Microelectronics Reliability, Volume 49

Volume 49, Number 1, January 2009

Regular papers

• 
  W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan:
  Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. 1-7
• 
  Chao Gao, Jun Wang, Lei Wang, Andrew Yap, Hong Li:
  Two-stage hot-carrier degradation behavior of 0.18 µm 18 V n-type DEMOS and its recovery effect. 8-12
• 
  Hei Wong, Y. Fu, Juin J. Liou, Y. Yue:
  Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors. 13-16
• 
  Yi Shan, John He, Wen Huang:
  New substrate-triggered ESD protection structures in a 0.18-µm CMOS process without extra mask. 17-25
• 
  M. S. Rahman, E. K. Evangelou, I. I. Androulidakis, Athanasios Dimoulas:
  Study of stress-induced leakage current (SILC) in HfO₂/Dy₂O₃ high-kappa gate stacks on germanium. 26-31
• 
  Peter G. Muzykov, Robert M. Kennedy, Qingchun Zhang, Craig Capell, Al Burk, Anant Agarwal, Tangali S. Sudarshan:
  Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors. 32-37
• 
  Jun Liu, Wing-Shan Tam, Hei Wong, Valeriu Filip:
  Temperature-dependent light-emitting characteristics of InGaN/GaN diodes. 38-41
• 
  Keun Ho Rhew, Su Chang Jeon, Dae Hee Lee, Byueng-Su Yoo, Ilgu Yun:
  Reliability assessment of 1.55-µm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests. 42-50
• 
  Reiner W. Kuehl:
  Stability of thin film resistors - Prediction and differences base on time-dependent Arrhenius law. 51-58
• 
  Ta-Hsuan Lin, Stephen Paul, Susan S. Lu, Huitian Lu:
  A study on the performance and reliability of magnetostatic actuated RF MEMS switches. 59-65
• 
  Haifei Bao, Zhaohui Song, Deren Lu, Xinxin Li:
  A simple estimation of transverse response of high-g accelerometers by a free-drop-bar method. 66-73
• 
  V. Born, M. Beck, O. Bosholm, D. Dalleau, S. Glenz, I. Haverkamp, G. Kurz, F. Lange, Anja Vest:
  Extended metallization reliability testing: Combining standard wafer level with product tests to increase test sensitivity. 74-78
• 
  Fang Liu, Guang Meng, Mei Zhao, Jun feng Zhao:
  Experimental and numerical analysis of BGA lead-free solder joint reliability under board-level drop impact. 79-85
• 
  Weiqun Peng:
  An investigation of Sn pest in pure Sn and Sn-based solders. 86-91
• 
  Kati Kokko, Hanna Harjunpää, Pekka Heino, Minna Kellomäki:
  Influence of medical sterilization on ACA flip chip joints using conformal coating. 92-98
• 
  Sangwook Kwon, Jongseok Kim, Gilsu Park, Youngtack Hong, Byeong-Kwon Ju, Insang Song:
  RF device package method using Au to Au direct bonding technology. 99-102

Volume 49, Number 2, February 2009

Introductory Invited Paper

• 
  Zeynep Çelik-Butler, Siva Prasad Devireddy, Hsing-Huang Tseng, Philip J. Tobin, Ania Zlotnicka:
  A low-frequency noise model for advanced gate-stack MOSFETs. 103-112

Research Papers

• 
  Te-Kuang Chiang:
  A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's. 113-119
• 
  Giacomo Langfelder, Antonio Longoni, Federico Zaraga, Alberto Corigliano, Aldo Ghisi, A. Merassi:
  A new on-chip test structure for real time fatigue analysis in polysilicon MEMS. 120-126
• 
  A. Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mark D. Vaudin, Mona E. Zaghloul:
  Experimental and simulation studies of resistivity in nanoscale copper films. 127-134
• 
  Fernanda Irrera, Ivan Piccoli, Giuseppina Puzzilli, Massimo Rossini, Tommaso Vali:
  Reliability improvements in 50 nm MLC NAND flash memory using short voltage programming pulses. 135-138
• 
  Ee-Hua Wong, S. K. W. Seah, W. D. van Driel, J. F. J. M. Caers, N. Owens, Y.-S. Lai:
  Advances in the drop-impact reliability of solder joints for mobile applications. 139-149
• 
  Xuefen Ong, Soon Wee Ho, Yue Ying Ong, Leong Ching Wai, Kripesh Vaidyanathan, Yeow Kheng Lim, David Yeo, Kai Chong Chan, Juan Boon Tan, Dong Kyun Sohn, Liang Choo Hsia, Zhong Chen:
  Underfill selection methodology for fine pitch Cu/low-k FCBGA packages. 150-162
• 
  Yue-Tzu Yang, Huan-Sen Peng:
  Investigation of planted pin fins for heat transfer enhancement in plate fin heat sink. 163-169
• 
  Xiaoxiao Liu, Guangsheng Ma, Jingbo Shao, Zhi Yang, Guanjun Wang:
  Interconnect crosstalk noise evaluation in deep-submicron technologies. 170-177
• 
  M. Reza Javaheri, Reza Sedaghat:
  Multi-valued logic mapping of resistive short and open delay-fault testing in deep sub-micron technologies. 178-185
• 
  Miljana Sokolovic, Vanco B. Litovski, Mark Zwolinski:
  New concepts of worst-case delay and yield estimation in asynchronous VLSI circuits. 186-198
• 
  Seyyed Javad Seyyed Mahdavi, Karim Mohammadi:
  Evolutionary derivation of optimal test sets for neural network based analog and mixed signal circuits fault diagnosis approach. 199-208

