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ORCIDJoachim N. Burghartz
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- affiliation: University of Stuttgart, Germany
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2020 – today
- 2024
[j17]Alexander Frank
, Bart Kootte, Thorsten Göttsche, Peter Jutte, Jean Schleipen, Paul Dijkstra, Eckardt Bihler, Joachim N. Burghartz, Jens Anders:
A 97-Channel Read-Out ASIC for an Electrophysiological Mapping Catheter With an Optical Link. IEEE Trans. Biomed. Circuits Syst. 18(1): 76-88 (2024)- 2022
- [c21]Alexander Frank, Jens Anders, Joachim N. Burghartz, Bart Kootte, Jean Schleipen, Peter Jutte:
An Integrated Optical Transceiver Circuit for Power Delivery and Bi-directional Data Communication in a Medical Catheter Device. ESSCIRC 2022: 185-188 - [c20]Mamta Pradhan, Matthias Moser, Mohammed Alomari, Joachim N. Burghartz, Ingmar Kallfass:
Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure. ESSDERC 2022: 400-403 - [c19]Sefa Özbek, Shuo Wang, Serafin B. Fischer, Markus Grözing, Joachim N. Burghartz, Jan Hesselbarth, Manfred Berroth:
Integrating Ultra-thin SiGe BiCMOS Power Amplifier Chip in Combination with Flexible Antenna in the Polymer Foil. ISCAS 2022: 2052-2056 - 2021
- [c18]Alexander Frank, Bart Kootte, Thorsten Göttsche, Peter Jutte, Jean Schleipen, Vincent Henneken, Martin van der Mark, Eckardt Bihler, Paul Dijkstra, Jens Anders, Joachim N. Burghartz:
A 96-Channel Electrophysiology Catheter with Integrated Read-Out ASIC and Optical Link. EMBC 2021: 1336-1340 - [c17]Zili Yu, Cor Scherjon, Daniel Brosch, Udo Kraushaar, René von Metzen, Joachim N. Burghartz:
Front-End Electronics for Beta-Cell Function Monitoring with an Integrated FOPP Detector. IEEE SENSORS 2021: 1-4 - 2020
- [j16]Samar Elsaegh, Clemens Veit, Ute Zschieschang, Mohammad Amayreh, Florian Letzkus, Holger Sailer, Michael Jurisch, Joachim N. Burghartz, Uli Würfel, Hagen Klauk, Hans Zappe, Yiannos Manoli:
Low-Power Organic Light Sensor Array Based on Active-Matrix Common-Gate Transimpedance Amplifier on Foil for Imaging Applications. IEEE J. Solid State Circuits 55(9): 2553-2566 (2020)
2010 – 2019
- 2019
- [c16]Ann-Christin Köllner, Zili Yu, Michael Oehme, Jens Anders, Mathias Kaschel, Jörg Schulze, Joachim N. Burghartz:
A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector. IEEE SENSORS 2019: 1-4 - 2018
- [j15]Sefa Özbek, Golzar Alavi, Johannes Digel, Markus Grözing, Joachim N. Burghartz, Manfred Berroth:
3-Path SiGe BiCMOS power amplifier on thinned substrate for IoT applications. Integr. 63: 291-298 (2018) - [c15]Lars Heuken, Muhammad Alshahed, Alessandro Ottaviani, Mohammed Alomari, Joachim N. Burghartz, Ulrike Waizmann, Thomas Reindl:
Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates. ESSDERC 2018: 22-25 - 2017
- [c14]Muhammad Alshahed, M. Dakran, Lars Heuken, Mohammed Alomari, Joachim N. Burghartz:
Comprehensive compact electro-thermal GaN HEMT model. ESSDERC 2017: 196-199 - [c13]Mourad Elsobky, Björn Albrecht, Harald Richter, Joachim N. Burghartz, Pirmin Ganter, Katalin Szendrei, Bettina V. Lotsch:
