Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Lifetime modeling of intrinsic gate oxide breakdown at high temperature."

R. Moonen et al. (2007)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2007.07.039

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/MoonenVLCMB07
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/MoonenVLCMB07
R. Moonen, Piet Vanmeerbeek, G. Lekens, Ward De Ceuninck, Peter Moens, J. Boutsen:
Lifetime modeling of intrinsic gate oxide breakdown at high temperature. Microelectron. Reliab. 47(9-11): 1389-1393 (2007)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.