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"A comprehensive study of stress induced leakage current using a floating ..."

D. Pic, Didier Goguenheim, Jean-Luc Ogier (2007)

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DOI: 10.1016/J.MICROREL.2007.07.040

access: closed

type: Journal Article

metadata version: 2020-02-22

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D. Pic, Didier Goguenheim, Jean-Luc Ogier:
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. Microelectron. Reliab. 47(9-11): 1373-1377 (2007)

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