Research Notes

• 
  C. Cantin, C. Laviron, G. Gove:
  Charging control on high energy implanters: A process requirement demonstrated by plasma damage monitoring. 209-214
• 
  C. Cantin, G. Gove, G. Polisski:
  Verification and reduction of surface charging during high/medium current implantations by implementing plasma damage monitoring. 215-220

Volume 49, Number 3, March 2009

Special Section - Recent Research Advances in Pb-Free Solders

• 
  Yi-Shao Lai, Ho-Ming Tong, King-Ning Tu:
  Recent research advances in Pb-free solders. 221-222
• 
  Jun Shen, Y. C. Chan:
  Research advances in nano-composite solders. 223-234
• 
  Li-Wei Lin, Jenn-Ming Song, Yi-Shao Lai, Ying-Ta Chiu, Ning-Cheng Lee, Jun-Yen Uan:
  Alloying modification of Sn-Ag-Cu solders by manganese and titanium. 235-241
• 
  Tomi Laurila, J. Hurtig, Vesa Vuorinen, Jorma K. Kivilahti:
  Effect of Ag, Fe, Au and Ni on the growth kinetics of Sn-Cu intermetallic compound layers. 242-247
• 
  Yi-Wun Wang, Y. W. Lin, C. Robert Kao:
  Kirkendall voids formation in the reaction between Ni-doped SnAg lead-free solders and different Cu substrates. 248-252
• 
  Brook Huang-Lin Chao, Xuefeng Zhang, Seung-Hyun Chae, Paul S. Ho:
  Recent advances on kinetic analysis of electromigration enhanced intermetallic growth and damage formation in Pb-free solder joints. 253-263
• 
  Jiunn Chen, Yi-Shao Lai:
  Towards elastic anisotropy and strain-induced void formation in Cu-Sn crystalline phases. 264-268
• 
  S. M. Hayes, Nikhilesh Chawla, D. R. Frear:
  Interfacial fracture toughness of Pb-free solders. 269-287
• 
  Sun-Kyoung Seo, Sung K. Kang, Da-Yuan Shih, Hyuck Mo Lee:
  The evolution of microstructure and microhardness of Sn-Ag and Sn-Cu solders during high temperature aging. 288-295
• 
  Feng Gao, Hiroshi Nishikawa, Tadashi Takemoto, Jianmin Qu:
  Mechanical properties versus temperature relation of individual phases in Sn-3.0Ag-0.5Cu lead-free solder alloy. 296-302
• 
  Ruihong Zhang, Ran Zhao, Fu Guo, Zhidong Xia:
  Interfacial reaction between the electroless nickel immersion gold substrate and Sn-based solders. 303-309
• 
  S. T. Jenq, Hsuan-Hu Chang, Yi-Shao Lai, Tsung-Yueh Tsai:
  High strain rate compression behavior for Sn-37Pb eutectic alloy, lead-free Sn-1Ag-0.5Cu and Sn-3Ag-0.5Cu alloys. 310-317
• 
  Albert T. Wu, Y. C. Ding:
  The suppression of tin whisker growth by the coating of tin oxide nano particles and surface treatment. 318-322

Regular Papers

• 
  Vivek Chidambaram, John Hald, Jesper Henri Hattel:
  Development of gold based solder candidates for flip chip assembly. 323-330
• 
  J. de Vries, M. Jansen, Willem D. van Driel:
  Solder-joint reliability of HVQFN-packages subjected to thermal cycling. 331-339
• 
  Aldo Ghisi, Fabio Fachin, Stefano Mariani, Sarah Zerbini:
  Multi-scale analysis of polysilicon MEMS sensors subject to accidental drops: Effect of packaging. 340-349
• 
  Shufeng Zhao, Xingshou Pang:
  Investigation of delamination control in plastic package. 350-356

Volume 49, Number 4, April 2009

Research Papers

• 
  Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki:
  Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal. 357-364
• 
  A. Srivastava, Partha Sarkar, Chandan Kumar Sarkar:
  Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications. 365-370
• 
  Chia-Huai Ho, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Chun-Chang Lu, Tien-Ko Wang:
  Employing vertical dielectric layers to improve the operation performance of flash memory devices. 371-376
• 
  Fayçal Djeffal, Z. Ghoggali, Zohir Dibi, N. Lakhdar:
  Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges. 377-381
• 
  Dongyue Jin, Wanrong Zhang, Hongyun Xie, Liang Chen, Pei Shen, Ning Hu:
  Structure optimization of multi-finger power SiGe HBTs for thermal stability improvement. 382-386
• 
  Sik-Lam Siu, Hei Wong, Wing-Shan Tam, Kuniyuki Kakushima, Hiroshi Iwai:
  Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors. 387-391
• 
  Partha Sarkar, Abhijit Mallik, Chandan Kumar Sarkar:
  Study on the performance of sub 100 nm LACLATI MOSFETs for digital application. 392-396
• 
  Long Bin Tan, Xiaowu Zhang, Chwee Teck Lim, Vincent B. C. Tan:
  Mapping the failure envelope of board-level solder joints. 397-409
• 
  John Kontoleon:
  Soft error recovery in simplex and triplex memory systems. 410-423
• 
  Krzysztof Górecki, Janusz Zarebski:
  Electrothermal analysis of the self-excited push-pull DC-DC converter. 424-430
• 
  Krzysztof Górecki:
  Non-linear average electrothermal models of buck and boost converters for SPICE. 431-437
• 
  Jong Kang Park, Jong Tae Kim, Myong-Chul Shin:
  A CORDIC-based digital protective relay and its architecture. 438-447
• 
  Tatjana R. Nikolic, Mile K. Stojcev, Goran Lj. Djordjevic:
  CDMA bus-based on-chip interconnect infrastructure. 448-459

