Microelectronics Reliability, Volume 47

Volume 47, Number 1, January 2007

Introductory Invited Papers

• 
  Hei Wong, V. Filip, C. K. Wong, P. S. Chung:
  Silicon integrated photonics begins to revolutionize. 1-10
• 
  Viktor Sverdlov, Hans Kosina, Siegfried Selberherr:
  Modeling current transport in ultra-scaled field-effect transistors. 11-19
• 
  Takeo Hattori, Hiroshi Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi:
  Angle-resolved photoelectron spectroscopy on gate insulators. 20-26
• 
  Ming-Dou Ker, Wei-Jen Chang:
  Overview on ESD protection design for mixed-voltage I/O interfaces with high-voltage-tolerant power-rail ESD clamp circuits in low-voltage thin-oxide CMOS technology. 27-35

Research Papers

• 
  Sergey Shaimeev, Vladimir Gritsenko, Kaupo Kukli, Hei Wong, Eun-Hong Lee, Chungwoo Kim:
  Single band electronic conduction in hafnium oxide prepared by atomic layer deposition. 36-40
• 
  Cédric Leyris, F. Martinez, Alain Hoffmann, M. Valenza, J. C. Vildeuil:
  N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis. 41-45
• 
  Y. Fu, Hei Wong, Juin J. Liou:
  Characterization and modeling of flicker noise in junction field-effect transistor with source and drain trench isolation. 46-50
• 
  Milan Jevtic, Jovan M. Hadzi-Vukovic:
  Study of the electrical cycling stressed large area Schottky diodes using I-V and noise measurements. 51-58
• 
  Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon:
  Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. 59-64
• 
  Giovanna Sozzi, Roberto Menozzi:
  A review of the use of electro-thermal simulations for the analysis of heterostructure FETs. 65-73
• 
  Hirotaka Komoda, Chie Moritani, Kazutaka Takahashi, Heiji Watanabe, Kiyoshi Yasutake:
  Sample tilting technique for preventing electrostatic discharge during high-current FIB gas-assisted etching with XeF₂. 74-81
• 
  Hongfei Liu, Alin Hou, Hongbo Zhang, Daming Zhang, Maobin Yi:
  A voltage calibration technique of electro-optic probing for characterization internal to IC's chip. 82-87
• 
  Yuki Fukuda, Michael D. Osterman, Michael G. Pecht:
  The impact of electrical current, mechanical bending, and thermal annealing on tin whisker growth. 88-92
• 
  Joe Varghese, Abhijit Dasgupta:
  Test methodology for durability estimation of surface mount interconnects under drop testing conditions. 93-103
• 
  Yi-Shao Lai, Tong Hong Wang:
  Optimal design towards enhancement of board-level thermomechanical reliability of wafer-level chip-scale packages. 104-110
• 
  Yi-Shao Lai, Tong Hong Wang, Han-Hui Tsai, Ming-Hwa R. Jen:
  Cyclic bending reliability of wafer-level chip-scale packages. 111-117
• 
  J. G. Lee, K. N. Subramanian:
  Effects of TMF heating rates on damage accumulation and resultant mechanical behavior of Sn-Ag based solder joints. 118-131
• 
  Stoyan Stoyanov, Robert W. Kay, Chris Bailey, Marc P. Y. Desmulliez:
  Computational modelling for reliable flip-chip packaging at sub-100mum pitch using isotropic conductive adhesives. 132-141
• 
  Reza Asgary, Karim Mohammadi, Mark Zwolinski:
  Using neural networks as a fault detection mechanism in MEMS devices. 142-149

Reseach Note

• 
  Miro Milanovic, Mitja Truntic, Primoz Slibar, Drago Dolinar:
  Reconfigurable digital controller for a buck converter based on FPGA. 150-154

