Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Field- and current-driven degradation of GaN-based power HEMTs with p-GaN ..."

Isabella Rossetto et al. (2017)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2017.06.061

access: open

type: Journal Article

metadata version: 2024-05-07

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/mr/RossettoMCBSPDT17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/RossettoMCBSPDT17
Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni:
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. 76-77: 298-303 (2017)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.