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Barry J. O'Sullivan
Person information
- affiliation: KU Leuven, Belgium
- not to be confused with: Barry O'Sullivan
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2020 – today
- 2024
- [c17]Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS 2024: 1-9 - [c16]Ping-Yi Hsieh, Ameni Ben Driss, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Ingrid De Wolf:
Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors. IRPS 2024: 2 - [c15]J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi:
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS 2024: 36 - 2022
- [c14]J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta
, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi:
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS 2022: 1-6 - [c13]Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt:
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS 2022: 4 - [c12]Ping-Yi Hsieh, Artemisia Tsiara
, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken
, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf:
Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. IRPS 2022: 9 - [c11]Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt:
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS 2022: 12-1 - 2021
- [c10]Sidharth Rao
, Woojin Kim, Simon Van Beek, Shreya Kundu, Manu Perumkunnil, Stefan Cosemans, Farrukh Yasin, Sebastien Couet
, Robert Carpenter, Barry J. O'Sullivan, Shamin H. Sharifi, N. Jossart, Laurent Souriau
, Ludovic Goux, Dimitri Crotti, Gouri Sankar Kar:
STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application. IMW 2021: 1-4 - [c9]Simon Van Beek, Siddharth Rao
, Shreya Kundu, Woojin Kim, Barry J. O'Sullivan, Stefan Cosemans, Farrukh Yasin, Robert Carpenter, Sebastien Couet
, Shamin H. Sharifi, Nico Jossart, Davide Crotti, Gouri Sankar Kar:
Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution. IRPS 2021: 1-5 - [c8]Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl:
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS 2021: 1-6 - 2020
- [c7]Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet
, Davide Crotti, Dimitri Linten, Gouri Sankar Kar:
Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs. IRPS 2020: 1-5 - [c6]Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer
, Michael Waltl
:
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS 2020: 1-6
2010 – 2019
- 2019
- [c5]Alicja Lesniewska, S. A. Srinivasan, Joris Van Campenhout, Barry J. O'Sullivan, Kris Croes:
Accelerated Device Degradation of High-Speed Ge Waveguide Photodetectors. IRPS 2019: 1-7 - [c4]Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta
, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi:
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS 2019: 1-8 - 2018
- [j3]Gerhard Rzepa
, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic
, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch
, Michael Waltl
, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
:
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85: 49-65 (2018) - [c3]Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar:
Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. ESSDERC 2018: 146-149 - [c2]Tibor Grasser, Bernhard Stampfer
, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky
, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer:
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2 - [c1]Barry J. O'Sullivan, Simon Van Beek, Philippe J. Roussel, Sidharth Rao
, Wonsub Kim, S. Couet, Johan Swerts, Farrukh Yasin, Dimitri Crotti, Dimitri Linten, Gouri Sankar Kar:
Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown. IRPS 2018: 5-1
2000 – 2009
- 2005
- [j2]J. M. Decams, H. Guillon, Carmen Jiménez
, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, Barry J. O'Sullivan, Mircea Modreanu
, Paul K. Hurley
:
Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. Microelectron. Reliab. 45(5-6): 929-932 (2005) - 2001
- [j1]Barry J. O'Sullivan, Paul K. Hurley
, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven:
Flat band voltage shift and oxide properties after rapid thermal annealing. Microelectron. Reliab. 41(7): 1053-1056 (2001)
Coauthor Index
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last updated on 2024-06-18 21:22 CEST by the dblp team
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