Book reviews

• 
  Milorad Tosic:
  S.V. Nagaraj, Web Caching and its Applications, Kluwer Academic Publishers, Boston/Dordrecht/London, (The Kluwer International Series in Engineering and Computer Science, Vol 772), Hardcover (May 1, 2004), $105.00, pp 236, ISBN 1-4020-8049-2. 155-156
• 
  Mile K. Stojcev:
  Arithmetic and Logic in Computer Systems, Mi Lu. John Wiley & Sons, Inc., Hoboken, NJ (2004), ISBN: 0-471-46945-9. 157-158

Volume 47, Numbers 2-3, February-March 2007

EuroSimE Special Section

• 
  Artur Wymyslowski, Bart Vandevelde, Dag Andersson:
  Thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 159-160
• 
  Florian Cacho, S. Orain, G. Cailletaud, H. Jaouen:
  A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies. 161-167
• 
  Stephan Schoenfelder, Matthias Ebert, Christof Landesberger, Karlheinz Bock, Jörg Bagdahn:
  Investigations of the influence of dicing techniques on the strength properties of thin silicon. 168-178
• 
  M. A. J. van Gils, Olaf van der Sluis, G. Q. Zhang, J. H. J. Janssen, R. M. J. Voncken:
  Analysis of Cu/low-k bond pad delamination by using a novel failure index. 179-186
• 
  Mike Roellig, Rainer Dudek, Steffen Wiese, Bjoern Boehme, Bernhard Wunderle, Klaus-Jürgen Wolter, Bernd Michel:
  Fatigue analysis of miniaturized lead-free solder contacts based on a novel test concept. 187-195
• 
  Chang-Chun Lee, Chien-Chen Lee, Hsiao-Tung Ku, Shu-Ming Chang, Kuo-Ning Chiang:
  Solder joints layout design and reliability enhancements of wafer level packaging using response surface methodology. 196-204
• 
  W. D. van Driel, A. Mavinkurve, M. A. J. van Gils, G. Q. Zhang:
  Advanced structural similarity rules for the BGA package family. 205-214
• 
  Nele Van Steenberge, Paresh Limaye, Geert Willems, Bart Vandevelde, Inge Schildermans:
  Analytical and finite element models of the thermal behavior for lead-free soldering processes in electronic assembly. 215-222
• 
  Steffen Wiese, Klaus-Jürgen Wolter:
  Creep of thermally aged SnAgCu-solder joints. 223-232
• 
  Dao-Guo Yang, Kaspar M. B. Jansen, Leo J. Ernst, G. Q. Zhang, H. J. L. Bressers, J. H. J. Janssen:
  Effect of filler concentration of rubbery shear and bulk modulus of molding compounds. 233-239
• 
  C. van't Hof, Kaspar M. B. Jansen, G. Wisse, Leo J. Ernst, Dao-Guo Yang, G. Q. Zhang, H. J. L. Bressers:
  Novel shear tools for viscoelastic characterization of packaging polymers. 240-247
• 
  Viktor Gonda, Kaspar M. B. Jansen, Leo J. Ernst, Jaap M. J. den Toonder, G. Q. Zhang:
  Micro-mechanical testing of SiLK by nanoindentation and substrate curvature techniques. 248-251
• 
  M. Spraul, Wolfgang Nüchter, A. Möller, Bernhard Wunderle, Bernd Michel:
  Reliability of SnPb and Pb-free flip-chips under different test conditions. 252-258
• 
  Bart Vandevelde, Mario Gonzalez, Paresh Limaye, Petar Ratchev, Eric Beyne:
  Thermal cycling reliability of SnAgCu and SnPb solder joints: A comparison for several IC-packages. 259-265
• 
  C. Andersson, D. R. Andersson, Per-Erik Tegehall, Johan Liu:
  Effect of different temperature cycling profiles on the crack initiation and propagation of Sn-3.5Ag wave soldered solder joints. 266-272
• 
  M. A. J. van Gils, W. D. van Driel, G. Q. Zhang, H. J. L. Bressers, Richard B. R. van Silfhout, X. J. Fan, J. H. J. Janssen:
  Virtual qualification of moisture induced failures of advanced packages. 273-279
• 
  Artur Wymyslowski, W. D. van Driel, J. van de Peer, N. Tzannetakis, G. Q. Zhang:
  Advanced numerical prototyping methods in modern engineering applications - Optimisation for micro-electronic package reliability. 280-289
• 
  H. J. L. Bressers, W. D. van Driel, Kaspar M. B. Jansen, Leo J. Ernst, G. Q. Zhang:
  Correlation between chemistry of polymer building blocks and microelectronics reliability. 290-294
• 
  S. Orain, J.-C. Barbé, X. Federspiel, P. Legallo, H. Jaouen:
  FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding. 295-301
• 
  Mats Lindgren, Ilja Belov, Magnus Törnvall, Peter Leisner:
  Application of simulation-based decision making in product development of an RF module. 302-309
• 
  Dao-Guo Yang, Kaspar M. B. Jansen, Leo J. Ernst, G. Q. Zhang, W. D. van Driel, H. J. L. Bressers, J. H. J. Janssen:
  Numerical modeling of warpage induced in QFN array molding process. 310-318
• 
  Kirsten Weide-Zaage, David Dalleau, Yves Danto, Hélène Frémont:
  Dynamic void formation in a DD-copper-structure with different metallization geometry. 319-325

