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"Field and hot electron-induced degradation in GaN-based power MIS-HEMTs."

Alaleh Tajalli et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.06.021

access: closed

type: Journal Article

metadata version: 2024-05-07

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  - https://dblp.org/rec/journals/mr/TajalliMRMBZM17
Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso:
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectron. Reliab. 76-77: 282-286 (2017)

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