Microelectronics Reliability, Volumes 76-77

Volumes 76-77, September 2017

Editorial

• 
  Nathalie Labat, François Marc, Hélène Frémont, Marise Bafleur:
  Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis. 1-5

Tutorial

• 
  Kirsten Weide-Zaage:
  Simulation of packaging under harsh environment conditions (temperature, pressure, corrosion and radiation). 6-12

Key-note paper

• 
  Vincent Huard, Souhir Mhira, Florian Cacho, Alain Bravaix:
  Enabling robust automotive electronic components in advanced CMOS nodes. 13-24

Session A : Quality and Reliability assessment

• 
  Amir Sajjad Bahman, Francesco Iannuzzo, T. Holmgaard, R. Ø. Nielsen, Frede Blaabjerg:
  Reliability-oriented environmental thermal stress analysis of fuses in power electronics. 25-30
• 
  Ionut Vernica, Ke Ma, Frede Blaabjerg:
  Reliability assessment platform for the power semiconductor devices - Study case on 3-phase grid-connected inverter application. 31-37
• 
  Alexander Hirler, Josef Biba, Adnan Alsioufy, T. Lehndorff, Torsten Sulima, H. Lochner, U. Abelein, Walter Hansch:
  Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability. 38-41
• 
  Abdellatif Bey-Temsamani, S. Kauffmann, Y. Descas, Bart Vandevelde, Franco Zanon, Geert Willems:
  Improved and accurate physics-of-failure (PoF) methodology for qualification and lifetime assessment of electronic systems. 42-46
• 
  Dae-Hyun Kim, Linda Milor:
  Analysis of errors in estimating wearout characteristics of time-dependent dielectric breakdown using system-level accelerated life test. 47-52
• 
  Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche:
  Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs. 53-57
• 
  Qiutao Zhang, Sarah Azimi, Germano La Vaccara, Luca Sterpone, Boyang Du:
  A new approach for Total Ionizing Dose effect analysis on Flash-based FPGA. 58-63
• 
  Martin Versen, W. Ernst, Prince Gulati:
  A row hammer pattern analysis of DDR2 SDRAM. 64-67
• 
  Raphael Andreoni Camponogara Viera, Rodrigo Possamai Bastos, Jean-Max Dutertre, Philippe Maurine, Rodrigo Iga Jadue:
  Method for evaluation of transient-fault detection techniques. 68-74
• 
  Rafael O. Nunes, R. L. de Orio:
  Study of the impact of electromigration on integrated circuit performance and reliability at design level. 75-80
• 
  Kexin Yang, Taizhi Liu, Rui Zhang, Dae Hyun Kim, Linda Milor:
  Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits. 81-86
• 
  Rui Zhang, Taizhi Liu, Kexin Yang, Linda Milor:
  Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations. 87-91
• 
  R. Lajmi, Florian Cacho, Estelle Lauga-Larroze, Sylvain Bourdel, Ph. Benech, Vincent Huard, X. Federspiel:
  Characterization of Low Drop-Out during ageing and design for yield. 92-96
• 
  Dennis Helmut, Gerhard K. M. Wachutka, Gerhard Groos:
  Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP). 97-101

Poster session A

• 
  Peter Jacob, Roman Furrer:
  A very unusual transistor failure, caused by a solenoid. 102-105
• 
  Chinedu I. Ossai, Xuechu Xu, Qing Yang, Nagarajan Raghavan:
  Uncertainty quantification in nanowire growth modeling - A precursor to quality semiconductor nanomanufacturing. 106-111
• 
  Jae-Seong Jeong, Won-kyoung Lee, Chung-kuk Lee, Joongho Choi:
  Lifetime and failure analysis of perovskite-based ceramic NTC thermistors by thermal cycling and abrasion combined stress. 112-116
• 
  Hao Niu, Huai Wang, X. Ye, S. Wang, Frede Blaabjerg:
  Converter-level FEM simulation for lifetime prediction of an LED driver with improved thermal modelling. 117-122
• 
  Haoze Luo, Wuhua Li, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg:
  Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design. 123-130

Session B1 : Semiconductor Failure Mechanisms & Reliability: Defect analysis from device to product

