"MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC."

S. Chakraborty, P. T. Lai, Paul C. K. Kwok (2002)

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DOI: 10.1016/S0026-2714(01)00220-7

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type: Journal Article

metadata version: 2024-10-06

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S. Chakraborty, P. T. Lai, Paul C. K. Kwok:
MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC. Microelectron. Reliab. 42(3): 455-458 (2002)

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