 (2014) - 2013
- [j9]Hyun Jun Jang, Seung Min Lee, Chong-Gun Yu, Jong Tae Park:
A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors. Microelectron. Reliab. 53(9-11): 1814-1817 (2013) - 2012
- [j8]Seung-Min Lee, Chong-Gun Yu, Seung Min Jeong, Won-Ju Cho, Jong Tae Park:
Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs. Microelectron. Reliab. 52(9-10): 1945-1948 (2012) - 2011
- [j7]Jin-Young Kim, Chong-Gun Yu, Jong Tae Park:
Effects of device layout on the drain breakdown voltages in MuGFETs. Microelectron. Reliab. 51(9-11): 1547-1550 (2011)
2000 – 2009
- 2009
- [j6]Yong Woo Jeon, Dae Hyun Ka, Chong-Gun Yu, Won-Ju Cho, M. Saif Islam, Jong Tae Park:
NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer. Microelectron. Reliab. 49(9-11): 994-997 (2009) - 2007
- [j5]Sung Jun Jang, Dae Hyun Ka, Chong-Gun Yu, Kwan-Su Kim, Won-Ju Cho, Jong Tae Park:
Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs. Microelectron. Reliab. 47(9-11): 1411-1415 (2007) - 2006
- [j4]In Kyung Lee, Se Re Na Yun, Kyosun Kim, Chong-Gun Yu, Jong Tae Park:
New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors. Microelectron. Reliab. 46(9-11): 1864-1867 (2006) - 2004
- [j3]Se Re Na Yun, Chong-Gun Yu, Seok Hee Jeon, Chungkyue Kim, Jong Tae Park, Jean-Pierre Colinge:
Reduced Hot Carrier Effects in Self-Aligned Ground-Plane FDSOI MOSFET's. Microelectron. Reliab. 44(9-11): 1649-1654 (2004) - 2003
- [j2]Jong Tae Park, Nag Jong Choi, Chong-Gun Yu, Seok Hee Jeon, Jean-Pierre Colinge:
Increased hot carrier effects in Gate-All-Around SOI nMOSFET's. Microelectron. Reliab. 43(9-11): 1427-1432 (2003)
1990 – 1999
- 1994
- [j1]Chong-Gun Yu, Randall L. Geiger:
An automatic offset compensation scheme with ping-pong control for CMOS operational amplifiers. IEEE J. Solid State Circuits 29(5): 601-610 (1994) - [c2]Chong-Gun Yu, Randall L. Geiger:
An Accurate and Matching-Free Threshold Voltage Extraction Scheme for MOS Transistors. ISCAS 1994: 115-118 - 1993
- [c1]Chong-Gun Yu, Randall L. Geiger:
Very Low Voltage Operational Amplifiers Using Floating Gate MOS Transistor. ISCAS 1993: 1152-1155
Coauthor Index
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