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ORCIDMicroelectronics Reliability, Volume 42
Volume 42, Number 1, January 2002
- Koen G. Verhaege, Markus P. J. Mergens, Christian C. Russ, John Armer, Phillip Jozwiak:
Novel design of driver and ESD transistors with significantly reduced silicon area. 3-13
- Yoshihiro Takao, Hiroshi Kudo, Junichi Mitani, Yoshiyuki Kotani, Satoshi Yamaguchi, Keizaburo Yoshie, Kazuo Sukegawa, Nobuhisa Naori, Satoru Asai, Michiari Kawano:
A 0.11 mum CMOS technology featuring copper and very low k interconnects with high performance and reliability. 15-25 - Jie-Hua Zhao, Wen-Jie Qi, Paul S. Ho:
Thermomechanical property of diffusion barrier layer and its effect on the stress characteristics of copper submicron interconnect structures. 27-34 - Douglas Brisbin, Prasad Chaparala:
Influence of test techniques on soft breakdown detection in ultra-thin oxides. 35-39 - M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter, G. Guégan:
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. 41-46 - Tetsuya Suemitsu
, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama:
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. 47-52 - Giovanna Sozzi, Roberto Menozzi:
High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study. 53-59 - Jaume Roig, David Flores, Miquel Vellvehí, José Rebollo, José Millán:
Reduction of self-heating effect on SOIM devices. 61-66 - Rodolfo Quintero, Antonio Cerdeira, Adelmo Ortiz-Conde:
Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors. 67-76 - Kinuko Mishiro, Shigeo Ishikawa, Mitsunori Abe, Toshio Kumai, Yutaka Higashiguchi, Ken-ichiro Tsubone:
Effect of the drop impact on BGA/CSP package reliability. 77-82 - Yu-Jung Huang, Mei-hui Guo, Shen-Li Fu:
Reliability and routability consideration for MCM placement. 83-91 - Chia-Pin Chiu, James Maveety, Quan A. Tran:
Characterization of solder interfaces using laser flash metrology. 93-100 - Tsorng-Dih Yuan, Bor Zen Hong, Howard H. Chen, Li-Kong Wang:
Integrated electro-thermomechanical analysis of nonuniformly chip-powered microelectronic system. 101-108 - Noel Y. A. Shammas, M. P. Rodriguez, F. Masana:
A simple method for evaluating the transient thermal response of semiconductor devices. 109-117 - Christine Naito, Michael Todd:
The effects of curing parameters on the properties development of an epoxy encapsulant material. 119-125 - C.-H. Chiao, W. Y. Wang:
Reliability improvement of fluorescent lamp using grey forecasting model. 127-134 - Seok Hwan Moon, Gunn Hwang, Ho Gyeong Yun, Tae Goo Choy, Young I. I. Kang:
Improving thermal performance of miniature heat pipe for notebook PC cooling. 135-140 - Shashi Paul, F. J. Clough:
A reliability of different metal contacts with amorphous carbon. 141-143 - Jin He, Xing Zhang, Ru Huang, Yangyuan Wang:
Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. 145-148 - F. S. Lomeli, Antonio Cerdeira:
Precise SPICE macromodel applied to high-voltage power MOSFET. 149-152 - Hu Guijun, Shi Jiawei, Zhang Shumei, Zhang Fenggang:
The correlation between the low-frequency electrical noise of high-power quantum well lasers and devices surface non-radiative current. 153-156
Volume 42, Number 2, February 2002
- Elena Atanassova, Albena Paskaleva:
Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs. 157-173 - Lingfeng Mao, Heqiu Zhang, Changhua Tan, Mingzhen Xu:
The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures. 175-181 - Lei Du, Yiqi Zhuang, Yong Wu:
1/fgamma Noise separated from white noise with wavelet denoising. 183-188 - Nobuyuki Sano, Kazuya Matsuzawa, Mikio Mukai, Noriaki Nakayama:
On discrete random dopant modeling in drift-diffusion simulations: physical meaning of 'atomistic' dopants. 189-199 - Shinya Ito, Hiroaki Namba, Tsuyoshi Hirata, Koichi Ando, Shin Koyama, Nobuyuki Ikezawa, Tatsuya Suzuki, Takehiro Saitoh, Tadahiko Horiuchi:
Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance. 201-209 - Young S. Chung, Bob Baird:
Power capability limits of power MOSFET devices. 211-218 - Takeshi Yanagisawa, Takeshi Kojima, Tadamasa Koyanagi, Kiyoshi Takahisa, Kuniomi Nakamura:
