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"Drain current saturation at high drain voltage due to pinch off instead of ..."

W. S. Lau et al. (2009)

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DOI: 10.1016/J.MICROREL.2008.10.006

access: closed

type: Journal Article

metadata version: 2020-02-22

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W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan:
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. Microelectron. Reliab. 49(1): 1-7 (2009)

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