Research Notes

• 
  Raúl José Martín-Palma, Carlo G. Pantano, Akhlesh Lakhtakia:
  Towards the use of the conformal-evaporated-film-by-rotation technique in fabricating microelectronic circuits and microsystems. 460-462
• 
  Chel-Jong Choi, Ha-Yong Yang, Hyo-Bong Hong, Jin-Gyu Kim, Sung-Yong Chang, Jouhahn Lee:
  Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO₂ film. 463-465

Volume 49, Number 5, May 2009

Special Section - 2008 Reliability of Compound Semiconductors (ROCS) Workshop

• 
  Peter Ersland, Roberto Menozzi:
  Editorial. 467
• 
  Fulvio Bertoluzza, Nicola Delmonte, Roberto Menozzi:
  Three-dimensional finite-element thermal simulation of GaN-based HEMTs. 468-473
• 
  Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson:
  Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. 474-477
• 
  S. Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim:
  Physical degradation of GaN HEMT devices under high drain bias reliability testing. 478-483
• 
  C. Gil, Peter Ersland, A. Li:
  Determining DC/RF survivability limits of GaAs semiconductor circuits. 484-487
• 
  Charles S. Whitman:
  Prediction of transmission line lifetimes over temperature and current density. 488-494

Regular Papers

• 
  N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra:
  Temperature dependent time-to-breakdown (T_BD) of TiN/HfO₂ n-channel MOS devices in inversion. 495-498
• 
  Jean-Baptiste Sauveplane, Emmanuel Scheid, A. Deram:
  On the accurate determination of the thermomechanical properties of micro-scale material: Application to AlSi_1% chip metallization of a power semiconductor device. 499-505
• 
  Oi-Ying Wong, Wing-Shan Tam, Oi-Kan Shea, Shiu Hung Cheung, Jun Liu, Chi-Wah Kok, Hei Wong:
  Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor. 506-509
• 
  Zunxian Yang, Yun Huang, Xinxin Li, Guonan Chen:
  Investigation and simulation on the dynamic shock response performance of packaged high-g MEMS accelerometer versus the impurity concentration of the piezoresistor. 510-516
• 
  Jin-Sang Hwang, Myeong-Hwan Kim, Dong-Sung Seo, Jong-Woo Won, Doo-Kyung Moon:
  Effects of soft segment mixtures with different molecular weight on the properties and reliability of UV curable adhesives for electrodes protection of plasma display panel (PDP). 517-522
• 
  K. K. Jinka, A. Dasgupta, S. Ganesan, S. Ling:
  Chip-on board technology for low temperature environment. Part II: Thermomechanical stresses in encapsulated ball-wedge bond wires. 523-529
• 
  Bo Zhang, Han Ding, Xinjun Sheng:
  Reliability study of board-level lead-free interconnections under sequential thermal cycling and drop impact. 530-536
• 
  Nowshad Amin, Victor Lim, Foong Chee Seng, Rozaidi Razid, Ibrahim Ahmad:
  A practical investigation on nickel plated copper heat spreader with different catalytic activation processes for flip-chip ball grid array packages. 537-543
• 
  Wei-Chih Kuan, S. W. Liang, Chih Chen:
  Effect of bump size on current density and temperature distributions in flip-chip solder joints. 544-550
• 
  Mehdi Baradaran Tahoori, Hossein Asadi, Brian Mullins, David R. Kaeli:
  Obtaining FPGA soft error rate in high performance information systems. 551-557
• 
  W. S. Lau, Joy B. H. Tan, B. P. Singh:
  Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 degreeC by Ohmic contact recess etching. 558-561
• 
  Jianxin Zhu, Zhihua Chen:
  High-accurate computation of wave propagation in complex waveguides for microchip optical interconnections. 562-565

Volume 49, Number 6, June 2009

Special Section - IMAPS-CPMT Poland 2008

• 
  Andrzej Dziedzic:
  IMAPS-CPMT Poland 2008 - Guest Editorial. 567-568
• 
  Agata Skwarek, Krzysztof Witek, Jacek Ratajczak:
  Risk of whiskers formation on the surface of commercially available tin-rich alloys under thermal shocks. 569-572
• 
  Bálint Sinkovics, Olivér Krammer:
  Board level investigation of BGA solder joint deformation strength. 573-578
• 
  Selim Achmatowicz, Konrad Kielbasinski, Elzbieta Zwierkowska, Iwona Wyzkiewicz, Valentinas Baltrusaitis, Malgorzata Jakubowska:
  A new photoimageable platinum conductor. 579-584
• 
  Karol Malecha, Leszek J. Golonka:
  Three-dimensional structuration of zero-shrinkage LTCC ceramics for microfluidic applications. 585-591
• 
  Walter Smetana, Bruno Balluch, Günther Stangl, Sigrid Lüftl, Sabine Seidler:
  Processing procedures for the realization of fine structured channel arrays and bridging elements by LTCC-Technology. 592-599
• 
  Damian Nowak, Edward Mis, Andrzej Dziedzic, Jaroslaw Kita:
  Fabrication and electrical properties of laser-shaped thick-film and LTCC microresistors. 600-606
• 
  Edward Mis, Andrzej Dziedzic, Witold Mielcarek:
  Microvaristors in thick-film and LTCC circuits. 607-613
• 
  C. Belda, M. Fritsch, Claudia Feller, D. Westphal, G. Jung:
  Stability of solid electrolyte based thick-film CO₂ sensors. 614-620
• 
  Mathieu Hautefeuille, Brendan O'Flynn, Frank H. Peters, Conor O'Mahony:
  Miniaturised multi-MEMS sensor development. 621-626
• 
  Ryszard Kisiel, Zbigniew Szczepanski:
  Die-attachment solutions for SiC power devices. 627-629