Changes in the characteristics of CuInGaSe2 solar cells under light irradiation and during recovery: degradation analysis by the feeble light measuring method. 219-223 - O. Jeandupeux, V. Marsico, A. Acovic, P. Fazan, H. Brune, K. Kern:
Use of scanning capacitance microscopy for controlling wafer processing. 225-231 - Philip M. Fabis:
The processing technology and electronic packaging of CVD diamond: a case study for GaAs/CVD diamond plastic packages. 233-252 - K. Jonnalagadda:
Reliability of via-in-pad structures in mechanical cycling fatigue. 253-258 - M. S. Kilijanski, Yu-Lin Shen:
Analysis of thermal stresses in metal interconnects with multilevel structures. 259-264 - Andrew J. G. Strandjord, Scott Popelar, Christine Jauernig:
Interconnecting to aluminum- and copper-based semiconductors (electroless-nickel/gold for solder bumping and wire bonding). 265-283 - Yu-Lung Lo, Chih-Chiang Tsao:
Wirebond profiles characterized by a modified linkage-spring model which includes a looping speed factor. 285-291 - Jinlin Wang:
Underfill of flip chip on organic substrate: viscosity, surface tension, and contact angle. 293-299 - Rajendra D. Pendse, Peng Zhou:
Methodology for predicting solder joint reliability in semiconductor packages. 301-305
Volume 42, Number 3, March 2002
- Guenther Benstetter, Michael W. Ruprecht, Douglas B. Hunt:
A review of ULSI failure analysis techniques for DRAMs 1. Defect localization and verification. 307-316 - Hei Wong:
Recent developments in silicon optoelectronic devices. 317-326 - Domenico Caputo, Fernanda Irrera:
Investigation and modeling of stressed thermal oxides. 327-333 - Fen Chen, Rolf-Peter Vollertsen, Baozhen Li, Dave Harmon, Wing L. Lai:
A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride-oxide dielectrics. 335-341 - Juin J. Liou, R. Shireen, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Antonio Cerdeira, Xiaofang Gao, Xuecheng Zou, Ching-Sung Ho:
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs. 343-347 - Yongseok Ahn, Sanghyun Lee, Gwanhyeob Koh, Taeyoung Chung, Kinam Kim:
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon. 349-354 - Yiqi Zhuang, Lei Du:
1/f noise as a reliability indicator for subsurface Zener diodes. 355-360 - Alina Caddemi, Nicola Donato:
Temperature-dependent noise characterization and modeling of on-wafer microwave transistors. 361-366 - De-Shin Liu, Chin-Yu Ni:
A thermo-mechanical study on the electrical resistance of aluminum wire conductors. 367-374 - T. Y. Lin, W. S. Leong, K. H. Chua, R. Oh, Y. Miao, J. S. Pan, J. W. Chai:
The impact of copper contamination on the quality of the second wire bonding process using X-ray photoelectron spectroscopy method. 375-380 - C. F. Luk, Y. C. Chan, K. C. Hung:
Development of gold to gold interconnection flip chip bonding for chip on suspension assemblies. 381-389 - Joachim Kloeser, Paradiso Coskina, Rolf Aschenbrenner, Herbert Reichl:
Bump formation for flip chip and CSP by solder paste printing. 391-398 - T. Alander, S. Nurmi, Pekka Heino, Eero Ristolainen:
Impact of component placement in solder joint reliability. 399-406 - J. D. Wu, S. H. Ho, C. Y. Huang, C. C. Liao, P. J. Zheng, S. C. Hung:
Board level reliability of a stacked CSP subjected to cyclic bending. 407-416 - Didier Cottet, Michael Scheffler, Gerhard Tröster:
A novel, zone based process monitoring method for low cost MCM-D substrates manufactured on large area panels. 417-426 - Pawel Grybos, Wladyslaw Dabrowski, Pawel Hottowy, Robert Szczygiel, Krzysztof Swientek, Piotr Wiacek:
Multichannel mixed-mode IC for digital readout of silicon strip detectors. 427-436 - Asad A. Ismaeel, R. Bhatnagar, Rajan Mathew:
On-line testable data path synthesis for minimizing testing time. 437-453 - S. Chakraborty, P. T. Lai, Paul C. K. Kwok:
MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC. 455-458 - F. Saigné, Olivier Quittard, Laurent Dusseau, F. Joffre, Coumar Oudéa, J. Fesquet, Jean Gasiot:
Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements. 459-461
Volume 42, Numbers 4-5, April - May 2002
- Ninoslav Stojadinovic, Michael G. Pecht:
Editorial. 463 - Hiroshi Iwai, Shun'ichiro Ohmi:
Silicon integrated circuit technology from past to future. 465-491 - Eiji Takeda, Eiichi Murakami, Kazuyoshi Torii, Yutaka Okuyama, Eishi Ebe, Kenji Hinode, Shin'ichiro Kimura:
Reliability issues of silicon LSIs facing 100-nm technology node. 493-506 - Gilbert De Mey:
A thermodynamic limit for digital electronics. 507-510 - S. Nakajima, S. Nakamura, K. Kuji, T. Ueki, T. Ajioka, T. Sakai:
Construction of a cost-effective failure analysis service network--microelectronic failure analysis service in Japan. 511-521 - Daniel M. Fleetwood:
Effects of hydrogen transport and reactions on microelectronics radiation response and reliability. 523-541 - Kinam Kim, Gitae Jeong, Chan-Woong Chun, Sam-Jin Hwang:
DRAM reliability. 543-553 - Ben Kaczer, Robin Degraeve, Mahmoud Rasras, An De Keersgieter, K. Van de Mieroop, Guido Groeseneken:
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. 555-564 - M. K. Radhakrishnan, Kin Leong Pey, C. H. Tung, W. H. Lin:
Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. 565-571 - Gérard Ghibaudo, T. Boutchacha:
Electrical noise and RTS fluctuations in advanced CMOS devices. 573-582 - Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Antonio Cerdeira, Magali Estrada, Y. Yue:
A review of recent MOSFET threshold voltage extraction methods. 583-596 - Hei Wong, V. A. Gritsenko:
Defects in silicon oxynitride gate dielectric films. 597-605 - Masazumi Amagai:
Mechanical reliability in electronic packaging. 607-627 - Vladimír Székely:
Enhancing reliability with thermal transient testing. 629-640 - Dawn A. Thomas, Ken Ayers, Michael G. Pecht:
The "trouble not identified" phenomenon in automotive electronics. 641-651 - Mauro Ciappa:
Selected failure mechanisms of modern power modules. 653-667 - Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Sima Dimitrijev:
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs. 669-677 - Mitsuo Fukuda:
Optical semiconductor device reliability. 679-683 - Gaudenzio Meneghesso, Enrico Zanoni:
Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors. 685-708 - Andrzej Dziedzic:
Electrical and structural investigations in reliability characterisation of modern passives and passive integrated components. 709-719 - Chun-Yen Chang, Jiong-Guang Su, Shyh-Chyi Wong, Tiao-Yuan Huang, Yuan-Chen Sun:
RF CMOS technology for MMIC. 721-733 - Arokia Nathan, Byung-kyu Park, Qinghua Ma, Andrei Sazonov, John A. Rowlands:
Amorphous silicon technology for large area digital X-ray and optical imaging. 735-746 - N. Tosic Golo, Fred G. Kuper, Ton J. Mouthaan:
Zapping thin film transistors. 747-765 - C. F. Luk, Y. C. Chan, K. C. Hung:
Application of adhesive bonding techniques in hard disk drive head assembly. 767-777 - B. K. Jones:
Logarithmic distributions in reliability analysis. 779-786 - Juin J. Liou, Qiang Zhang, John McMacken, J. Ross Thomson, Kevin Stiles, Paul Layman:
Statistical modeling of MOS devices for parametric yield prediction. 787-795 - V. S. Pershenkov, S. V. Avdeev, A. S. Tsimbalov, M. N. Levin, V. V. Belyakov, D. V. Ivashin, A. Y. Slesarev, A. Y. Bashin, Gennady I. Zebrev, Viktor N. Ulimov:
Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response. 797-804
Volume 42, Number 6, June 2002
- Wolfgang Wondrak:
Special Section on Reliability of Passive Components. 805 - Reiner W. Kuehl:
Reliability of thin-film resistors: impact of third harmonic screenings. 807-813 - Jonathan L. Paulsen, Erik K. Reed:
Highly accelerated lifetesting of base-metal-electrode ceramic chip capacitors. 815-820 - Erik K. Reed, Jonathan L. Paulsen:
Impact of circuit resistance on the breakdown voltage of tantalum chip capacitors. 821-827 - Jocelyn Siplon, Gary J. Ewell, Thomas Gibson:
ESR concerns in tantalum chip capacitors exposed to non-oxygen-containing environments. 829-834 - A. Dehbi, Wolfgang Wondrak, Yves Ousten, Yves Danto:
High temperature reliability testing of aluminum and tantalum electrolytic capacitors. 835-840 - Jan Pavelka, Josef Sikula, Petr Vasina, Vlasta Sedlakova, Munecazu Tacano, Sumihisa Hashiguchi:
Noise and transport characterisation of tantalum capacitors. 841-847 - Petr Vasina, T. Zednicek, Josef Sikula, Jan Pavelka:
Failure modes of tantalum capacitors made by different technologies. 849-854 - Gregory L. Amorese:
Minimizing equivalent series resistance measurement errors. 855-860 - Markus P. J. Mergens:
On-Chip ESD. 861 - Ming-Dou Ker, Chyh-Yih Chang:
ESD protection design for CMOS RF integrated circuits using polysilicon diodes. 863-872 - Cynthia A. Torres, James W. Miller, Michael Stockinger, Matthew D. Akers, Michael G. Khazhinsky, James C. Weldon:
Modular, portable, and easily simulated ESD protection networks for advanced CMOS technologies. 873-885 - Craig Salling, Jerry Hu, Jeff Wu, Charvaka Duvvury, Roger Cline, Rith Pok:
Development of substrate-pumped nMOS protection for a 0.13 mum technology. 887-899 - Bart Keppens, Vincent De Heyn, M. Natarajan Iyer, Vesselin K. Vassilev, Guido Groeseneken:
Significance of the failure criterion on transmission line pulse testing. 901-907 - Jon Barth, John Richner:
Correlation considerations: Real HBM to TLP and HBM testers. 909-917 - Leo G. Henry, Jon Barth, Hugh Hyatt, Tom Diep, Michael Stevens:
Charged device model metrology: limitations and problems. 919-927 - P. G. Han, Hei Wong, Andy H. P. Chan, M. C. Poon:
A novel approach for fabricating light-emitting porous polysilicon films. 929-933 - Enrique Miranda, Gabriel Redin, Adrián Faigón:
Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression. 935-941 - Thomas D. Moore, John L. Jarvis:
The effects of in-plane orthotropic properties in a multi-chip ball grid array assembly. 943-949 - Masazumi Amagai, Masako Watanabe, Masaki Omiya, Kikuo Kishimoto, Toshikazu Shibuya:
Mechanical characterization of Sn-Ag-based lead-free solders. 951-966 - Afaq Ahmad:
Investigation of a constant behavior of aliasing errors in signature analysis due to the use of different ordered test-patterns in LFSR based testing techniques. 967-974 - Tomasz Garbolino, Andrzej Hlawiczka:
Efficient test pattern generators based on specific cellular automata structures. 975-983 - Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan:
Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction. 985-989 - Lingfeng Mao, Changhua Tan, Mingzhen Xu:
Erratum to "The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures" [Microelectronics Reliability 2001;41: 927-931]. 991 - Ninoslav Stojadinovic:
Dependability of Engineering Systems: J.M. Nahman, Springer-Verlag, Berlin, Heidelberg, New York, 2002, 192 pages. 993
Volume 42, Number 7, July 2002
- Wallace T. Anderson, Roberto Menozzi:
Editorial. 995 - Phil F. Marsh, Colin S. Whelan, William E. Hoke, Robert E. Leoni III, Thomas E. Kazior:
Reliability of metamorphic HEMTs on GaAs substrates. 997-1002 - Frank Gao, Ravi Chanana, Tom Nicholls:
The effects of buffer thickness on GaAs MESFET characteristics: channel-substrate current, drain breakdown, and reliability. 1003-1010 - Tim Henderson:
Modeling gallium arsenide heterojunction bipolar transistor ledge variations for insight into device reliability. 1011-1020 - K. Ikossi, William S. Rabinovich, D. S. Katzer, Steven C. Binari, J. Mittereder, Peter G. Goetz:
Multiple quantum well PIN optoelectronic devices and a method of restoring failed device characteristics. 1021-1028 - William J. Roesch:
Methods of reducing defects in GaAs ICs. 1029-1036 - Hongxia Liu, Yue Hao, Jiangang Zhu:
A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs. 1037-1044 - P. M. Igic, P. A. Mawby, M. S. Towers, W. M. Jamal, S. G. J. Batcup:
Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model. 1045-1052 - Oliver Perat, Jean-Marie Dorkel, Emmanuel Scheid, Pierre Temple-Boyer, Y. S. Chung, A. Peyre-Lavigne, M. Zecri, Patrick Tounsi:
Characterization method of thermomechanical parameters for microelectronic materials. 1053-1058 - Marcin Janicki, Gilbert De Mey, Andrzej Napieralski:
Transient thermal analysis of multilayered structures using Green's functions. 1059-1064 - M. O. Alam, Yan Cheong Chan, K. C. Hung:
Reliability study of the electroless Ni-P layer against solder alloy. 1065-1073