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2020 – today
- 2020
[c11]Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho:
Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. IRPS 2020: 1-8
2010 – 2019
- 2019
- [c10]C. Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, D. Roy:
Process Optimization for HCI Improvement in I/O Analog Devices. IRPS 2019: 1-6 - 2018
- [c9]Vincent Huard, Souhir Mhira, A. Barclais, X. Lecocq, F. Raugi, M. Cantournet, Alain Bravaix:
Managing electrical reliability in consumer systems for improved energy efficiency. IRPS 2018: 3 - [c8]Souhir Mhira, Vincent Huard, D. Arora, Philippe Flatresse, Alain Bravaix:
Resilient automotive products through process, temperature and aging compensation schemes. IRPS 2018: 3 - [c7]Vincent Huard, C. Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix:
Key parameters driving transistor degradation in advanced strained SiGe channels. IRPS 2018: 4-1 - 2017
- [j16]Vincent Huard, Souhir Mhira, Florian Cacho, Alain Bravaix:
Enabling robust automotive electronic components in advanced CMOS nodes. Microelectron. Reliab. 76-77: 13-24 (2017) - [c6]Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, A. Jain, C. R. Parthasarathy, Alain Bravaix:
Dynamic aging compensation and Safety measures in Automotive environment. IOLTS 2017: 106-112 - [c5]Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, A. Jain, C. R. Parthasarathy, Alain Bravaix:
Cognitive approach to support dynamic aging compensation. ITC 2017: 1-7 - 2016
- [j15]C. Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix:
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. Microelectron. Reliab. 64: 158-162 (2016) - [j14]Alain Bravaix
, Florian Cacho, X. Federspiel, C. Ndiaye, Souhir Mhira, Vincent Huard:
Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. Microelectron. Reliab. 64: 163-167 (2016) - [c4]Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, C. Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard:
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. IOLTS 2016: 43-46 - 2015
- [c3]M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel:
Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. DATE 2015: 441-446 - [c2]M. Saliva, Florian Cacho, C. Ndiaye, Vincent Huard, D. Angot, Alain Bravaix, Lorena Anghel:
Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. IRPS 2015: 4 - 2012
- [j13]Yoann Mamy Randriamihaja, Vincent Huard, X. Federspiel, A. Zaka, P. Palestri, D. Rideau, David Roy, Alain Bravaix:
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52(11): 2513-2520 (2012)
2000 – 2009
- 2009
- [j12]F. Molière, B. Foucher, Philippe Perdu, Alain Bravaix:
Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics. Microelectron. Reliab. 49(9-11): 1381-1385 (2009) - [j11]Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix:
Reliability aspects of gate oxide under ESD pulse stress. Microelectron. Reliab. 49(12): 1407-1416 (2009) - 2007
- [j10]D. Lachenal, Alain Bravaix, Frederic Monsieur, Yannick Rey-Tauriac:
Degradation mechanism understanding of NLDEMOS SOI in RF applications. Microelectron. Reliab. 47(9-11): 1634-1638 (2007) - [c1]C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, M. Denais, Vincent Huard:
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. PATMOS 2007: 191-200 - 2006
- [j9]C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix:
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46(9-11): 1464-1471 (2006) - 2005
- [j8]Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent:
A thorough investigation of MOSFETs NBTI degradation. Microelectron. Reliab. 45(1): 83-98 (2005) - [j7]Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin:
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. Microelectron. Reliab. 45(3-4): 487-492 (2005) - [j6]C. Trapes, Didier Goguenheim, Alain Bravaix:
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. Microelectron. Reliab. 45(5-6): 883-886 (2005) - [j5]Yannick Rey-Tauriac, J. Badoc, B. Reynard, R. A. Bianchi, D. Lachenal, Alain Bravaix:
Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. Microelectron. Reliab. 45(9-11): 1349-1354 (2005) - [j4]Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45(9-11): 1370-1375 (2005) - 2004
- [j3]Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent:
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. Microelectron. Reliab. 44(1): 65-77 (2004) - 2003
- [j2]Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent:
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectron. Reliab. 43(8): 1241-1246 (2003) - 2001
- [j1]Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent:
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. Microelectron. Reliab. 41(9-10): 1313-1318 (2001)
Coauthor Index
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