• 
  Deniz Kocaay, Philippe Roussel, Kris Croes, Ivan Ciofi, Y. Saad, Ingrid De Wolf:
  LER and spacing variability on BEOL TDDB using E-field mapping: Impact of field acceleration. 131-135
• 
  Maurits J. de Jong, Cora Salm, Jurriaan Schmitz:
  Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs. 136-140
• 
  Changqing Chen, Ghim Boon Ang, Peng Tiong Ng, Francis Rivai, Soh Ping Neo, Dayanand Nagalingam, Kim Hong Yip, Jeffery Lam, Zhihong Mai:
  Application of Scanning Capacitance Microscopy on SOI device with wafer edge low yield pattern. 141-144
• 
  Vladimir Kolkovsky, Ronald Stübner, Jörg Weber:
  Carbon-related defects in microelectronics. 145-148
• 
  Rainer Duschl, Armin H. Fischer, Achim Gratz, Robert Wiesner:
  Static and dynamic hot carrier accelerated TDDB: Influencing factors and impact on product lifetime. 149-153

Session B2 : Semiconductor Failure Mechanisms & Reliability: Circuit reliability analysis

• 
  Luca Sterpone, Luca Boragno:
  A probe-based SEU detection method for SRAM-based FPGAs. 154-158
• 
  Thomas Rousselin, G. Hubert, Didier Regis, Marc Gatti, A. Bensoussan:
  Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies. 159-163
• 
  Seung Uk Han, Youngyoun Lee, Yongdoo Kim, Jemin Park, Junhee Lim, Satoru Yamada, Hyeongsun Hong, Kyupil Lee, Gyoyoung Jin, Eunseung Jung:
  The improvement of HEIP immunity using STI engineering at DRAM. 164-167
• 
  Mariem Slimani, K. Benkalaia, Lirida A. B. Naviner:
  Analysis of ageing effects on ARTIX7 XILINX FPGA. 168-173

Poster session B

• 
  Jianfei Wu, Cong Li, Hongyi Wang, J. Li, Liming Zheng:
  Modelling of initial fast charge loss mechanism for logic embedded non-volatile memories. 174-177
• 
  Alberto Rodriguez-Fernandez, Carlo Cagli, Luca Perniola, Jordi Suñé, Enrique Miranda:
  Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis. 178-183

Session C : Progress in Failure analysis: Defect Detection and Analysis

• 
  Christian Boit:
  Technologies for Heterogeneous Integration - Challenges and chances for fault isolation. 184-187
• 
  Kristof J. P. Jacobs, T. Wang, Michele Stucchi, Mario Gonzalez, Kris Croes, Ingrid De Wolf, Eric Beyne:
  Lock-in thermal laser stimulation for non-destructive failure localization in 3-D devices. 188-193
• 
  Mahyar Boostandoost, Dieter Gräfje, Florin Pop:
  Circuit simulation assisting Physical Fault Isolation for effective root cause analysis. 194-200
• 
  Etienne Auvray, Paul Armagnat, Luc Saury, Maheshwaran Jothi, Michael Brügel:
  Effective scan chain failure analysis method. 201-213
• 
  Oskar Amster, Fred Stanke, Stuart Friedman, Yongliang Yang, St. John B. Dixon-Warren, B. Drevniok:
  Practical quantitative scanning microwave impedance microscopy. 214-217
• 
  Sören Hommel, Nicole Killat, A. Altes, Thomas Schweinböck, Franz Kreupl:
  Determination of doping type by calibrated capacitance scanning microwave microscopy. 218-221
• 
  Ralf Heiderhoff, T. Haeger, K. Dawada, Thomas Riedl:
  From diffusive in-plane to ballistic out-of-plane heat transport in thin non-crystalline films. 222-226
• 
  Maxime Penzes, S. Dudit, Frederic Monsieur, Luca Silvestri, F. Nallet, D. Lewis, P. Perdu:
  Simulation of the thermal stress induced by CW 1340 nm laser on 28 nm advanced technologies. 227-232
• 
  Ivo Vogt, Tomonori Nakamura, Christian Boit:
  Optical interaction in active analog circuit elements. 233-237
• 
  Ahmad Khaled, Luka Kljucar, Sebastian Brand, Michael Kögel, Robert Aertgeerts, Ruben Nicasy, Ingrid De Wolf:
  Study of GHz-SAM sensitivity to delamination in BEOL layers. 238-242

