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"TCAD simulation capabilities towards gate leakage current analysis of ..."

Kalparupa Mukherjee et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.07.049

access: closed

type: Journal Article

metadata version: 2021-05-07

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Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectron. Reliab. 76-77: 350-356 (2017)

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