"Circuit level prediction of device performance degradation due to negative ..."

Rihito Kuroda et al. (2007)

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DOI: 10.1016/J.MICROREL.2006.06.013

access: closed

type: Journal Article

metadata version: 2020-10-26

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  - https://dblp.org/rec/journals/mr/KurodaTWMYSO07
Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi:
Circuit level prediction of device performance degradation due to negative bias temperature stress. Microelectron. Reliab. 47(6): 930-936 (2007)

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