Poster session C

• 
  N. Moultif, Eric Joubert, M. Masmoudi, Olivier Latry:
  Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures. 243-248
• 
  Anthony Boscaro, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak:
  Pattern image enhancement by automatic focus correction. 249-254
• 
  Soh Ping Neo, Alfred C. T. Quah, Ghim Boon Ang, Dayanand Nagalingam, Hnin Hnin Ma, Siong Luong Ting, C. W. Soo, Changqing Chen, Zhihong Mai, Jeffrey Lam:
  Failure analysis methodology on donut pattern failure due to photovoltaic electrochemical effect. 255-260
• 
  Changqing Chen, Ghim Boon Ang, Peng Tiong Ng, Francis Rivai, Hui Peng Ng, Alfred C. T. Quah, Angela Teo, Jeffery Lam, Zhihong Mai:
  Embed SRAM IDDOFF fail root cause identification by combination of device analysis and localized circuit analysis. 261-266

Session D1 : Reliability of SiC devices, from material to system

• 
  Bhagyalakshmi Kakarla, Selamnesh Nida, Johanna Mueting, Thomas Ziemann, Ivana Kovacevic-Badstuebner, Ulrike Grossner:
  Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs. 267-271
• 
  Lorenzo Ceccarelli, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg:
  A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis. 272-276
• 
  Paolo Cova, Attahir Murtala Aliyu, Alberto Castellazzi, Diego Chiozzi, Nicola Delmonte, P. Lasserre, N. Pignoloni:
  Thermal design and characterization of a modular integrated liquid cooled 1200 V-35 A SiC MOSFET bi-directional switch. 277-281

Session D2 : Reliability of millimeter wave and power devices

• 
  Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso:
  Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. 282-286
• 
  Wardhana A. Sasangka, Govindo J. Syaranamual, Y. Gao, Riko I. Made, Chee Lip Gan, Carl V. Thompson:
  Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation. 287-291
• 
  Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek:
  Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. 292-297
• 
  Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni:
  Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. 298-303

Session D3 : Reliability of high power GaN transistors

• 
  Florian Peter Pribahsnik, Michael Nelhiebel, M. Mataln, Mirko Bernardoni, G. Prechtl, Frank Altmann, David Poppitz, A. Lindemann:
  Exploring the thermal limit of GaN power devices under extreme overload conditions. 304-308
• 
  Wataru Saito, Toshiyuki Naka:
  Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs. 309-313
• 
  Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
  Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. 314-320
• 
  Thorsten Oeder, Alberto Castellazzi, Martin Pfost:
  Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. 321-326

Poster session D

• 
  Sang Min Kim, Min-Soo Kang, Won-Ju Cho, Jong Tae Park:
  Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer. 327-332
• 
  Hyun Jong Kim, Byung Sang Song, Won-Ju Cho, Jong Tae Park:
  Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors. 333-337
• 
  Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck:
  High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. 338-343
• 
  Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux:
  Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. 344-349
• 
  Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
  TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. 350-356

Session E : Interconnections and new failure modes

• 
  A. Betzwar Kotas, Golta Khatibi:
  Isothermal bending fatigue response of solder joints in high power semiconductor test structures. 357-361
• 
  Wissam Sabbah, Pierre Bondue, Oriol Avino-Salvado, Cyril Buttay, Hélène Frémont, Alexandrine Guédon-Gracia, Hervé Morel:
  High temperature ageing of microelectronics assemblies with SAC solder joints. 362-367
• 
  S. Pin, Hélène Frémont, Alexandrine Guédon-Gracia:
  Combined creep characterisation from single lap shear tests and 3D implementation for fatigue simulations. 368-372
• 
  Kristian Bonderup Pedersen, Dennis A. Nielsen, Bernhard Czerny, Golta Khatibi, Francesco Iannuzzo, Vladimir N. Popok, Kjeld Pedersen:
  Wire bond degradation under thermo- and pure mechanical loading. 373-377
• 
  Mads Brincker, S. Söhl, R. Eisele, Vladimir N. Popok:
  Strength and reliability of low temperature transient liquid phase bonded Cu-Sn-Cu interconnects. 378-382
• 
  Tobias Berthold, Guenther Benstetter, Werner Frammelsberger, Manuel Bogner, Rosana Rodríguez, Montserrat Nafría:
  Protective nanometer films for reliable Cu-Cu connections. 383-389
• 
  Glenn Ross, Vesa Vuorinen, Michael Krause, S. Reissaus, Matthias Petzold, Mervi Paulasto-Kröckel:
  XRD and ToF-SIMS study of intermetallic void formation in Cu-Sn micro-connects. 390-394
• 
  Peter Jacob, Uwe Thiemann:
  New ESD challenges in RFID manufacturing. 395-399
• 
  Ilyas Dchar, Cyril Buttay, Hervé Morel:
  SiC power devices packaging with a short-circuit failure mode capability. 400-404