Ultra-thin relative humidity sensors for hybrid system-in-foil applications. IEEE SENSORS 2017: 1-3 - [c12]Zili Yu, Cor Scherjon, Yigit Mahsereci, Joachim N. Burghartz:
A new CMOS stress sensor ratiometric readout for in-plane stress magnitude and angle detection. IEEE SENSORS 2017: 1-3 - 2016
- [j14]Yigit Mahsereci, Stefan Saller, Harald Richter, Joachim N. Burghartz:
An Ultra-Thin Flexible CMOS Stress Sensor Demonstrated on an Adaptive Robotic Gripper. IEEE J. Solid State Circuits 51(1): 273-280 (2016) - [c11]Muhammad Alshahed, Mohammed Alomari, Christine Harendt, Joachim N. Burghartz, C. Wachter, T. Bergunde, S. Lutgen:
600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates. ESSDERC 2016: 202-205 - 2015
- [j13]Yipin Zhang, Cor Scherjon, Joachim N. Burghartz:
Cost-Efficient Integration of Industrial Applications Using Smart Power Gate Arrays. IEEE Trans. Ind. Electron. 62(5): 2903-2911 (2015) - [c10]Yigit Mahsereci, Stefan Saller, Harald Richter, Joachim N. Burghartz:
16.1 An ultra-thin flexible CMOS stress sensor demonstrated on an adaptive robotic gripper. ISSCC 2015: 1-3 - 2014
- [c9]Ute Zschieschang, Reinhold Rodel, Ulrike Kraft, Kazuo Takimiya, Tarek Zaki, Florian Letzkus, Joerg Butschke, Harald Richter, Joachim N. Burghartz, Wei Xiong, Boris Murmann, Hagen Klauk:
Low-voltage organic transistors for flexible electronics. DATE 2014: 1-6 - [c8]Christine Harendt, Zili Yu, Joachim N. Burghartz, Jan Kostelnik, Andreas Kugler, Stefan Saller:
Hybrid Systems in foil (HySiF) exploiting ultra-thin flexible chips. ESSDERC 2014: 210-213 - [c7]Muhammad Alshahed, Zili Yu, Horst Rempp, Harald Richter, Christine Harendt, Joachim N. Burghartz:
Thermal characterization and modeling of ultra-thin silicon chips. ESSDERC 2014: 397-400 - 2012
- [j12]Tarek Zaki, Frederik Ante, Ute Zschieschang, Joerg Butschke, Florian Letzkus, Harald Richter, Hagen Klauk, Joachim N. Burghartz:
A 3.3 V 6-Bit 100 kS/s Current-Steering Digital-to-Analog Converter Using Organic P-Type Thin-Film Transistors on Glass. IEEE J. Solid State Circuits 47(1): 292-300 (2012) - [c6]Evangelos A. Angelopoulos, Muhammad S. Al-Shahed, Wolfgang Appel, Stefan Endler, Saleh Ferwana, Christine Harendt, Mahadi-Ul Hassan, Horst Rempp, Martin Zimmermann, Joachim N. Burghartz:
Manufacturing aspects of an ultra-thin chip technology. ESSDERC 2012: 141-144 - 2011
- [c5]Tarek Zaki, Frederik Ante, Ute Zschieschang, Joerg Butschke, Florian Letzkus, Harald Richter, Hagen Klauk, Joachim N. Burghartz:
A 3.3V 6b 100kS/s current-steering D/A converter using organic thin-film transistors on glass. ISSCC 2011: 324-325
2000 – 2009
- 2009
- [j11]Heinz-Gerd Graf, Christine Harendt, Thorsten Engelhardt, Cor Scherjon, Karsten Warkentin, Harald Richter, Joachim N. Burghartz:
High Dynamic Range CMOS Imager Technologies for Biomedical Applications. IEEE J. Solid State Circuits 44(1): 281-289 (2009) - [c4]Joachim N. Burghartz, Wolfgang Appel, Christine Harendt, Horst Rempp, Harald Richter, Martin Zimmermann:
Ultra-thin chips and related applications, a new paradigm in silicon technology. ESSCIRC 2009: 28-35 - [c3]Franz X. Hutter, Daniel Brosch, Heinz-Gerd Graf, Wolfram Klingler, Markus Strobel, Joachim N. Burghartz:
A 0.25µm logarithmic CMOS imager for emissivity-compensated thermography. ISSCC 2009: 354-355 - 2008
- [c2]Joachim N. Burghartz, Thorsten Engelhardt, Heinz-Gerd Graf, Christine Harendt, Harald Richter, Cor Scherjon, Karsten Warkentin:
CMOS Imager Technologies for Biomedical Applications. ISSCC 2008: 142-143 - [c1]Horst Rempp, Joachim N. Burghartz, Christine Harendt, Nicoleta Pricopi, Marcus Pritschow, Christian Reuter, Harald Richter, Inge Schindler, Martin Zimmermann:
Ultra-Thin Chips on Foil for Flexible Electronics. ISSCC 2008: 334-335 - 2005
- [j10]Joachim N. Burghartz:
Review of add-on process modules for high-frequency silicon technology. Microelectron. Reliab. 45(3-4): 409-418 (2005) - 2004
- [j9]Mark P. van der Heijden, Leo C. N. de Vreede, Joachim N. Burghartz:
On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match. IEEE J. Solid State Circuits 39(10): 1727-1736 (2004) - 2003
- [j8]Marco Spirito, Leo C. N. de Vreede, Lis K. Nanver, Stephan Weber, Joachim N. Burghartz:
Power amplifier PAE and ruggedness optimization by second-harmonic control. IEEE J. Solid State Circuits 38(9): 1575-1583 (2003) - 2002
- [j7]Alexander Polyakov, Marian Bartek, Joachim N. Burghartz:
Mechanical Reliability of Silicon Wafers with Through-Wafer Vias for Wafer-Level Packaging. Microelectron. Reliab. 42(9-11): 1783-1788 (2002) - 2001
- [j6]Joachim N. Burghartz:
Status and trends of silicon RF technology. Microelectron. Reliab. 41(1): 13-19 (2001)
1990 – 1999
- 1998
- [j5]Joachim N. Burghartz, Daniel C. Edelstein, Mehmet Soyuer, Herschel A. Ainspan, Keith A. Jenkins:
RF circuit design aspects of spiral inductors on silicon. IEEE J. Solid State Circuits 33(12): 2028-2034 (1998) - 1997
- [j4]Joachim N. Burghartz, Mehmet Soyuer, Keith A. Jenkins, Michael Kies, Margaret Dolan, Kenneth J. Stein, John Malinowski, David L. Harame:
Integrated RF components in a SiGe bipolar technology. IEEE J. Solid State Circuits 32(9): 1440-1445 (1997) - [j3]Mehmet Soyuer, Joachim N. Burghartz, Herschel A. Ainspan, Keith A. Jenkins, Peter Xiao, Arvin R. Shahani, Margaret S. Dolan, David L. Harame:
An 11 GHz 3-V SiGe voltage controlled oscillator with integrated resonator. IEEE J. Solid State Circuits 32(9): 1451-1454 (1997) - 1996
- [j2]Mehmet Soyuer, Keith A. Jenkins, Joachim N. Burghartz, Herschel A. Ainspan, Frank J. Canora, Slaila Ponnapalli, John F. Ewen, William E. Pence:
A 2.4-GHz silicon bipolar oscillator with integrated resonator. IEEE J. Solid State Circuits 31(2): 268-270 (1996) - [j1]Mehmet Soyuer, Keith A. Jenkins, Joachim N. Burghartz, Michael D. Hulvey:
A 3-V 4-GHz nMOS voltage-controlled oscillator with integrated resonator. IEEE J. Solid State Circuits 31(12): 2042-2045 (1996)
Coauthor Index
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