Regular Papers

• 
  Alexandre Micol, Carmen Martin, Olivier Dalverny, Michel Mermet-Guyennet, Moussa Karama:
  Reliability of lead-free solder in power module with stochastic uncertainty. 631-641
• 
  Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang:
  Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability. 642-649
• 
  Yuan-Wen Hsiao, Ming-Dou Ker:
  Low-capacitance ESD protection design for high-speed I/O interfaces in a 130-nm CMOS process. 650-659
• 
  Samrat L. Sabat, Leandro dos Santos Coelho, Ajith Abraham:
  MESFET DC model parameter extraction using Quantum Particle Swarm Optimization. 660-666
• 
  Meng Liu, Ai-Ping Xian:
  Tin whisker growth on bulk Sn-Pb eutectic doping with Nd. 667-672

Volume 49, Number 7, July 2009

Review paper

• 
  José Ramón González, Manuel Vázquez, Neftalí Núñez, Carlos Algora, Ignacio Rey-Stolle, Beatriz Galiana:
  Reliability analysis of temperature step-stress tests on III-V high concentrator solar cells. 673-680

Research papers

• 
  S. Baishya:
  A surface potential and quasi-Fermi potential based drain current model for pocket-implanted MOS transistors in subthreshold regime. 681-688
• 
  Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Denise C. Lugo Muñoz, Álvaro D. Latorre Rey, Ching-Sung Ho, Juin J. Liou:
  Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction. 689-692
• 
  Te-Kuang Chiang:
  A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET's. 693-698
• 
  Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta, R. S. Gupta:
  Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect. 699-706
• 
  Juan Antonio Maestro, Pedro Reviriego:
  A method to eliminate the event accumulation problem from a memory affected by multiple bit upsets. 707-715
• 
  P. Thangadurai, W. D. Kaplan, V. Mikhelashvili, Gadi Eisenstein:
  The influence of electron-beam irradiation on electrical characteristics of metal-insulator-semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers. 716-720
• 
  Sean W. King, J. A. Gradner:
  Intrinsic stress fracture energy measurements for PECVD thin films in the SiO_xC_yN_z: H system. 721-726
• 
  Huimin Xie, Satoshi Kishimoto, Yanjie Li, Qingjun Liu, Yapu Zhao:
  Fabrication of micro-moiré gratings on a strain sensor structure for deformation analysis with micro-moiré technique. 727-733
• 
  Ming-Hwa R. Jen, Lee-Cheng Liu, Yi-Shao Lai:
  Electromigration on void formation of Sn3Ag1.5Cu FCBGA solder joints. 734-745
• 
  Asit Kumar Gain, Y. C. Chan, Ahmed Sharif, N. B. Wong, Winco K. C. Yung:
  Interfacial microstructure and shear strength of Ag nano particle doped Sn-9Zn solder in ball grid array packages. 746-753
• 
  F. X. Che, John H. L. Pang:
  Vibration reliability test and finite element analysis for flip chip solder joints. 754-760
• 
  Andrew Farris, Jianbiao Pan, Albert A. Liddicoat, Michael Krist, Nicholas A. Vickers, Brian J. Toleno, Dan Maslyk, Dongkai Shangguan, Jasbir Bath, Dennis Willie, David A. Geiger:
  Drop impact reliability of edge-bonded lead-free chip scale packages. 761-770
• 
  M. Mayer, J. T. Moon, John Persic:
  Measuring stress next to Au ball bond during high temperature aging. 771-781
• 
  Sari Merilampi, Teija Laine-Ma, Pekka Ruuskanen:
  The characterization of electrically conductive silver ink patterns on flexible substrates. 782-790
• 
  Robin Alastair Amy, Guglielmo S. Aglietti, Guy Richardson:
  Sensitivity analysis of simplified Printed Circuit Board finite element models. 791-799
• 
  Richárd Berényi:
  Prototyping of a reliable 3D flexible IC cube package by laser micromachining. 800-805
• 
  Jin-Sang Hwang, Ju-Yeol Kim, Seok-Chan Kang, Dong-Sung Seo, Younghwan Kwon:
  Feasibility study of non-conductive film (NCF) for plasma display panel (PDP) application. 806-812
• 
  Emina I. Milovanovic, Tatjana R. Nikolic, Mile K. Stojcev, Igor Z. Milovanovic:
  Multi-functional systolic array with reconfigurable micro-power processing elements. 813-820

Book review

• 
  Ahmed Amin:
  Defects in Microelectronic Materials and Devices, Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf (Eds.). Taylor and Francis Group LLC, Boca Raton, FL, USA. 821-822

Volume 49, Number 8, August 2009

Special Section - Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2008)

• 
  Artur Wymyslowski:
  Guest Editorial: 2008 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 823-824
• 
  Pradeep Lall, Madhura Hande, Chandan Bhat, Vikrant More, Rahul Vaidya:
  Prognostication of system-state in lead-free electronics equipment under cyclic and steady-state thermo-mechanical loads. 825-838
• 
  Rainer Dudek, Ralf Döring, Christine Bombach, Bernd Michel:
  Simulation based analysis of secondary effects on solder fatigue. 839-845
• 
  Jeroen J. M. Zaal, Hendrik Pieter Hochstenbach, Willem D. van Driel, G. Q. Zhang:
  Solder interconnect reliability under drop impact loading conditions using High-speed Cold Bump Pull. 846-852
• 
  Olaf van der Sluis, R. A. B. Engelen, P. H. M. Timmermans, G. Q. Zhang:
  Numerical analysis of delamination and cracking phenomena in multi-layered flexible electronics. 853-860
• 
  X. J. Fan, S. W. Ricky Lee, Q. Han:
  Experimental investigations and model study of moisture behaviors in polymeric materials. 861-871
• 
  Kaspar M. B. Jansen, C. Qian, Leo J. Ernst, C. Bohm, A. Kessler, Harald Preu, Matthias Stecher:
  Modeling and characterization of molding compound properties during cure. 872-876
• 
  Nancy Iwamoto, Ahila Krishnamoorthy, Richard Spear:
  Performance properties in thick film silicate dielectric layers using molecular modeling. 877-883