Polytronic 2005 Special Section

• 
  Andrzej Dziedzic, Jan Felba:
  Polytronic 2005. 327
• 
  James E. Morris:
  Isotropic conductive adhesives: Future trends, possibilities and risks. 328-330
• 
  Jana Kolbe, Andreas Arp, Francesco Calderone, Edouard Marc Meyer, Wilhelm Meyer, Helmut Schaefer, Manuela Stuve:
  Inkjettable conductive adhesive for use in microelectronics and microsystems technology. 331-334
• 
  Ryszard Kisiel, Jan Felba, Janusz Borecki, Andrzej Moscicki:
  Problems of PCB microvias filling by conductive paste. 335-341
• 
  Tomasz Falat, Artur Wymyslowski, Jana Kolbe:
  Numerical approach to characterization of thermally conductive adhesives. 342-346
• 
  Péter Gordon, Bálint Balogh, Bálint Sinkovics:
  Thermal simulation of UV laser ablation of polyimide. 347-353
• 
  Andrzej Dziedzic:
  Carbon/polyesterimide thick-film resistive composites - Experimental characterization and theoretical analysis of physicochemical, electrical and stability properties. 354-362
• 
  Marika P. Immonen, Mikko Karppinen, Jorma K. Kivilahti:
  Investigation of environmental reliability of optical polymer waveguides embedded on printed circuit boards. 363-371
• 
  Jacques Tardy, Mohsen Erouel, A. L. Deman, A. Gagnaire, V. Teodorescu, M. G. Blanchin, B. Canut, A. Barau, M. Zaharescu:
  Organic thin film transistors with HfO₂ high-k gate dielectric grown by anodic oxidation or deposited by sol-gel. 372-377

Introductory Invited Paper

• 
  T. K. Chiang:
  A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs. 379-383

Review Paper

• 
  F. Schwierz, C. Schippel:
  Performance trends of Si-based RF transistors. 384-390

