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ORCIDIRPS 2015: Monterey, CA, USA
- IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. IEEE 2015, ISBN 978-1-4673-7362-3
- Kris Croes, Deniz Kocaay, Ivan Ciofi, Jürgen Bömmels, Zsolt Tokei:
Impact of process variability on BEOL TDDB lifetime model assessment. 5 - Adrian Evans, Dan Alexandrescu, Veronique Ferlet-Cavrois, Kay-Obbe Voss:
Techniques for heavy ion microbeam analysis of FPGA SER sensitivty. 6 - Li Chieh Hsu, Yu-Min Lin, Chien Liang Wu, Wei Kun Lee, Yen Chun Liu, Cheng Pu Chiu, Hsin Kuo Hsu, Chun Yi Wang, Chien Chung Huang, Chin Fu Lin:
Effects of copper CMP and post clean process on VRDB and TDDB at 28nm and advanced technology node. 3 - Fen Chen, Carole Graas, Michael A. Shinosky, Chad Burke, Kai D. Feng, Craig Bocash, Ramachandran Muralidhar:
A method for rapid screening of various low-k TDDB models. 3 - Taiki Uemura, Takashi Kato, Hideya Matsuyama, Masanori Hashimoto
:
Impact of package on neutron induced single event upset in 20 nm SRAM. 9 - Miaomiao Wang, Zuoguang Liu, Tenko Yamashita, James H. Stathis, Chia-Yu Chen:
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET. 4 - Md. Enamul Kabir, Dave Young, Bahattin Kilic, Ioan Sauciuc, Carl Sapp, Gerald S. Leatherman:
Package induced stress impact on transistor performance for ultra-thin SoC. 5 - Ketul B. Sutaria, Pengpeng Ren, Abinash Mohanty, Xixiang Feng, Runsheng Wang, Ru Huang, Yu Cao:
Duty cycle shift under static/dynamic aging in 28nm HK-MG technology. 7 - G. Sereni, Luca Vandelli, Roberto Cavicchioli, Luca Larcher, Dmitry Veksler, Gennadi Bersuker:
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs. 2 - Fen Chen, Erik McCullen, Cathryn Christiansen, Michael A. Shinosky, Roger Dufresne, Prakash Periasamy, Rick Kontra, Carole Graas, Gary StOnge:
Diagnostic electromigration reliability evaluation with a local sensing structure. 2 - N. Tam, Bharat L. Bhuva, Lloyd W. Massengill, D. Ball, Michael W. McCurdy, Michael L. Alles, Indranil Chatterjee:
Multi-cell soft errors at the 16-nm FinFET technology node. 4 - Robert M. Shelby, Geoffrey W. Burr, Irem Boybat, Carmelo di Nolfo:
Non-volatile memory as hardware synapse in neuromorphic computing: A first look at reliability issues. 6 - Bruce M. Paine, Vincent T. Ng, Steve R. Polmanter, Neil T. Kubota, Carl R. Ignacio:
Degradation rate for surface pitting in GaN HEMT. 1 - Gilles Gasiot, Dimitri Soussan, Jean-Luc Autran, Victor Malherbe, Philippe Roche:
Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs. 2 - Hussam Amrouch, Javier Martín-Martínez, Victor M. van Santen, Miquel Moras, Rosana Rodríguez, Montserrat Nafría, Jörg Henkel:
Connecting the physical and application level towards grasping aging effects. 3 - Hai Jiang, Longxiang Yin, Yun Li, Nuo Xu, Kai Zhao, Yandong He, Gang Du, Xiaoyan Liu, Xing Zhang:
Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs. 6 - Tian Shen, Wenyi Zhang, Kong Boon Yeap, Jing Tan, Walter Yao, Patrick Justison:
An investigation of dielectric thickness scaling on BEOL TDDB. 3 - Chandrasekharan Kothandaraman, X. Chen, Dan Moy, D. Lea, Sami Rosenblatt, Faraz Khan, Derek Leu, Toshiaki Kirihata, D. Ioannou, G. La Rosa, J. B. Johnson, Norman Robson, Subramanian S. Iyer:
Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications. 2 - Christine S. Hau-Riege, You-Wen Yau, Kevin Caffey, Rajneesh Kumar, YangYang Sun, Andy Bao, Milind Shah, Lily Zhao, Omar Bchir, Ahmer Syed, Steve Bezuk:
The electromigration behavior of copper pillars for different current directions and pillar shapes. 5 - Jian-Hsing Lee, Manjunatha Prabhu, Konstantin Korablev, Jagar Singh, Mahadeva Iyer Natarajan, Shesh Mani Pandey:
Methodology to achieve planar technology-like ESD performance in FINFET process. 3 - Kaizad Mistry:
Keynote Address 1: "Transistors and reliability in the innovation era". 1 - Sukeshwar Kannan, Rahul Agarwal, Arnaud Bousquet, Geetha Aluri, Hui-Shan Chang:
Device performance analysis on 20nm technology thin wafers in a 3D package. 4 - Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Thomas Mueller, Max C. Lemme, Tibor Grasser:
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. 2 - David Huitink, Alan Lucero:
Semi-empirical stress/energy-based acceleration of temperature cycling failure. 5 - Hiroko Mori, Taiki Uemura, Hideya Matsuyama, Shin-ichiro Abe, Yukinobu Watanabe:
Critical charge dependence of correlation of different neutron sources for soft error testing. 2 - Mukta G. Farooq, G. La Rosa, Fen Chen, Prakash Periasamy, Troy L. Graves-abe, Chandrasekharan Kothandaraman, C. Collins, W. Landers, J. Oakley, J. Liu, John Safran, S. Ghosh, S. Mittl, D. Ioannou, Carole Graas, Daniel Berger, Subramanian S. Iyer:
Impact of 3D copper TSV integration on 32SOI FEOL and BEOL reliability. 4 - Brent Keeth:
Keynote Address 2: "Hybrid memory cube: Achieving high performance and high reliability". 1 - Alex Guo, Jesús A. del Alamo:
Positive-bias temperature instability (PBTI) of GaN MOSFETs. 6 - Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo:
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. 1 - Saroj Satapathy, Won Ho Choi, Xiaofei Wang, Chris H. Kim:
A revolving reference odometer circuit for BTI-induced frequency fluctuation measurements under fast DVFS transients. 6 - Steven W. Mittl, Fernando Guarin:
Self-heating and its implications on hot carrier reliability evaluations. 4 - Gregor Pobegen, Andreas Krassnig:
Instabilities of SiC MOSFETs during use conditions and following bias temperature stress. 6 - Wei Wu, Norbert Seifert:
MBU-Calc: A compact model for Multi-Bit Upset (MBU) SER estimation. 2 - Kashi Vishwanath Machani, Holm Geisler, Dirk Breuer, Frank Kuechenmeister, Jens Paul:
Mechanical reliability assessment of 28nm Back End of Line (BEoL) stack using finite element analysis and validation. 1 - Emily Ray, Barry P. Linder, Raphael Robertazzi, Kevin Stawiasz, Alan J. Weger, Emmanuel Yashchin, James H. Stathis, Peilin Song:
Analyzing path delays for accelerated testing of logic chips. 6 - Wardhana A. Sasangka, Govindo J. Syaranamual, Chee Lip Gan, Carl V. Thompson:
Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. 6 - Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. 2 - Ryo Kishida, Azusa Oshima, Kazutoshi Kobayashi:
Negative bias temperature instability caused by plasma induced damage in 65 nm bulk and Silicon on thin BOX (SOTB) processes. 2 - Ankur Aggarwal, Kabir Enamul, David Huitink, Nipun Sinha, Emre Armagan, Keqin Cao:
Coupled accelerated stress tests for comprehensive field reliability - Synergistic effects of moisture and temperature cycling. 6 - Nilesh Goel, Tejas Naphade, Souvik Mahapatra:
Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress. 4 - Norbert Seifert, Shah M. Jahinuzzaman, Jyothi Velamala, Nikunj Patel:
Susceptibility of planar and 3D tri-gate technologies to muon-induced single event upsets. 2 - Yu-Chien Chiu, Chun-Yen Chang, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Min-Hung Lee:
Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms. 3 - Sheng-Fu Hsu, Jer-Yuan Jao:
A novel 8kV on-chip surge protection design in xDSL line driver IC. 3 - Jongwoo Park, Miji Lee, Hanbyul Kang, Wooram Ko, Eunkyeong Choi, Junsik Im, Minwoo Lee, Dohwan Chung, Jinchul Park, Sangchul Shin, Sangwoo Pae:
Effects of front-end-of line process variations and defects on retention failure of flash memory: Charge loss/gain mechanism. 2 - Toshihide Kikkawa, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Yoshimori Asai, YiFeng Wu, Likun Shen, Kurt Smith, Dixie Dunn, Saurabh Chowdhury, Peter Smith, John Gritters, Lee McCarthy, Ronald Barr, Rakesh Lal, Umesh K. Mishra, Primit Parikh:
Commercialization and reliability of 600 V GaN power switches. 6 - M. N. Chang, Y.-H. Lee, S. Y. Lee, C. C. Chiu, D. Maji, K. Wu:
An investigation of capacitance aging model for extreme low-k and high-k dielectrics. 3 - Amr Haggag, Nik Sumikawa, Aamer Shaukat, J. K. Jerry Lee, Nick Aghel, Charlie Slayman:
Mitigating "No trouble found" component returns. 3 - E. Suhir, A. Bensoussan, Golta Khatibi, Johann Nicolics:
Probabilistic design for reliability in electronics and photonics: Role, significance, attributes, challenges. 5 - David Burnett, Sriram Balasubramanian, Vivek Joshi, Sanjay Parihar, Jack M. Higman, C. Weintraub:
SRAM Vmax stability considerations. 6 - Jongwoo Park, Miji Lee, Kyunghwan Min, J.-K. Choi, Changkyu Joo, S.-C. Park, Hanbyul Kang, Sangwoo Pae:
Reliability of fine pitch COF: Influence of surface morphology and CuSn intermetallic compound formation. 4 - Kong Boon Yeap, Tian Shen, Galor Wenyi Zhang, Sing Fui Yap, Brian Holt, Arfa Gondal, Seungman Choi, San Leong Liew, Walter Yao, Patrick Justison:
Impact of electrode surface modulation on time-dependent dielectric breakdown. 2 - Hyunsuk Chun, In Hak Baick, Sangsu Ha, Eunmi Kwon, Seungbae Lee, Seil Kim, Sangwoo Pae, Jongwoo Park:
CPI reliability and EMI benefit for MIM CAP embedded C4 package. 5 - L. D. Chen, B. L. Lin, M.-H. Hsieh, C. W. Chang, J. S. Tsai, J. C. Peng, C. C. Chiu, Y.-H. Lee:
Study of a new electromigration failure mechanism by novel test structure. 2 - Umberto Celano, Ludovic Goux, Attilio Belmonte, Karl Opsomer, Christophe Detavernier, Malgorzata Jurczak, Wilfried Vandervorst:
Conductive filaments multiplicity as a variability factor in CBRAM. 11 - Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs:
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. 6 - William J. Song, Saibal Mukhopadhyay, Sudhakar Yalamanchili:
Managing performance-reliability tradeoffs in multicore processors. 3 - Stefano Ambrogio, Simone Balatti, Zhongqiang Wang, Yu-Sheng Chen, Heng-Yuan Lee, Frederick T. Chen, Daniele Ielmini:
Data retention statistics and modelling in HfO2 resistive switching memories. 7 - Xiaoyu Tang, J. Lu, Rui Zhang, Yi Zhao, Wangran Wu, Chang Liu, Yi Shi, Ziqian Huang, Yuechan Kong:
PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding. 7 - Phil Oldiges, Kenneth P. Rodbell, Michael S. Gordon, John G. Massey, Kevin Stawiasz, Conal E. Murray, Henry H. K. Tang, K. Kim, K. Paul Muller:
SOI FinFET soft error upset susceptibility and analysis. 4 - Victor Malherbe, Gilles Gasiot, Dimitri Soussan, Aurelien Patris, Jean-Luc Autran, Philippe Roche:
Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis. 11 - T.-Y. Yew, Y.-C. Huang, M.-H. Hsieh, W. Wang, Y.-H. Lee:
The impact of inverter-like transitions on device TDDB and ring oscillators. 1 - P. Mora, X. Federspiel, Florian Cacho, Vincent Huard, Wafa Arfaoui:
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation. 6 - Raphael Robertazzi, Kanak Agarwal, Bucknell Webb, Christy Tyberg:
TSV/FET proximity study using dense addressable transistor arrays. 3 - Thierry Kociniewski, Zoubir Khatir:
Mechanical and thermal stresses characterization maps on cross-sections of forward biased electronic power devices. 2 - Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean:
Origins and implications of increased channel hot carrier variability in nFinFETs. 3 - Ghadeer Antanius, Rutvi Trivedi, Robert Kwasnick:
Platform qualification methodology: Face recognition. 3 - Andrea Bahgat Shehata, Alan J. Weger, Franco Stellari, Peilin Song, Hervé Deslandes, Ted R. Lundquist, Euan Ramsay:
Time-integrated photon emission as a function of temperature in 32 nm CMOS. 2 - A. Benoist, S. Denorme, X. Federspiel, Bruno Allard, Philippe Candelier:
Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology. 3 - Balaji Narasimham, Jung K. Wang, Narayana Vedula, Saket Gupta, Brandon Bartz, Carl Monzel, Indranil Chatterjee, Bharat L. Bhuva, Ronald D. Schrimpf, Robert A. Reed:
Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs. 2 - Shou-Chung Lee, A. S. Oates:
On the voltage dependence of copper/low-k dielectric breakdown. 3 - C. W. Chang, S. E. Liu, B. L. Lin, C. C. Chiu, Y.-H. Lee, K. Wu:
Thermal behavior of self-heating effect in FinFET devices acting on back-end interconnects. 2 - Peng Wu, Chenyue Ma, Lining Zhang, Xinnan Lin, Mansun Chan:
Investigation of nitrogen enhanced NBTI effect using the universal prediction model. 5 - Olivier Héron, Chiara Sandionigi, E. Piriou, Safa Mbarek, Vincent Huard:
Workload-dependent BTI analysis in a processor core at high level. 6 - Rolf-Peter Vollertsen, Georg Georgakos, K. Kölpin, C. Olk:
A fWLR test structure and method for device reliability monitoring using product relevant circuits. 3 - Joke De Messemaeker, O. Varela Pedreira, A. Moussa, Nabi Nabiollahi, Kris Vanstreels, Stefaan Van Huylenbroeck, Harold Philipsen, Patrick Verdonck, Bart Vandevelde, Ingrid De Wolf, Eric Beyne, Kris Croes:
Impact of oxide liner properties on TSV Cu pumping and TSV stress. 4 - G. Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu:
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. 2 - Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken:
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. 2 - J. W. McPherson:
Understanding the underlying degradation physics for proper time-to-failure distribution selection. 1 - Ankush Chaudhary, Ben Kaczer, Philippe J. Roussel, Thomas Chiarella, Naoto Horiguchi, Souvik Mahapatra:
Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI. 3 - Mark A. Anders, Patrick M. Lenahan, Aivars J. Lelis:
Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC. 3 - Georg Tempel:
CpK approach for the qualification of ECC-designs with single bit failures. 6 - S. Souiki-Figuigui, Veronique Sousa, Gérard Ghibaudo, Gabriele Navarro, M. Coue, Luca Perniola, P. Zuliani, R. Annunziata:
Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements. 1 - Andrea Cester, Nicola Wrachien, Massimiliano Bon, Gaudenzio Meneghesso, Roberta Bertani, Roberto Tagliaferro, Simone Casolucci, Thomas M. Brown, Andrea Reale, Aldo Di Carlo:
Degradation mechanisms of dye-sensitized solar cells: Light, bias and temperature effects. 3 - Sean P. Ogden, Juan Borja, Huawei Zhou, Joel L. Plawsky, Toh-Ming Lu, William N. Gill:
A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test. 4 - Palkesh Jain, Sachin S. Sapatnekar, Jordi Cortadella:
Stochastic and topologically aware electromigration analysis for clock skew. 3 - Gavin D. R. Hall, Derryl D. J. Allman:
An evaluation of accelerated failure time models of stress-migration and stress-induced voiding failures under vias. 2 - J. Poortmans, E. Voroshaszi, W. Deceuninck, J. Szlufcik:
Higher performance and improved reliability: Key to making photovoltaics the mainstream sustainable electricity generation source of the 21st Century. 3 - Nilesh Goel, P. Dubey, J. Kawa, S. Mahapatra:
Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages. 5 - Riichiro Shirota, Bo-Jun Yang, Yung-Yueh Chiu, Yu-Ting Wu, Pin-Yao Wang, Jung-Ho Chang, M. Yano, M. Aoki, T. Takeshita, C.-Y. Wang, I. Kurachi:
Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period. 12 - Cheng Pu Chiu, Yen-Chun Liu, Bin-Siang Tsai, Yi-Jing Wang, Yeh-Sheng Lin, Yun-Ru Chen, Chien-Lin Weng, Sheng-Yuan Hsueh, Jack Hung, Ho-Yu Lai, Jei-Ming Chen, Albert H.-B. Cheng, Chien-Chung Huang:
TDDB improvement of copper/dielectric in the highly-integrated BEOL structure for 28nm technology node and beyond. 3 - P. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, R. G. Southwick, Eduard Cartier:
NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation. 2 - Jae-Gyung Ahn, Ming Feng Lu, Nitin Navale, Dawn Graves, Ping-Chin Yeh, Jonathan Chang, S. Y. Pai:
Product-level reliability estimator with budget-based reliability management in 20nm technology. 6 - Xiaonan Yang, Jing Liu, Zhiwei Zheng, Yan Wang, Dandan Jiang, Shengfen Chiu, Hanming Wu, Ming Liu:
Impact of P/E cycling on read current fluctuation of NOR Flash memory cell: A microscopic perspective based on low frequency noise analysis. 5 - Soonyoung Lee, Ilgon Kim, Sungmock Ha, Cheong-sik Yu, Jinhyun Noh, Sangwoo Pae, Jongwoo Park:
Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices. 4 - Nagarajan Raghavan, Michel Bosman, Kin Leong Pey:
Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer. 5 - S. Novak, C. Parker, D. Becher, M. Liu, Marty Agostinelli, M. Chahal, P. Packan, P. Nayak, Stephen Ramey, S. Natarajan:
Transistor aging and reliability in 14nm tri-gate technology. 2 - Taiki Uemura, Masanori Hashimoto:
Investigation of single event upset and total ionizing dose in FeRAM for medical electronic tag. 1 - Yoshiyuki Kawashima, Takashi Hashimoto, Ichiro Yamakawa:
Investigation of the data retention mechanism and modeling for the high reliability embedded split-gate MONOS flash memory. 6 - Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, K. Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken:
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. 3 - A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo:
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. 5 - Giulio Marti, Lucile Arnaud, David Ney, Yves Wouters:
Interconnect design study for electromigration reliability improvement. 2 - Jan Gaudestad, Antonio Orozco, Jack Chen:
Short localization in CPU FlipChip using thermal imaging and magnetic current imaging: Advanced fault isolation technique comparison. 3 - Kris Croes, Alicja Lesniewska, Chen Wu, Ivan Ciofi, Agnieszka Banczerowska, B. Briggs, S. Demuynck, Zsolt Tokei, Jürgen Bömmels, Y. Saad, W. Gao:
Intrinsic reliability of local interconnects for N7 and beyond. 2 - Jongwoo Park, Jungpyo Hong, Miji Lee, Dongyoon Sun, Kyung Kang, Taesung Kim, Seungwon Kim, Sujin Kwon, Changkyu Joo, Sangsu Ha, Wooyeon Kim, Jongsu Ryu, Sangwoo Pae:
Contact resistance of solder bump with low cost photosensitive polyimide for high performance SoC. 3 - Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier:
Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. 6 - Carmine Miccoli, Giovanni M. Paolucci, Christian Monzio Compagnoni, Alessandro S. Spinelli, Akira Goda:
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND flash arrays. 9 - Kai-Chieh Kao, Chi-Jia Huang, Chang-Sian Wu, Yi-Lung Cheng:
Thickness dependence on electrical and reliability properties for dense and porous low dielectric constant materials. 6 - I. K. Chen, C. L. Chen, Y.-H. Lee, R. Lu, Y. W. Lee, H. H. Hsu, Y. W. Tseng, Y. W. Lin, J. R. Shih:
New TDDB lifetime model for AC inverter-like stress in advance FinFET structure. 5 - Vincent Huard, D. Angot, Florian Cacho:
From BTI variability to product failure rate: A technology scaling perspective. 6 - GeunYong Bak, Soonyoung Lee, Hosung Lee, Kyungbae Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Charlie Slayman:
Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams. 3 - Zhiqiang Wei, Koji Katayama, Shunsaku Muraoka, Ryutaro Yasuhara, Takumi Mikawa, Koji Eriguchi:
A new prediction method for ReRAM data retention statistics based on 3D filament structures. 5