Regular Papers

• 
  R. Fernández-García, Ben Kaczer, Guido Groeseneken:
  A CMOS circuit for evaluating the NBTI over a wide frequency range. 885-891
• 
  Zhen-Ying Hsieh, Mu-Chun Wang, Chih Chen, Jia-Min Shieh, Yu-Ting Lin, Shuang-Yuan Chen, Heng-Sheng Huang:
  Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs. 892-896
• 
  Wei Bian, Jin He, Lining Zhang, Jian Zhang, Mansun Chan:
  Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs. 897-903
• 
  H. Altuntas, S. Altindal, H. Shtrikman, Suleyman Özçelik:
  A detailed study of current-voltage characteristics in Au/SiO₂/n-GaAs in wide temperature range. 904-911
• 
  Lu Liu, Jing-Ping Xu, L. L. Chen, Pui To Lai:
  A study on the improved programming characteristics of flash memory with Si₃N₄/SiO₂ stacked tunneling dielectric. 912-915
• 
  Ee-Hua Wong, Yiu-Wing Mai:
  The damped dynamics of printed circuit board and analysis of distorted and deformed half-sine excitation. 916-923
• 
  Seyyed Javad Seyyed Mahdavi, Karim Mohammadi:
  SCRAP: Sequential circuits reliability analysis program. 924-933

Volume 49, Numbers 9-11, September - November 2009

• 
  Dean Lewis, Nathalie Labat:
  Editorial. 935-936

Tutorials

• 
  D. M. Tanner:
  MEMS reliability: Where are we now? 937-940
• 
  Theo Smedes:
  ESD testing of devices, ICs and systems. 941-945

Topic A : Quality and Reliability Techniques for Devices and Systems

• 
  Corinne Bestory, François Marc, S. Duzellier, Hervé Levi:
  Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror. 946-951
• 
  Jean Luc Lefebvre, Christian Gautier, Frédéric Barbier:
  Correlation between EOS customer return failure cases and Over Voltage Stress (OVS) test method. 952-957
• 
  Charles Regard, Christian Gautier, Hélène Frémont, Patrick Poirier, Xiaosong Ma, Kaspar M. B. Jansen:
  Fast reliability qualification of SiP products. 958-962
• 
  Jean-Baptiste Gros, Geneviève Duchamp, Alain Meresse, Jean-Luc Levant:
  Electromagnetic immunity model of an ADC for microcontroller's reliability improvement. 963-966
• 
  Marcel Held, Klaus Fritz:
  Comparison and evaluation of newest failure rate prediction models: FIDES and RIAC 217Plus. 967-971
• 
  Mauro Ciappa, Luigi Mangiacapra, Maria Stangoni, Stephan Ott, Wolfgang Fichtner:
  Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation. 972-976
• 
  Digeorgia N. da Silva, André Inácio Reis, Renato P. Ribas:
  CMOS logic gate performance variability related to transistor network arrangements. 977-981

Topic B1 : Characterisation and Modelling of Failure Mechanisms in Silicon technologies and Nanoelectronics (Hot carriers, NBTI, High K gate materials, ...)

• 
  Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger:
  Process dependence of BTI reliability in advanced HK MG stacks. 982-988
• 
  Nozomu Kawai, Yasuhiro Dohi, Nobuyuki Wakai:
  Study for pulse stress NBTI characteristics degradation stress. 989-993
• 
  Yong Woo Jeon, Dae Hyun Ka, Chong-Gun Yu, Won-Ju Cho, M. Saif Islam, Jong Tae Park:
  NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer. 994-997
• 
  Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser:
  Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. 998-1002
• 
  Ivica Manic, Danijel Dankovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic:
  Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. 1003-1007
• 
  Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim:
  Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities. 1008-1012
• 
  Ph. Hehenberger, P.-J. Wagner, Hans Reisinger, Tibor Grasser:
  On the temperature and voltage dependence of short-term negative bias temperature stress. 1013-1017
• 
  M. A. Exarchos, George J. Papaioannou, Jalal Jomaah, Francis Balestra:
  Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs. 1018-1023
• 
  Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
  Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses. 1024-1028
• 
  A. Alaeddine, M. Kadi, K. Daoud, B. Mazari:
  Effects of electromagnetic near-field stress on SiGe HBT's reliability. 1029-1032
• 
  Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
  Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. 1033-1037
• 
  Jie Liao, Cher Ming Tan, Geert Spierings:
  Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI). 1038-1043
• 
  Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge, Jong Tae Park:
  NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs. 1044-1047
• 
  Néstor Berbel, Raúl Fernández-García, Ignacio Gil:
  Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter. 1048-1051
• 
  Enrique Miranda, Javier Martín-Martínez, Eamon O'Connor, G. Hughes, P. Casey, Karim Cherkaoui, S. Monaghan, R. Long, D. O'Connell, Paul K. Hurley:
  Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. 1052-1055
• 
  Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, B. Bertello, B. Villard:
  Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories. 1056-1059
• 
  Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, L. Morancho:
  Modeling charge variation during data retention of MLC Flash memories. 1060-1063
• 
  Lucas Brusamarello, Gilson I. Wirth, Roberto da Silva:
  Statistical RTS model for digital circuits. 1064-1069
• 
  M. Roca, Romain Laffont, Gilles Micolau, Frédéric Lalande, O. Pizzuto:
  A Modelisation of the temperature dependence of the Fowler-Nordheim current in EEPROM memories. 1070-1073
• 
  Mohamed-Tahar Chentir, J.-B. Jullien, B. Valtchanov, Emilien Bouyssou, Laurent Ventura, Christine Anceau:
  Percolation theory applied to PZT thin films capacitors breakdown mechanisms. 1074-1078

Topic B2 : Characterisation and Modelling of Failure Mechanisms in Silicon technologies and Nanoelectronics (Low K materials, Cu interconnects, ESD, ...)