Poster session E

• 
  Toshitaka Ishizaki, D. Miura, A. Kuno, K. Hasegawa, Masanori Usui, Y. Yamada:
  Young's modulus of a sintered Cu joint and its influence on thermal stress. 405-408
• 
  S. Kremp, O. Schilling:
  Realistic climatic profiles and their effect on condensation in encapsulated test structures representing power modules. 409-414
• 
  Haoze Luo, Nick Baker, Francesco Iannuzzo, Frede Blaabjerg:
  Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules. 415-419
• 
  Min-Su Kim, Hiroshi Nishikawa:
  Influence of ENIG defects on shear strength of pressureless Ag nanoparticle sintered joint under isothermal aging. 420-425
• 
  Rik J. Otte, Rob F. Fonville, Martin D. Knotter:
  Identification of foreign particles in packages of failed products by application of our modified failure analysis flow. 426-430
• 
  Maxime Barrière, Alexandrine Guédon-Gracia, Eric Woirgard, Serge Bontemps, François Le Henaff:
  Innovative conception of SiC MOSFET-Schottky 3D power inverter module with double side cooling and stacking using silver sintering. 431-437

Session F1 : Power Devices Reliability and Failure analysis : Interconnection reliability

• 
  Riccardo Enrici Vaion, Matteo Medda, Alberto Mancaleoni, Giovanna Mura, A. Pintus, M. De Tomasi:
  Qualification extension of automotive smart power and digital ICs to harsh aerospace mission profiles: Gaps and opportunities. 438-443
• 
  Wissam Sabbah, Faical Arabi, Oriol Avino-Salvado, Cyril Buttay, L. Théolier, Hervé Morel:
  Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling. 444-449
• 
  A. Middendorf, A. Grams, S. Janzen, Klaus-Dieter Lang, Olaf Wittler:
  Laser cuts increase the reliability of heavy-wire bonds and enable on-line process control using thermography. 450-454
• 
  D. Feil, T. Herberholz, M. Guyenot, Mathias Nowottnick:
  Highly variable Sn-Cu diffusion soldering process for high performance power electronics. 455-459
• 
  Franc Dugal, Mauro Ciappa:
  Reliability investigation of the copper-zinc system for solid diffusion bonding in power modules. 460-464

Session F2 : Power Devices Reliability and Failure analysis : Model and simulation

• 
  Seiya Abe, Kazunori Hasegawa, Masanori Tsukuda, Keiji Wada, Ichiro Omura, Tamotsu Ninomiya:
  Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications. 465-469
• 
  Jose Angel Ortiz Gonzalez, Olayiwola Alatise:
  Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs. 470-474
• 
  Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna:
  Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. 475-479
• 
  M. Junghaenel, Uwe Scheuermann:
  Impact of load pulse duration on power cycling lifetime of chip interconnection solder joints. 480-484
• 
  Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Frede Blaabjerg:
  Capacitive effects in IGBTs limiting their reliability under short circuit. 485-489

Session F3 : Power Devices and Modules: Reliability and Failure analysis

• 
  Akihiko Watanabe, R. Nagao, Ichiro Omura:
  Real-time imaging of temperature distribution inside a power device under a power cycling test. 490-494
• 
  Silvan Geissmann, L. De Michielis, Chiara Corvasce, Munaf Rahimo, M. Andenna:
  Extraction of dynamic avalanche during IGBT turn off. 495-499
• 
  F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud:
  Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. 500-506
• 
  R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros:
  Mechanisms of power module source metal degradation during electro-thermal aging. 507-511
• 
  Matthias Ritter, Martin Pfost:
  Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress. 512-516

