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"High resolution physical analysis of ohmic contact formation at GaN-HEMT ..."

Andreas Graff et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.06.031

access: closed

type: Journal Article

metadata version: 2024-05-07

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  - https://dblp.org/rec/journals/mr/GraffSAKGHJBGB17
Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck:
High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. Microelectron. Reliab. 76-77: 338-343 (2017)

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