Research Papers

• 
  X. Zou, J. P. Xu, C. X. Li, P. T. Lai, W. B. Chen:
  A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer. 391-394
• 
  W. W. (Bill) Abadeer:
  Effect of stress voltages on voltage acceleration and lifetime projections for ultra-thin gate oxides. 395-400
• 
  C. Petit, D. Zander:
  Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxides. 401-408
• 
  Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi:
  Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction. 409-418
• 
  You-Lin Wu, Shi-Tin Lin, Tsung-Min Chang, Juin J. Liou:
  Reliability study of ultrathin oxide films subject to irradiation-then-stress treatment using conductive atomic force microscopy. 419-421
• 
  Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve:
  Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. 422-428
• 
  W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng:
  Evidence that N₂O is a stronger oxidizing agent than O₂ for both Ta₂O₅ and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. 429-433
• 
  Jianyin Zhao, Fang Liu:
  Reliability assessment of the metallized film capacitors from degradation data. 434-436
• 
  Bjorn Vermeersch, Gilbert De Mey:
  Influence of substrate thickness on thermal impedance of microelectronic structures. 437-443
• 
  J. W. C. de Vries, M. Y. Jansen, W. D. van Driel:
  On the difference between thermal cycling and thermal shock testing for board level reliability of soldered interconnections. 444-449
• 
  Jing-en Luan, Tong Yan Tee, Eric Pek, Chwee Teck Lim, Zhaowei Zhong:
  Dynamic responses and solder joint reliability under board level drop test. 450-460
• 
  Hamid R. Zarandi, Seyed Ghassem Miremadi:
  Dependability evaluation of Altera FPGA-based embedded systems subjected to SEUs. 461-470
• 
  Maria Teresa Sanz, Santiago Celma, Belén Calvo:
  Low-distortion 4th order programmable Butterworth filter. 471-476

