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X. Federspiel
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2020 – today
- 2024
- [c33]X. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy, Florian Cacho:
Non-conducting Hot carrier temperature activation and temperature sense effect. IRPS 2024: 1-6 - [c32]Florian Cacho, P. Cathelin, Joycelyn Hai, S. Bouvot, J. Nowakowski, M. Martinez, R. Debroucke, S. Jean, R. Paulin, J. Antonijevic, X. Federspiel, Nicolas Planes, Giuseppe Papotto, Alessandro Parisi, Alessandro Finocchiaro, Andrea Cavarra, Alessandro Castorina, Claudio Nocera, Giuseppe Palmisano:
Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS. IRPS 2024: 4 - [c31]A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier:
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. IRPS 2024: 4 - 2023
- [c30]C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy:
Insight Into HCI Reliability on I/O Nitrided Devices. IRPS 2023: 1-5 - [c29]X. Federspiel, A. Griffon, M. Barlas, P. Lamontagne:
Effect of Frequency on Reliability Of High-K MIM Capacitors. IRPS 2023: 1-6 - [c28]Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix:
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. IRPS 2023: 1-8 - [c27]Joycelyn Hai, Florian Cacho, X. Federspiel, Tidjani Garba-Seybou, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould:
Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation. IRPS 2023: 1-6 - [c26]Mathieu Sicre, X. Federspiel, Bastien Mamdy, David Roy, Françis Calmon:
Characterization and modeling of DCR and DCR drift variability in SPADs. IRPS 2023: 1-5 - 2022
- [c25]Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix
, Florian Cacho:
New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. IRPS 2022: 11 - [c24]M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo:
Frequency dependant gate oxide TDDB model. IRPS 2022: 25-1 - 2021
- [c23]Florian Cacho, Lorena Anghel
, Xavier Federspiel:
Monitoring Setup and Hold Timing Limits. IRPS 2021: 1-6 - [c22]Xavier Federspiel, Abdourahmane Camara, Audrey Michard, Cheikh Diouf, Florian Cacho:
HCI Temperature sense effect from 180nm to 28nm nodes. IRPS 2021: 1-5 - [c21]Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix
, Florian Cacho:
Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling. IRPS 2021: 1-5 - [c20]Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent:
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS 2021: 1-5 - 2020
- [c19]Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho:
Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. IRPS 2020: 1-8 - [c18]Xavier Federspiel, Cheikh Diouf, Florian Cacho, Emmanuel Vincent:
Comparison of variability of HCI induced drift for SiON and HKMG devices. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c17]Audrey Michard, Florian Cacho, Damien Celeste, Xavier Federspiel:
Global and Local Process Variation Simulations in Design for Reliability approach. IOLTS 2019: 72-75 - [c16]Florian Cacho, X. Federspiel, D. Nouguier, Cheikh Diouf:
Investigation of NBTI Dynamic Behavior with Ultra-Fast Measurement. IRPS 2019: 1-6 - [c15]Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix
, D. Muller, David Roy:
Process Optimization for HCI Improvement in I/O Analog Devices. IRPS 2019: 1-6 - [c14]A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard:
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS 2019: 1-5 - 2018
- [j8]Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold:
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. Microelectron. Reliab. 80: 100-108 (2018) - [j7]D. Nouguier, X. Federspiel, Gérard Ghibaudo
, M. Rafik, David Roy:
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. 87: 106-112 (2018) - [c13]Florian Cacho, D. Nouguier, M. Arabi, X. Federspiel, Y. Carminati, M. Saliva:
Integrated Test Structures for Reliability Investigation under Dynamic Stimuli. IOLTS 2018: 1-5 - [c12]M. Arabi, A. Cros, X. Federspiel, Cheikh Ndiaye, Vincent Huard, M. Rafik:
Modeling self-heating effects in advanced CMOS nodes. IRPS 2018: 3-1 - [c11]Vincent Huard, Cheikh Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix
:
Key parameters driving transistor degradation in advanced strained SiGe channels. IRPS 2018: 4-1 - [c10]M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf:
AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment. IRPS 2018: 4 - [c9]Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik:
A new method for quickly evaluating reversible and permanent components of the BTI degradation. IRPS 2018: 6-1 - [c8]Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
:
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS 2018: 6 - 2017
- [j6]R. Lajmi, Florian Cacho, Estelle Lauga-Larroze, Sylvain Bourdel, Ph. Benech, Vincent Huard, X. Federspiel:
Characterization of Low Drop-Out during ageing and design for yield. Microelectron. Reliab. 76-77: 92-96 (2017) - [c7]Claire Fenouillet-Béranger, S. Beaurepaire, Fabien Deprat, Alexandre Ayres De Sousa, Laurent Brunet, Perrine Batude, Olivier Rozeau, François Andrieu, Paul Besombes, M.-P. Samson, Bernard Previtali, F. Nemouchi, G. Rodriguez, Philippe Rodriguez
, R. Famulok, Nils Rambal, Viorel Balan, Z. Saghi, V. Jousseaume, Charles-Antoine Guérin, F. Ibars, F. Proud, D. Nouguier, David Ney, V. Delaye, H. Dansas, X. Federspiel, Maud Vinet:
Guidelines for intermediate back end of line (BEOL) for 3D sequential integration. ESSDERC 2017: 252-255 - 2016
- [j5]Cheikh Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix
:
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. Microelectron. Reliab. 64: 158-162 (2016) - [j4]Alain Bravaix
, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Vincent Huard:
Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. Microelectron. Reliab. 64: 163-167 (2016) - [c6]Alain Bravaix
, M. Saliva, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard:
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. IOLTS 2016: 43-46 - 2015
- [c5]M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel:
Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. DATE 2015: 441-446 - [c4]Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu:
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS 2015: 2 - [c3]A. Benoist, S. Denorme, X. Federspiel, Bruno Allard, Philippe Candelier:
Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology. IRPS 2015: 3 - [c2]A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo
:
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS 2015: 5 - [c1]P. Mora, X. Federspiel, Florian Cacho, Vincent Huard, Wafa Arfaoui:
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation. IRPS 2015: 6 - 2012
- [j3]Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix
:
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52(11): 2513-2520 (2012)
2000 – 2009
- 2007
- [j2]S. Orain, J.-C. Barbé, X. Federspiel, P. Legallo, H. Jaouen:
FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding. Microelectron. Reliab. 47(2-3): 295-301 (2007) - 2006
- [j1]S. Courtas, M. Grégoire, X. Federspiel, N. Bicaïs-Lépinay, C. Wyon:
Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development. Microelectron. Reliab. 46(9-11): 1530-1535 (2006)
Coauthor Index
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