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"Influence of the SiO2 layer thickness on the degradation of ..."

Esteve Amat et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.01.003

access: closed

type: Journal Article

metadata version: 2020-02-22

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Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis:
Influence of the SiO₂ layer thickness on the degradation of HfO₂/SiO₂ stacks subjected to static and dynamic stress conditions. Microelectron. Reliab. 47(4-5): 544-547 (2007)

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