• 
  Wolfgang Stadler, Tilo Brodbeck, Reinhold Gärtner, Harald Gossner:
  Do ESD fails in systems correlate with IC ESD robustness? 1079-1085
• 
  Arijit Roy, Yuejin Hou, Cher Ming Tan:
  Electromigration in width transition copper interconnect. 1086-1089
• 
  Joharsyah Ciptokusumo, Kirsten Weide-Zaage, Oliver Aubel:
  Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling. 1090-1095
• 
  Muhammad Bashir, Linda S. Milor:
  A methodology to extract failure rates for low-k dielectric breakdown with multiple geometries and in the presence of die-to-die linewidth variation. 1096-1102
• 
  Marianne Diatta, Emilien Bouyssou, David Trémouilles, P. Martinez, F. Roqueta, O. Ory, Marise Bafleur:
  Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD). 1103-1106
• 
  Philippe Galy, Sylvain Dudit, Michel Vallet, Corinne Richier, Christophe Entringer, Frank Jezequel, E. Petit, J. Beltritti:
  Impact and damage on deep sub-micron CMOS technology induced by substrate current due to ESD stress. 1107-1110
• 
  Augusto Tazzoli, Lorenzo Cerati, A. Andreini, Gaudenzio Meneghesso:
  Breakdown characterization of gate oxides in 35 and 70 Å BCD8 smart power technology. 1111-1115

Topic C1 : Advanced Techniques for failure analysis and Case studies: Electron and Optical Beam Testing (EOBT)

• 
  Masatsugu Yamashita, Chiko Otani, Sunmi Kim, Hironaru Murakami, Masayoshi Tonouchi, Toru Matsumoto, Yoshihiro Midoh, Katsuyoshi Miura, Koji Nakamae, Kiyoshi Nikawa:
  Laser THz emission microscope as a novel tool for LSI failure analysis. 1116-1126
• 
  Joy Y. Liao, Tung Ton, Nathan Slattengren, Steven Kasapi, William K. Lo, Howard L. Marks, Yin S. Ng, Ted R. Lundquist:
  Jitter analysis of PLL-generated clock propagation using Jitter Mitigation techniques with laser voltage probing. 1127-1131
• 
  Helmut Köck, Vladimír Kosel, Christian Djelassi, Michael Glavanovics, Dionyz Pogany:
  IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures. 1132-1136
• 
  Claus Hartmann, M. Wieberneit:
  Investigation on marginal failure characteristics and related defects analysed by soft defect localization. 1137-1142
• 
  C. Godlewski, Vincent Pouget, Dean Lewis, Mathieu Lisart:
  Electrical modeling of the effect of beam profile for pulsed laser fault injection. 1143-1147
• 
  Michael Hertl, Diane Weidmann, Jean-Claude Lecomte:
  An advanced quality and reliability assessment approach applied to thermal stress issues in electronic components and assemblies. 1148-1152
• 
  Jae-Seong Jeong, Sang-Deuk Park:
  Failure analysis of video processor defined as No Fault Found (NFF): Reproduction in system level and advanced analysis technique in IC level. 1153-1157

Topic C2 : Advanced Techniques for failure analysis and Case studies: new characterisation techniques

• 
  Rudolf Schlangen, Reiner Leihkauf, Uwe Kerst, Ted R. Lundquist, Peter Egger, Christian Boit:
  Physical analysis, trimming and editing of nanoscale IC function with backside FIB processing. 1158-1164
• 
  A.-K. Tiedemann, K. Kurz, M. Fakhri, Ralf Heiderhoff, J. C. H. Phang, L. J. Balk:
  Finite element analyses assisted Scanning Joule Expansion Microscopy on interconnects for failure analysis and reliability investigations. 1165-1168
• 
  Fulvio Infante, Philippe Perdu, Dean Lewis:
  Magnetic microscopy for 3D devices: Defect localization with high resolution and long working distance on complex system in package. 1169-1174
• 
  Gérald Haller, Aziz Machouat, Dean Lewis, Vincent Pouget:
  Net integrity checking by optical localization techniques. 1175-1181
• 
  Yasuhiro Mitsui, Takeshi Sunaoshi, Jon C. Lee:
  A study of electrical characteristic changes in MOSFET by electron beam irradiation. 1182-1187
• 
  Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani:
  Trapped charge and stress induced leakage current (SILC) in tunnel SiO₂ layers of de-processed MOS non-volatile memory devices observed at the nanoscale. 1188-1191
• 
  Roland Biberger, Guenther Benstetter, Holger Goebel:
  Displacement current sensor for contact and intermittent contact scanning capacitance microscopy. 1192-1195
• 
  Giovanna Mura, Massimo Vanzi:
  Lot reliability issues in commercial off the shelf (COTS) microelectronic devices. 1196-1199

Topic D1 : Failure Mechanisms in Microwave and High Bandgap Devices

• 
  Jesús A. del Alamo, Jungwoo Joh:
  GaN HEMT reliability. 1200-1206
• 
  Nicolo Ronchi, Franco Zanon, Antonio Stocco, Augusto Tazzoli, Enrico Zanoni, Gaudenzio Meneghesso:
  Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test. 1207-1210
• 
  Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle:
  Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. 1211-1215
• 
  Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui:
  Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. 1216-1221
• 
  Michele Piazza, Christian Dua, Mourad Oualli, Erwan Morvan, Dominique Carisetti, Frédéric Wyczisk:
  Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs. 1222-1225