Poster session F

• 
  Masanori Tsukuda, K. Nakashima, S. Tabata, Kazunori Hasegawa, Ichiro Omura:
  Clamp type built-in current sensor using PCB in high-voltage power modules. 517-521
• 
  Ui-Min Choi, Frede Blaabjerg, Francesco Iannuzzo:
  Advanced power cycler with intelligent monitoring strategy of IGBT module under test. 522-526
• 
  Safa Mbarek, Pascal Dherbécourt, Olivier Latry, François Fouquet:
  Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET. 527-531
• 
  F. Boige, Frédéric Richardeau:
  Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation. 532-538
• 
  Sungyoung Song, Stig Munk-Nielsen, Christian Uhrenfeldt:
  Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test. 539-543
• 
  Philippe Pougnet, Gerard Coquery, Richard Lallemand, A. Makhloufi:
  Power module thermal cycling tester for in-situ ageing detection. 544-548

28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Poster session F

• 
  G. Zhang, Dao Zhou, Jian Yang, Frede Blaabjerg:
  Fundamental-frequency and load-varying thermal cycles effects on lifetime estimation of DFIG power converter. 549-555

Session G : Photonics Reliability

• 
  N. Renso, Matteo Meneghini, Matteo Buffolo, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni:
  Understanding the degradation processes of GaN based LEDs submitted to extremely high current density. 556-560
• 
  Riko I. Made, Yu Gao, Govindo J. Syaranamual, Wardhana A. Sasangka, L. Zhang, Xuan Sang Nguyen, Y. Y. Tay, Jason Scott Herrin, Carl V. Thompson, Chee Lip Gan:
  Characterisation of defects generated during constant current InGaN-on-silicon LED operation. 561-565
• 
  Andreas Zibold, Maximilian Dammann, Ralf Schmidt, Helmer Konstanzer, Michael Kunzer:
  Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects. 566-570
• 
  Jia Lu, Zhennian Cao, ChuangJun Huang, Kunhui Xiao, Alan Street, YuFeng Dai:
  Failure analysis of projected capacitance touch panel liquid crystal displays - Two case studies. 571-574
• 
  Carlo De Santi, Matteo Meneghini, Alessandro Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso:
  Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. 575-578
• 
  Massimo Vanzi, Giulia Marcello, Giovanna Mura, G. Le Galès, S. Joly, Yannick Deshayes, Laurent Béchou:
  Practical optical gain by an extended Hakki-Paoli method. 579-583
• 
  Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Agata Bojarska, Piotr Perlin:
  Long-term degradation of InGaN-based laser diodes: Role of defects. 584-587
• 
  Jorge Souto, José Luis Pura, Alfredo Torres, Juan Ignacio Jiménez López:
  Thermomechanical degradation of single and multiple quantum well AlGaAs/GaAs laser diodes. 588-591

Poster session G

• 
  Chuntaek Park, Ilgu Yun:
  Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation. 592-595
• 
  Wonwook Oh, Soo Hyun Bae, Sung-Il Chan, Hae-Seok Lee, Donghwan Kim, Nochang Park:
  Field degradation prediction of potential induced degradation of the crystalline silicon photovoltaic modules based on accelerated test and climatic data. 596-600
• 
  Julien Magnien, Lisa Mitterhuber, Jördis Rosc, Franz Schrank, Stefan Hörth, Lena Goullon, Matthias Hutter, Stefan Defregger, Elke Kraker:
  Reliability and failure analysis of solder joints in flip chip LEDs via thermal impedance characterisation. 601-605
• 
  Sang Myung Lee, Ilgu Yun:
  Effect of selectively passivated layer on foldable low temperature polycrystalline silicon thin film transistor characteristics under dynamic mechanical stress. 606-609
• 
  Dongseok Shin, Byungchoul Park, Youngcheol Chae, Ilgu Yun:
  Structure variation effects on device reliability of single photon avalanche diodes. 610-613

Session H : MEMS reliability

• 
  Matroni Koutsoureli, George Stavrinidis, Dimitrios Birmpiliotis, George Konstantinidis, George J. Papaioannou:
  Electrical properties of SiN_x films with embedded CNTs for MEMS capacitive switches. 614-618
• 
  Pham Luu Trung Duong, Trong Toan Tran, Nagarajan Raghavan:
  Application of multiplicative dimensional reduction method for uncertainty quantification and sensitivity analysis of MEMS electrostatic actuators. 619-625
• 
  M. Silvestrini, Marco Barbato, Sonia Costantini, L. Castoldi, Federico Vercesi, Luigi Zanotti, Gaudenzio Meneghesso:
  Long-term stresses on linear micromirrors for pico projector application. 626-630
• 
  Matroni Koutsoureli, N. Siannas, George J. Papaioannou:
  Temperature accelerated discharging processes through the bulk of PECVD silicon nitride films for MEMS capacitive switches. 631-634

