"Two-dimensional numerical simulations of 1/f noise by GR mechanisms in ..."

A. Boukhenoufa, Lionel Pichon, C. Cordier (2007)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2007.07.059

access: closed

type: Journal Article

metadata version: 2020-10-28

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/BoukhenoufaPC07
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BoukhenoufaPC07
A. Boukhenoufa, Lionel Pichon, C. Cordier:
Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology. Microelectron. Reliab. 47(9-11): 1419-1423 (2007)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.