Volume 47, Numbers 4-5, April - May 2007

Editorial

• 
  Salvatore Lombardo:
  Guest Editorial. 477-478

Introductory invited papers

• 
  Chadwin D. Young, Dawei Heh, Arnost Neugroschel, Rino Choi, Byoung Hun Lee, Gennadi Bersuker:
  Electrical characterization and analysis techniques for the high-kappa era. 479-488
• 
  Gilles Reimbold, J. Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, F. Martin:
  Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. 489-496
• 
  Rainer Duschl, M. Kerber, A. Avellan, S. Jakschik, U. Schroeder, S. Kudelka:
  Reliability aspects of Hf-based capacitors: Breakdown and trapping effects. 497-500
• 
  Paolo Srinivasan, Felice Crupi, Eddy Simoen, Paolo Magnone, Calogero Pace, Durga Misra, Cor Claeys:
  Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. 501-504
• 
  A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, H. E. Maes, Guido Groeseneken, J. A. Kittl:
  NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. 505-507
• 
  Giuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt:
  Characterization of charge trapping in SiO₂/Al₂O₃ dielectric stacks by pulsed C-V technique. 508-512
• 
  A. Kerber, Luigi Pantisano, Anabela Veloso, Guido Groeseneken, M. Kerber:
  Reliability screening of high-k dielectrics based on voltage ramp stress. 513-517
• 
  Z. Li, Tom Schram, Luigi Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, Sven Van Elshocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, Stefan De Gendt, Kristin De Meyer:
  Mechanism of O₂-anneal induced V_fb shifts of Ru gated stacks. 518-520
• 
  A. Rothschild, R. Mitsuhashi, C. Kerner, X. Shi, J. L. Everaert, L. Date, Thierry Conard, Olivier Richard, C. Vrancken, R. Verbeeck, Anabela Veloso, A. Lauwers, M. de Potter de ten Broeck, I. Debusschere, M. Jurczak, M. Niwa, P. Absil, S. Biesemans:
  Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V V_t Ni-FUSI CMOS transistors. 521-524
• 
  Isodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt:
  Distribution and generation of traps in SiO₂/Al₂O₃ gate stacks. 525-527
• 
  Ralf Endres, Yordan Stefanov, Udo Schwalke:
  Electrical characterization of crystalline Gd₂O₃ gate dielectric MOSFETs fabricated by damascene metal gate technology. 528-531
• 
  S. F. Galata, E. K. Evangelou, Y. Panayiotatos, A. Sotiropoulos, A. Dimoulas:
  Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium. 532-535
• 
  S. Abermann, J. K. Efavi, G. Sjöblom, Max C. Lemme, J. Olsson, Emmerich Bertagnolli:
  Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO₂ and ZrO₂ high-kappa dielectrics. 536-539
• 
  C. Merckling, G. Delhaye, M. El-Kazzi, S. Gaillard, Y. Rozier, L. Rapenne, B. Chenevier, O. Marty, G. Saint-Girons, M. Gendry, Y. Robach, G. Hollinger:
  Epitaxial growth of LaAlO₃ on Si(0 0 1) using interface engineering. 540-543
• 
  Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis:
  Influence of the SiO₂ layer thickness on the degradation of HfO₂/SiO₂ stacks subjected to static and dynamic stress conditions. 544-547
• 
  Fu-Chien Chiu, Wen-Chieh Shih, Joseph Ya-min Lee, Huey-Liang Hwang:
  An investigation of surface state capture cross-sections for metal-oxide-semiconductor field-effect transistors using HfO₂ gate dielectrics. 548-551
• 
  Giuseppe La Rosa, Stewart E. Rauch III:
  Channel hot carrier effects in n-MOSFET devices of advanced submicron CMOS technologies. 552-558
• 
  Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken:
  Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. 559-566
• 
  G. Néau, F. Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau:
  Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. 567-572
• 
  Cédric Leyris, F. Martinez, M. Valenza, Alain Hoffmann, J. C. Vildeuil:
  Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization. 573-576
• 
  Cora Salm, Eric Hoekstra, Jay S. Kolhatkar, André J. Hof, Hans Wallinga, Jurriaan Schmitz:
  Low-frequency noise in hot-carrier degraded nMOSFETs. 577-580
• 
  R. Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
  Effect of oxide breakdown on RS latches. 581-584
• 
  R. F. Steimle, R. Muralidhar, R. Rao, M. Sadd, C. T. Swift, Jane Yater, B. Hradsky, S. Straub, H. Gasquet, L. Vishnubhotla, E. J. Prinz, T. Merchant, B. Acred, K. Chang, B. E. White Jr.:
  Silicon nanocrystal non-volatile memory for embedded memory scaling. 585-592
• 
  Cosimo Gerardi, Salvatore Lombardo, Giuseppe Ammendola, Giovanni Costa, Valentina Ancarani, Domenico Mello, Stella Giuffrida, Maria Cristina Plantamura:
  Study of nanocrystal memory integration in a Flash-like NOR device. 593-597
• 
  A. Sebastiani, R. Piagge, A. Modelli, G. Ghidini:
  High-K dielectrics for inter-poly application in non volatile memories. 598-601
• 
  Andrea Cester, A. Gasperin, Nicola Wrachien, Alessandro Paccagnella, V. Ancarani, Cosimo Gerardi:
  Ionising radiation and electrical stress on nanocrystal memory cell array. 602-605