Poster session H

• 
  Chenna Reddy Bheesayagari, Sergi Gorreta, Joan Pons-Nin, Manuel Domínguez Pumar:
  Second order sigma-delta control of charge trapping for MOS capacitors. 635-639

Session I1 and I2 : Extreme environments: Ionising radiation

• 
  Lucas A. Tambara, Eduardo Chielle, Fernanda Lima Kastensmidt, Georgios Tsiligiannis, Salvatore Danzeca, Markus Brugger, A. Masi:
  Analyzing the impact of radiation-induced failures in flash-based APSoC with and without fault tolerance techniques at CERN environment. 640-643
• 
  Frederic Wrobel, Antoine D. Touboul, Vincent Pouget, Luigi Dilillo, Jerome Boch, Frédéric Saigné:
  A calculation method to estimate single event upset cross section. 644-649
• 
  Vincent Pouget, S. Jonathas, R. Job, J.-R. Vaillé, Frederic Wrobel, Frédéric Saigné:
  Structural pattern extraction from asynchronous two-photon laser fault injection using spectral analysis. 650-654
• 
  Walter E. Calienes Bartra, Y. Q. de Aguiar, Cristina Meinhardt, Andrei Vladimirescu, Ricardo Augusto da Luz Reis:
  Evaluation of heavy-ion impact in bulk and FDSOI devices under ZTC condition. 655-659
• 
  Y. Q. de Aguiar, Laurent Artola, Guillaume Hubert, Cristina Meinhardt, Fernanda Lima Kastensmidt, Ricardo Augusto da Luz Reis:
  Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology. 660-664
• 
  Marcio Gonçalves, Mateus Saquetti, Fernanda Lima Kastensmidt, José Rodrigo Azambuja:
  A low-level software-based fault tolerance approach to detect SEUs in GPUs' register files. 665-669

Session I3 : Extreme environments: EMC/ESD/Electrical fast transient

• 
  Pierre Payet, M. Guery, Jérémy Raoult, Laurent Chusseau:
  Out-of-band disturbance of mm-wave EMI on RF front-ends. 670-673
• 
  S. Hairoud-Airieau, Geneviève Duchamp, Tristan Dubois, Jean-Yves Delétage, André Durier, Hélène Frémont:
  Effects of ageing on the conducted immunity of a voltage reference: Experimental study and modelling approach. 674-679
• 
  Philippe Galy, Wim Schoenmaker:
  Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology. 680-684
• 
  Frédéric Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur:
  Prediction of LIN communication robustness against EFT events using dedicated failure models. 685-691
• 
  Mouna Mahane, David Trémouilles, Marise Bafleur, Benjamin Thon, Marianne Diatta, Lionel Jaouen:
  New triggering-speed-characterization method for diode-triggered SCR using TLP. 692-697
• 
  Clément Fleury, Guido Notermans, Hans-Martin Ritter, Dionyz Pogany:
  TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs. 698-702

Poster session I

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  V. S. Pershenkov, Aleksandr S. Petrov, Alexander S. Bakerenkov, Viktor N. Ulimov, V. A. Felytsyn, A. S. Rodin, V. V. Belyakov, V. A. Telets, V. V. Shurenkov:
  True dose rate physical mechanism of ELDRS effect in bipolar devices. 703-707
• 
  Jianfei Wu, Binhong Li, W. Zhu, H. Wang, L. Zheng:
  Investigations on the EFT immunity of microcontrollers with different architectures. 708-713
• 
  B. Li, Jianfei Wu, J. Gao, Y. Kuang, Jiancheng Li, X. Zhao, K. Zhao, Z. Han, J. Luo:
  The total ionizing dose response of a DSOI 4Kb SRAM. 714-718
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  Daniela Munteanu, Jean-Luc Autran, Soilihi Moindjie:
  Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation. 719-724