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"Study of gate dielectric permittivity variation with different equivalent ..."

A. Srivastava, Partha Sarkar, Chandan Kumar Sarkar (2009)

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DOI: 10.1016/J.MICROREL.2008.11.008

access: closed

type: Journal Article

metadata version: 2022-10-02

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A. Srivastava, Partha Sarkar, Chandan Kumar Sarkar:
Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications. Microelectron. Reliab. 49(4): 365-370 (2009)

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