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"Analysis of hot carrier effects in a 0.35 µm high voltage n-channel ..."

Hubert Enichlmair et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.07.034

access: closed

type: Journal Article

metadata version: 2023-09-30

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Hubert Enichlmair, Sara Carniello, Jong Mun Park, Rainer Minixhofer:
Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor. Microelectron. Reliab. 47(9-11): 1439-1443 (2007)

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