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"Electrical characteristics measurement of transistors by 4 tips-0.2 micron ..."

C. Giret et al. (2002)

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DOI: 10.1016/S0026-2714(02)00220-2

access: closed

type: Journal Article

metadata version: 2020-02-22

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C. Giret, D. Bru, D. Faure, C. Ali, M. Razani, D. Gobled:
Electrical characteristics measurement of transistors by 4 tips-0.2 micron probing technique in Semiconductor Failure Analysis. Microelectron. Reliab. 42(9-11): 1723-1727 (2002)

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