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Geert Van den Bosch
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2020 – today
- 2023
- [c6]Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt:
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW 2023: 1-4 - 2022
- [c5]Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, M. N. K. Alam, Jan Van Houdt:
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS 2022: 4 - [c4]Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, M. Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt:
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS 2022: 12-1 - 2021
- [c3]Anastasiia Kruv, Sean R. C. McMitchell, Sergiu Clima, Oguzhan O. Okudur, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt:
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. IRPS 2021: 1-6 - [c2]Davide Tierno, Kristof Croes, Arjun Ajaykumar, Siva Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
Reliability of Mo as Word Line Metal in 3D NAND. IRPS 2021: 1-6
2010 – 2019
- 2019
- [c1]Anastasiia Kruv, Antonio Arreghini, Mario Gonzalez, Devin Verreck, Geert Van den Bosch, Ingrid De Wolf, Arnaud Furnémont:
Impact of Mechanical Stress on the Electrical Performance of 3D NAND. IRPS 2019: 1-5 - 2014
- [j4]Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt:
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. Microelectron. Reliab. 54(9-10): 1697-1701 (2014) - [j3]Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang, Jan Van Houdt:
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations. Microelectron. Reliab. 54(9-10): 2258-2261 (2014)
2000 – 2009
- 2008
- [j2]Peter Moens, Geert Van den Bosch:
Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS. Microelectron. Reliab. 48(8-9): 1300-1305 (2008) - 2004
- [j1]Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot:
Evidence for source side injection hot carrier effects on lateral DMOS transistors. Microelectron. Reliab. 44(9-11): 1621-1624 (2004)
Coauthor Index
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