Topic D2 : Failure Mechanisms in Photonic Devices

• 
  Cher Ming Tan, Boon Khai Eric Chen, Gan Xu, Yuanjie Liu:
  Analysis of humidity effects on the degradation of high-power white LEDs. 1226-1230
• 
  Jeung-Mo Kang, Jae-Wook Kim, Jeong-Hyeon Choi, Du-Hyun Kim, Ho-Ki Kwon:
  Life-time estimation of high-power blue light-emitting diode chips. 1231-1235
• 
  Nicola Trivellin, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda:
  Reliability analysis of InGaN Blu-Ray laser diode. 1236-1239
• 
  Eduardo Nogueira, Manuel Vázquez, Neftalí Núñez:
  Evaluation of AlGaInP LEDs reliability based on accelerated tests. 1240-1243
• 
  Tsung-Lin Chou, Chien-Fu Huang, Cheng-Nan Han, Shin-Yueh Yang, Kuo-Ning Chiang:
  Fabrication process simulation and reliability improvement of high-brightness LEDs. 1244-1249

Topic E : Packaging, Assemblies, Passive Components and MEMS

• 
  Hua Lu, Chris Bailey, Chunyan Yin:
  Design for reliability of power electronics modules. 1250-1255
• 
  Jinyu Jason Ruan, Nicolas Nolhier, George J. Papaioannou, David Trémouilles, Vincent Puyal, C. Villeneuve, T. Idda, Fabio Coccetti, Robert Plana:
  Accelerated lifetime test of RF-MEMS switches under ESD stress. 1256-1259
• 
  S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps:
  Characterisation of power modules ceramic substrates for reliability aspects. 1260-1266
• 
  Maxime Berthou, P. Retailleau, Hélène Frémont, Alexandrine Guédon-Gracia, C. Jéphos-Davennel:
  Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage. 1267-1272
• 
  Manoubi Auguste Bahi, Hélène Frémont, Jean-Pierre Landesman, Annabelle Gentil, Pascal Lecuyer:
  A new methodology for the identification of ball bond degradation during high-temperature aging tests on devices in standard plastic packages. 1273-1277
• 
  Haruka Kubo, Mauro Ciappa, Takayuki Masunaga, Wolfgang Fichtner:
  Multiscale simulation of aluminum thin films for the design of highly-reliable MEMS devices. 1278-1282
• 
  Golta Khatibi, W. Wroczewski, Brigitte Weiss, H. Ipser:
  A novel accelerated test technique for assessment of mechanical reliability of solder interconnects. 1283-1287
• 
  Peter Jacob, Willy Knecht, Albert Kunz, Giovanni Nicoletti, Thomas Lautenschlager, Moreno Mondada, Damien Pachoud:
  Reading distance degradation mechanisms of near-field RFID devices. 1288-1292
• 
  Mirko Bernardoni, Paolo Cova, Nicola Delmonte, Roberto Menozzi:
  Heat management for power converters in sealed enclosures: A numerical study. 1293-1298
• 
  Y. Liu, F. J. H. G. Kessels, Willem D. van Driel, J. A. S. van Driel, F. L. Sun, G. Q. Zhang:
  Comparing drop impact test method using strain gauge measurements. 1299-1303
• 
  Mohamed Matmat, Fabio Coccetti, Antoine Marty, Robert Plana, Christophe Escriba, Jean-Yves Fourniols, Daniel Estève:
  Capacitive RF MEMS analytical predictive reliability and lifetime characterization. 1304-1308
• 
  Usama Zaghloul, George J. Papaioannou, Fabio Coccetti, Patrick Pons, Robert Plana:
  Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions. 1309-1314
• 
  S. P. M. Noijen, Olaf van der Sluis, P. H. M. Timmermans, G. Q. Zhang:
  Numerical prediction of failure paths at a roughened metal/polymer interface. 1315-1318

Topic F : Extreme environments : Power devices, aeronautic and spatial electronics reliability

• 
  Uwe Scheuermann:
  Reliability challenges of automotive power electronics. 1319-1325
• 
  Philippe Monfraix, Regis Barbaste, Jean Luc Muraro, Claude Drevon, Jean Louis Cazaux:
  Quasi hermetic packaging for new generation of spaceborn microwave equipment. 1326-1329
• 
  Donatien Martineau, Thomas Mazeaud, Marc Legros, Philippe Dupuy, Colette Levade, G. Vanderschaeve:
  Characterization of ageing failures on power MOSFET devices by electron and ion microscopies. 1330-1333
• 
  Vezio Malandruccolo, Mauro Ciappa, Hubert Rothleitner, Wolfgang Fichtner:
  A new built-in screening methodology to achieve zero defects in the automotive environment. 1334-1340
• 
  B. Bernoux, René Escoffier, P. Jalbaud, Jean-Marie Dorkel:
  Source electrode evolution of a low voltage power MOSFET under avalanche cycling. 1341-1345
• 
  Georg Haberfehlner, Sergey Bychikhin, Viktor Dubec, Michael Heer, A. Podgaynaya, M. Pfost, Matthias Stecher, Erich Gornik, Dionyz Pogany:
  Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system. 1346-1351
• 
  Fabio Carastro, Alberto Castellazzi, Jon C. Clare, M. C. Johnson, Michael J. Bland, Patrick W. Wheeler:
  Reliability considerations in pulsed power resonant conversion. 1352-1357
• 
  Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche:
  Estimation of SiC JFET temperature during short-circuit operations. 1358-1362
• 
  Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro:
  Instable mechanisms during unclamped operation of high power IGBT modules. 1363-1369
• 
  Alexandre Micol, A. Zeanh, T. Lhommeau, Stephane Azzopardi, Eric Woirgard, Olivier Dalverny, Moussa Karama:
  An investigation into the reliability of power modules considering baseplate solders thermal fatigue in aeronautical applications. 1370-1374
• 
  Laurent Dupont, Gerard Coquery, K. Kriegel, A. Melkonyan:
  Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application. 1375-1380
• 
  F. Molière, B. Foucher, Philippe Perdu, Alain Bravaix:
  Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics. 1381-1385
• 
  Lucio Rossi, Michele Riccio, Ettore Napoli, Andrea Irace, Giovanni Breglio, Paolo Spirito:
  1300 V, 2 ms pulse inductive load switching test circuit with 20 ns selectable crowbar intervention. 1386-1390
• 
  H. El Brouji, Olivier Briat, Jean-Michel Vinassa, Hervé Henry, Eric Woirgard:
  Analysis of the dynamic behavior changes of supercapacitors during calendar life test under several voltages and temperatures conditions. 1391-1397
• 
  Yassine Belmehdi, Stephane Azzopardi, A. Benmansour, Jean-Yves Delétage, Eric Woirgard:
  Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation. 1398-1403