• 
  Hsin-hao Hsu, Joseph Ya-min Lee:
  Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications. 606-609
• 
  Guoqiao Tao, Cedric Ouvrard, Helene Chauveau, Som Nath:
  Experimental study of carrier transport in multi-layered structures. 610-614
• 
  Yosef Raskin, Asaad Salameh, David Betel, Yakov Roizin:
  Reliability of HTO based high-voltage gate stacks for flash memories. 615-618
• 
  Yu-Di Su, Wen-Chieh Shih, Joseph Ya-min Lee:
  The characterization of retention properties of metal-ferroelectric (PbZr_0.53Ti_0.47O₃)-insulator (Dy₂O₃, Y₂O₃)-semiconductor devices. 619-622
• 
  Stefan Holzer, Alireza Sheikholeslami, Markus Karner, Tibor Grasser, Siegfried Selberherr:
  Comparison of deposition models for a TEOS LPCVD process. 623-625
• 
  V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, V. Ostahov, O. Winkler, B. Spangenberg, H. Kurz:
  Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation. 626-630
• 
  Nicolas Baboux, C. Busseret, Carole Plossu, Philippe Boivin:
  Peculiarities of electron tunnel injection to the drain of EEPROMs. 631-634
• 
  Martin Lemberger, A. Baunemann, Anton J. Bauer:
  Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors. 635-639
• 
  P. Fiorenza, R. Lo Nigro, V. Raineri, S. Lombardo, R. G. Toro, Graziella Malandrino, I. L. Fragalà:
  Defects induced anomalous breakdown kinetics in Pr₂O₃ by micro- and nano-characterization. 640-644
• 
  I. Z. Mitrovic, Octavian Buiu, Steve Hall, C. Bungey, T. Wagner, W. Davey, Y. Lu:
  Electrical and structural properties of hafnium silicate thin films. 645-648
• 
  Yu. Yu. Lebedinskii, A. V. Zenkevich:
  Effective work function of NiSi/HfO₂ gate stacks measured with X-ray photoelectron spectroscopy. 649-652
• 
  Salvador Dueñas, Helena Castán, Héctor García, L. Bailón, Kaupo Kukli, T. Hatanpää, Mikko Ritala, Markku Leskelä:
  Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics. 653-656
• 
  A. Zenkevich, Yu. Lebedinskii, G. Scarel, Marco Fanciulli, A. Baturin, N. Lubovin:
  Degradation kinetics of ultrathin HfO₂ layers on Si(1 0 0) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM. 657-659
• 
  Charles Leroux, Gérard Ghibaudo, Gilles Reimbold:
  Accurate determination of flat band voltage in advanced MOS structure. 660-664
• 
  Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis:
  Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. 665-668
• 
  I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler:
  Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon. 669-672
• 
  Mathias Rommel, Anton J. Bauer, Heiner Ryssel:
  Quantitative oxide charge determination by photocurrent analysis. 673-677
• 
  Octavian Buiu, Steve Hall, O. Engstrom, B. Raeissi, M. Lemme, Paul K. Hurley, K. Cherkaoui:
  Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation. 678-681
• 
  Nicola Delmonte, B. E. Watts, Giovanni Chiorboli, Paolo Cova, Roberto Menozzi:
  Test structures for dielectric spectroscopy of thin films at microwave frequencies. 682-685
• 
  Alexander A. Demkov, Onise Sharia, Xuhui Luo, Jaekwang Lee:
  Density functional theory of high-k dielectric gate stacks. 686-693
• 
  F. Sacconi, J. M. Jancu, M. Povolotskyi, Aldo Di Carlo:
  Full-band tunneling in high-kappa dielectric MOS structures. 694-696
• 
  Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer:
  Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures. 697-699
• 
  L. Pinzelli, M. Gros-Jean, Y. Bréchet, F. Volpi, A. Bajolet, J.-C. Giraudin:
  High-K dielectric deposition in 3D architectures: The case of Ta₂O₅ deposited with metal-organic precursor TBTDET. 700-703
• 
  Markus Karner, Andreas Gehring, M. Wagner, Robert Entner, Stefan Holzer, Wolfgang Gös, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr:
  VSP - A gate stack analyzer. 704-708
• 
  P. Boulenc, I. Devos:
  Templates for LaAlO₃ epitaxy on silicon. 709-713
• 
  Y. V. Gomeniuk, A. N. Nazarov, Ya. N. Vovk, V. S. Lysenko, Yi Lu, Octavian Buiu, Steve Hall, R. J. Potter, P. Chalker:
  Charge trapping and interface states in hydrogen annealed HfO₂-Si structures. 714-717
• 
  Simon A. Rushworth, Hywel Davies, Andrew J. Kingsley, Thomas Leese, Rajesh Odedra:
  Volatility and vapourisation characterisation of new precursors. 718-721
• 
  Y. Lu, Octavian Buiu, Steve Hall, I. Z. Mitrovic, W. Davey, R. J. Potter, P. R. Chalker:
  Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. 722-725
• 
  I. P. Tyagulskyy, I. N. Osiyuk, V. S. Lysenko, A. N. Nazarov, Steve Hall, Octavian Buiu, Y. Lu, R. Potter, P. Chalker:
  Charge trapping characterization of MOCVD HfO₂/p-Si interfaces at cryogenic temperatures. 726-728
• 
  T. Nguyen, C. Busseret, Liviu Militaru, A. Poncet, D. Aimé, Nicolas Baboux, Carole Plossu:
  Parameters extraction of hafnium based gate oxide capacitors. 729-732
• 
  M. Martyniuk, J. Antoszewski, C. A. Musca,