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"Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs."

Ivica Manic et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.07.010

access: closed

type: Journal Article

metadata version: 2024-02-05

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Ivica Manic, Danijel Dankovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic:
Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. Microelectron. Reliab. 49(9-11): 1003-1007 (2009)

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