Volume 49, Number 12, December 2009

Special Section - Electrostatic Discharge Reliability

• 
  Vesselin K. Vassilev, Wolfgang Stadler:
  Editorial ESD reliability special section. 1405-1406
• 
  Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix:
  Reliability aspects of gate oxide under ESD pulse stress. 1407-1416
• 
  David Alvarez, Kiran V. Chatty, Christian Russ, Michel J. Abou-Khalil, Junjun Li, Robert Gauthier, Kai Esmark, Ralph Halbach, Christopher Seguin:
  Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. 1417-1423
• 
  Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs:
  Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain. 1424-1432
• 
  Guido Notermans, Olivier Quittard, Anco Heringa, Zeljko Mrcarica, Fabrice Blanc, Hans van Zwol, Theo Smedes, Thomas Keller, Peter C. de Jong:
  ESD robust high-voltage active clamps. 1433-1439
• 
  Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken:
  A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. 1440-1446
• 
  Farzan Farbiz, Elyse Rosenbaum:
  A new compact model for external latchup. 1447-1454
• 
  Michael Heer, Krzysztof Domanski, Kai Esmark, Ulrich Glaser, Dionyz Pogany, Erich Gornik, Wolfgang Stadler:
  Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. 1455-1464
• 
  Dejan M. Maksimovic, Fabrice Blanc, Guido Notermans, Theo Smedes, Thomas Keller:
  An ESD test reduction method for complex devices. 1465-1469
• 
  Tilo Brodbeck, Kai Esmark, Wolfgang Stadler:
  CDM tests on interface test chips for the verification of ESD protection concepts. 1470-1475
• 
  Heinrich Wolf, Horst A. Gieser, Dirk Walter:
  Investigating the CDM susceptibility of IC's at package and wafer level by capacitive coupled TLP. 1476-1481

Regular Papers

• 
  Lech Hasse, Alicja Konczakowska, Janusz M. Smulko:
  Classification of high-voltage varistors into groups of differentiated quality. 1483-1490
• 
  N. Mohankumar, Binit Syamal, Chandan Kumar Sarkar:
  Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications. 1491-1497
• 
  Anastasios A. Katsetos, Andrew C. Brendler:
  NBTI model development with regression analysis. 1498-1502
• 
  J. C. Sánchez, Magali Estrada:
  Stability of the J-V characteristics of (BEHP-PPV)-co-(MEH-PPV) based light-emitting diodes. 1503-1507
• 
  Servin Rathi, Jyotika Jogi, Mridula Gupta, R. S. Gupta:
  Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT. 1508-1514
• 
  Takayuki Hisaka, Hajime Sasaki, Yoichi Nogami, Kenji Hosogi, Naohito Yoshida, Anita A. Villanueva, Jesús A. del Alamo, Shigehiko Hasegawa, Hajime Asahi:
  Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions. 1515-1519
• 
  K.-H. Allers, Josef Böck, S. Boguth, K. Goller, Herbert Knapp, Rudolf Lachner:
  Dielectric thinning model applied to metal insulator metal capacitors with Al₂O₃ dielectric. 1520-1528
• 
  Jianxin Zhu, Rencheng Song:
  Fast and stable computation of optical propagation in micro-waveguides with loss. 1529-1536
• 
  Mariusz Felczak, Boguslaw Wiecek, Gilbert De Mey:
  Optimal placement of electronic devices in forced convective cooling conditions. 1537-1545
• 
  Liyu Yang, Joseph B. Bernstein, T. Koschmieder:
  Assessment of acceleration models used for BGA solder joint reliability studies. 1546-1554
• 
  Meng-Fu Shih, Wen-Bin Young:
  Experimental study of filling behaviors in the underfill encapsulation of a flip-chip. 1555-1562
• 
  Liyu Yang, Joseph B. Bernstein:
  Failure rate estimation of known failure mechanisms of electronic packages. 1563-1572
• 
  Ravindra V. Kshirsagar, Rajendra M. Patrikar:
  Design of a novel fault-tolerant voter circuit for TMR implementation to improve reliability in digital circuits. 1573-1577
• 
  Eduardas Bareisa, Vacius Jusas, Kestutis Motiejunas, Rimantas Seinauskas:
  Functional delay test generation based on software prototype. 1578-1585
• 
  Kuei-Hu Chang:
  Evaluate the orderings of risk for failure problems using a more general RPN methodology. 1586-1596