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Semantic ScholarMicroelectronics Journal, Volume 36
Volume 36, Number 1, January 2005
G. E. Zardas, P. H. Yannakopoulos, M. Ziska, Chrys I. Symeonides, P. C. Euthymiou, O. Csabay:
Dependence of GaAs: Si persistent photoconductivity on temperature and alpha-particle irradiation. 1-4Emmanuel M. Drakakis:
Approximate process-parameter-dependent study of the logarithmic domain lossy integrator harmonic distortion levels. 5-23H. Choi, Eui Kwan Koh, Yong Min Cho, Junggeun Jin, Dongjin Byun, M. Yoon:
Effects of extended dislocations on charge distribution in GaN epilayer. 25-28Nian Zhan, M. C. Poon, Hei Wong, K. L. Ng, Chi-Wah Kok:
Dielectric breakdown characteristics and interface trapping of hafnium oxide films. 29-33Yang-Kuao Kuo, Chuen-Guang Chao:
Analysis of the effects of reflectance and refraction generated by wafers made from fused silica, ALOxNy and TiSixNy under different light sources on pattern length and best focus. 35-39Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai:
Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation. 41-49Marco Antonio Robert Alves, D. F. Takeuti, E. S. Braga:
Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching. 51-54Te-Hua Fang, Win-Jin Chang, Sung-Lin Tsai:
Nanomechanical characterization of polymer using atomic force microscopy and nanoindentation. 55-59A. H. You, D. S. Ong:
Full-band Monte Carlo simulation of thin InP p+-i-n+ diodes. 61-65Uygar Avci, Sandip Tiwari:
A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception. 67-75Miguel A. Méndez, José Luis González, Diego Mateo, Antonio Rubio:
An investigation on the relation between digital circuitry characteristics and power supply noise spectrum in mixed-signal CMOS integrated circuits. 77-84K. T. Kaschani:
Electrical overstress due to ESD induced displacement currents. 85-90S. B. Wang, S. B. Zhou, G. Huang, B. F. Xiong, S. H. Chen, X. J. Yi:
Fabrication of 128×128 element optical switch array by micromachining technology. 91-95Ming-Sze Tong, Yilong Lu, Yinchao Chen, Mingwu Yang, Qunsheng Cao, Viktor Krozer, Rüdiger Vahldieck:
Corrigendum to: Design and analysis of planar printed microwave and PBG filters using an FDTD method. 97
Volume 36, Number 2, February 2005
Lotfi Beji, L. Bouzaïene, B. Ismaïl, L. Sfaxi, Hichem Maaref, Hafedh Ben Ouada:
Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate. 99-103Xiao Buwen, Shang Yafeng, Meng Meng, Li Chuannan:
Enhancement of hole injection with an ultra-thin Ag2O modified anode in organic light-emitting diodes. 105-108Z. W. Zhong, S. C. Lim, Anand K. Asundi:
Effects of thermally induced optical fiber shifts in V-groove arrays for optical MEMS. 109-113A. Belghachi:
Modelling of perimeter recombination in GaAs solar cells. 115-124Yong-ning He, Jing-wen Zhang, Xiaodong Yang, Qing-an Xu, Xinghui Liu, Chang-Chun Zhu, Xun Hou:
Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE. 125-128F. K. Yam, Z. Hassan:
Innovative advances in LED technology. 129-137Cristian Chitu, Manfred Glesner:
An FPGA implementation of the AES-Rijndael in OCB/ECB modes of operation. 139-146Wen-Tsong Shiue:
Power/area/delay aware FSM synthesis and optimization. 147-162Nikolaos D. Zervas, George Theodoridis, Dimitrios Soudris:
Behavioral-level event-driven power management for DECT digital receivers. 163-172
Volume 36, Numbers 3-6, March-June 2005
Mohamed Henini, Isaac Hernández-Calderón:
Preface. 173-174Dieter Bimberg, Matthias Kuntz, Matthias Laemmlin:
Quantum dot photonic devices for lightwave communication. 175-179Vittorianna Tasco, B. Potì, Massimo de Vittorio, Milena De Giorgi, R. Cingolani, A. Passaseo:
Improved performances of 1.3mum InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition. 180-182G. Sun, Richard A. Soref, Jacob B. Khurgin:
A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps. 183-185T. V. Torchynska, H. M. Alfaro Lopez, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Malloy, Ramon Peña-Sierra, Eu. Shcherbina:
Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power. 186-189J. S. Yim, J. H. Lee, Y. D. Jang, Moon-Deock Kim, Donghan Lee, H. D. Kim, S. H. Pyun, W. G. Jeong, J. S. Kim, S. U. Hong:
Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5mum laser diodes. 190-193A. F. G. Monte, J. F. R. Cunha, M. A. P. Soler, S. W. Silva, A. A. Quivy, Paulo César de Morais:
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3mum. 194-196S. Frederick, D. Dalacu, D. Poitras, G. C. Aers, P. J. Poole, J. Lefebvre, D. Chithrani, R. L. Williams:
Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities. 197-199Milena De Giorgi, G. Rainò, T. Todaro, Massimo de Vittorio, Vittorianna Tasco, A. Passaseo, R. Cingolani:
Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance. 200-202Sung-Ho Hwang, J. C. Shin, Jin Dong Song, Won Jun Choi, Jung-Il Lee, H. Han:
Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment. 203-206Daniel S. Raimundo, Adriana B. Stelet, Francisco J. R. Fernandez, Walter J. Salcedo:
Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication. 207-211Raphael Tsu:
Stability issues in tunneling via quantum systems. 212-215Takashi Hanada, Takafumi Yao:
Formation and evolution of strain-induced self-assembled dot. 216-218S. L. Morelhão, L. H. Avanci, R. Freitas, A. A. Quivy:
Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning. 219-222B. Sherliker, P. Harmer, M. P. Halsall, P. Buckle, P. J. Parbrook, T. Wang:
Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. 223-226H. Pettersson, L. Landin, Ying Fu, M. Kleverman, M. Borgström, W. Seifert, Lars Samuelson:
Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP. 227-230C. A. Duque, N. Porras-Montenegro, Z. Barticevic, M. Pacheco, L. E. Oliveira:
Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure. 231-233N. O. Dantas, A. F. G. Monte, W. A. Cardoso, A. G. Brito-Madurro, J. M. Madurro, Paulo César de Morais:
Growth and characterisation of ZnO quantum dots in polyacrylamide. 234-236A. Andreev, F. Quochi, H. Sitter, H. Hoppe, Niyazi Serdar Sariciftci, A. Mura, G. Bongiovanni:
Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy. 237-240A. M. Alcalde, O. O. Diniz Neto, G. E. Marques:
Spin relaxation due to the phonon modulation of the spin-orbit interaction in quantum dots. 241-243F. A. P. Osório, A. B. A. Marques, P. C. M. Machado, A. N. Borges:
The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1-x as quantum dots. 244-246Katsumoto Ikeda, Fujio Minami, Nobuyuki Koguchi:
Acoustical phonon dephasing in GaAs quantum dots. 247-249K. Daneshvar, K. Kang, R. Tsu:
Three-dimensional quantum dot array. 250-252Alexander N. Korotkov:
Quantum feedback of a double-dot qubit. 253-255G. J. Brown, F. Szmulowicz, H. Haugan, K. Mahalingam, S. Houston:
Design of InAs/Ga(In)Sb superlattices for infrared sensing. 256-259M. El Tahchi, E. Nassar, P. Mialhe:
Study and development of a silicon infrared diode operating under forward bias. 260-263Igor A. Sukhoivanov, O. V. Mashoshyna, V. K. Kononenko, D. V. Ushakov:
How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers. 264-268Keiko Takase, Yukio Kawano, Tohru Okamoto:
Time response of a highly sensitive and tunable THz detector using the quantum hall effect. 269-271Kameshwar K. Yadavalli, Alexei O. Orlov, Gregory L. Snider, Jeffrey Elam:
Aluminum oxide tunnel barriers for single electron memory devices. 272-276M. D. B. Charlton, M. E. Zoorob, M. C. Netti, N. Perney, G. J. Parker, P. Ayliffe, J. J. Baumberg:
Realisation of ultra-low loss photonic crystal slab waveguide devices. 277-281Jiun Haw Chu, O. Voskoboynikov, C. P. Lee:
Slow light in photonic crystals. 282-284O. Bendix, J. A. Méndez-Bermúdez, G. A. Luna-Acosta, U. Kuhl, Hans-Jürgen Stöckmann:
Design of beam splitters and microlasers using chaotic waveguides. 285-288José Azaña, Mykola Kulishov:
Optical pulse shaping capabilities of grating-assisted codirectional couplers. 289-293Pratyush Das Kanungo, Alexandra Imre, Wu Bin, Alexei O. Orlov, Gregory L. Snider, Wolfgang Porod, Nicholas P. Carter:
Gated hybrid Hall effect device on silicon. 294-297O'Dae Kwon, M. J. Kim, S.-J. An, D. K. Kim, S. E. Lee:
Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device. 298-300Samson Mil'shtein, J. Palma:
Heterostructure transistor with tunable gate bias. 301-303Ravi K. Kummamuru, Mo Liu, Alexei O. Orlov, Craig S. Lent, Gary H. Bernstein, Gregory L. Snider:
Temperature dependence of the locked mode in a single-electron latch. 304-307Xiangning Luo, Alexei O. Orlov, Gregory L. Snider:
Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips. 308-312Samson Mil'shtein, C. Gil, Peter Ersland:
Heterojunction semiconductor triode - a new vertical device. 313-315Samson Mil'shtein, C. Liessner:
High speed switch using pairs of pHEMTs with shifted gates. 316-318Samson Mil'shtein:
Shaping electrical field in heterostructure transistors. 319-322Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti:
Hole transport in p-channel Si MOSFETs. 323-326W. R. Clarke, A. P. Micolich, A. R. Hamilton, M. Y. Simmons, K. Muraki, Y. Hirayama:
Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET. 327-330C.-T. Liang, M. Kataoka, G. Faini, D. Mailly, M. Y. Simmons, A. W. Rushforth, C. G. Smith, David A. Ritchie, M. Pepper:
Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel. 331-333Jesús Iñarrea, Gloria Platero:
Microwave-induced zero-resistance states on 2D electron gas: theoretical explanation and temperature dependence. 334-337N. L. Ivina, L. K. Orlov, V. B. Shevtsov, N. A. Alyabina:
Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers. 338-341J. C. Salcedo-Reyes, Isaac Hernández-Calderón:
Symmetry properties and electronic band structure of ordered Zn0.5Cd0.5Se alloys. 342-346S. J. Vlaev, I. Rodríguez-Vargas, L. M. Gaggero-Sager:
Mean life times of quasi-bound states in delta-doped GaAs quantum wells. 347-349Oleksiy V. Shulika, Ivan M. Safonov, Igor A. Sukhoivanov, Volodimir V. Lysak:
Quantum capture area in layered quantum well structures. 350-355Y. Galvão Gobato, M. J. S. P. Brasil, I. Camps, H. B. de Carvalho, L. F. dos Santos, G. E. Marques, Mohamed Henini, L. Eaves, G. Hill:
Charge buildup effects in asymmetric p-type resonant tunneling diodes. 356-358M. G. Bezerra, J. A. K. Freire, V. N. Freire, G. A. Farias, F. M. S. Lima, A. L. A. Fonseca, O. A. C. Nunes Jr.:
Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices. 359-361Adrián Alfaro-Martínez, Isaac Hernández-Calderón:
Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe. 362-365R. G. Mani:
AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices. 366-368Carlos L. Beltrán Ríos, N. Porras-Montenegro:
Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs-AlGaAs quantum wells. 369-373Tatiana Prutskij, Claudio Pelosi, Raul A. Brito-Orta:
Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques. 374-378E. T. Croke, R. N. Schwartz, B. Shi, A. A. Narayanan, Andrey A. Kiselev, Mark F. Gyure:
Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells. 379-382Pablo Villamil, Carlos Cabra, N. Porras-Montenegro:
Excited states and infrared transition energies of a donor impurity in cylindrical GaAs-Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field. 383-388Jhang W. Lee, Young Woo Ahn, Jae Ho Song, Byung Gyu Cho, Il Ho Ahn:
AlGaAs/InGaAs PHEMT with multiple quantum wire gates. 389-391Jong Chang Yi:
Self-consistent analysis of the miniband structures in superlattice quantum wires. 392-395M. L. Orlov, Yu. A. Romanov, L. K. Orlov:
Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field. 396-400P. Pereyra, A. Velasco-Chávez:
Absence of Wannier-Stark ladders in finite superlattices. 401-403I. Rodríguez-Vargas, L. M. Gaggero-Sager:
Thomas-Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations. 404-406D. H. A. L. Anselmo, A. L. Dantas, S. K. Medeiros, G. A. Farias, Eudenílson L. Albuquerque:
Optical phonon modes confinement in quasiperiodic semiconductor superlattice. 407-410Diosdado Villegas, Fernando de León-Pérez, Rolando Pérez-Alvarez:
Gaussian superlattice for phonons. 411-412M. E. Mora-Ramos, V. Agarwal, J. A. Soto Urueta:
Propagation of light in quasi-regular dielectric heterostructures with delta-like layers. 413-415L. M. Gaggero-Sager, M. E. Mora-Ramos, Miguel Angel Olivares-Robles:
Calculation of electronic properties in AlxGa1-x delta-doped systems. 416-418P. Pereyra, A. Anzaldo-Meneses:
Electronic transport and interfering phenomena induced by transverse electric field. 419-421Hiroyuki Shima, Tsuneyoshi Nakayama:
Breakdown of Anderson localization in disordered quantum chains. 422-424R. Nemutudi, C.-T. Liang, M. J. Murphy, Harvey E. Beere, C. G. Smith, David A. Ritchie, M. Pepper, G. A. C. Jones:
Jain-Kivelson-type resonance as a noninvasive probe of screening in the quantum Hall regime. 425-427Shang-Chia Chen, Shih-Kai Lin, Kun-Ta Wu, Chao-Ping Huang, Pen-Hsiu Chang, N. C. Chen, Chin-An Chang, Hsian-Chu Peng, Chuang-Feng Shih, Kuo-Shung Liu:
Transport measurements on MOVPE-grown InN films. 428-430R. B. de Almeida, A. N. Borges, P. C. M. Machado, F. A. P. Osório:
Confinement effect on the intradonor 1s-2p+ transition energies in GaN quantum wells. 431-433S. C. P. Rodrigues Jr., G. M. Sipahi Jr., E. F. da Silva:
Optical and electronic properties of AlInGaN/InGaN superlattices. 434-437Peter Kordos, J. Bernát, M. Marso:
Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT. 438-441J. Misiewicz, R. Kudrawiec, M. Syperek, R. Paszkiewicz, B. Paszkiewicz, M. Tlaczala:
Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy. 442-445J. Misiewicz, R. Kudrawiec, M. Motyka, J. Andrzejewski, D. Gollub, Alfred Forchel:
Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells. 446-449G. Sun, Richard A. Soref:
Design and simulation of a GaN/AlGaN quantum cascade laser for terahertz emission. 450-452H. J. Lozykowski, W. M. Jadwisienczak, A. Bensaoula, O. Monteiro:
Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN. 453-455Ryan Buckmaster, J. H. Yoo, K. Shin, Y. Yao, T. Sekiguchi, M. Yokoyama, Takashi Hanada, Takenari Goto, M. Cho, Y. Kawazoe:
GaN nanodot fabrication by implant source growth. 456-459Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry:
Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures. 460-462A. C. Bittencourt, J. F. Estanislau, G. E. Marques:
Spin-polarized charge fluctuations in magnetic tunneling diodes. 463-465Tsai-Yu Huang, Chao-Ping Huang, Yi-Hsing Chiu, C.-T. Liang, M. Y. Simmons, David A. Ritchie:
'Mobility gap' of a spin-split GaAs two-dimensional electron gas. 466-468D. R. Hang, R. B. Dunford, Gil-Ho Kim, H. D. Yeh, C. F. Huang, David A. Ritchie, Ian Farrer, Y. W. Zhang, C.-T. Liang, Y. H. Chang:
Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect. 469-471O. Navarro, V. Men'shov, V. Tugushev:
Spin ordering in chromium layered structures with inserted nonmagnetic monolayers. 472-474M. S. Tomar, Surinder P. Singh, O. Perales-Pérez, R. P. Guzman, E. Calderón-Ortiz, C. Rinaldi-Ramos:
Synthesis and magnetic behavior of nanostructured ferrites for spintronics. 475-479G. E. Marques, A. C. R. Bittencourt, Victor Lopez-Richard, C. F. Destefani, Sergio E. Ulloa:
Spin carrier dynamics under full spin-orbit coupling. 480-483K. C. Seo, G. H. Ihm, S. J. Lee:
Spin-polarized tunneling in an electromagnetic structure. 484-487V. Tugushev, E. Kulatov, O. Navarro:
The mechanism of interlayer exchange coupling in silicon/iron layered structures. 488-490Surinder P. Singh, M. S. Tomar, Y. Ishikawa:
Experimental and theoretical studies of LiNi1/3Mn1/3M1/3O2 [M=Mo and Rh] for cathode material. 491-494G. Ortega-Cervantez, G. Rueda-Morales, J. Ortiz-López:
Catalytic CVD production of carbon nanotubes using ethanol. 495-498Solange B. Fagan, Silvete Guerini, J. Mendes Filho, V. Lemos:
Lithium intercalation into single-wall carbon nanotube bundles. 499-501Victor Ovchinnikov, S. Novikov, T. Toivola, J. Sinkkonen:
Electroluminescence from B- and P-doped silicon nanoclusters. 502-505Andreas Fissel, C. Wang, E. Bugiel, H. Jörg Osten:
Epitaxial growth of non-cubic silicon. 506-509A. Vivas Hernandez, T. V. Torchynska, Y. Matsumoto, S. Jiménez Sandoval, M. Dybiec, S. Ostapenko, L. V. Shcherbina:
Optical investigation of Si nano-crystals in amorphous silicon matrix. 510-513E. Chambon, E. Florentin, T. V. Torchynska, J. González-Hernández, Y. V. Vorobiev:
Optical properties of porous silicon surface. 514-517L. K. Orlov, N. L. Ivina, A. V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. J. Horvath:
Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures. 518-521M. Alper Sahiner, Daniel F. Downey, Steven W. Novak, Joseph C. Woicik, Dario A. Arena:
The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques. 522-526A. E. Martínez-Cantón, Miguel García-Rocha, Isaac Hernández-Calderón, R. Ortega-Martínez:
Thermal quenching of the self-activated band of ZnSe: Cl thin films grown by molecular beam epitaxy. 527-530C. L. Heng, T. G. Finstad, Y. J. Li, A. E. Gunnæs, A. Olsen, P. Storås:
Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing. 531-535T. V. Torchynska, A. Díaz Cano, S. Jiménez Sandoval, M. Dybiec, S. Ostapenko, M. Mynbaeva:
Photoluminescence and Raman spectroscopy in porous SiC. 536-538O. Millo, I. Asulin, A. Sharoni, O. Yuli, G. Koren:
The superconductor proximity effect in Au-YBa2Cu3O7-delta bilayer films: the role of order parameter anisotropy. 539-542Oscar Blanco-Alonso, E. Martínez, J. Heiras, J. Siqueiros, A. G. Castellanos-Guzmán:
Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films. 543-545Xiaojun Wang, Z. Y. He, D. Jia, W. Strek, R. Dariusz, D. Hreniak, W. M. Yen:
Crystal size dependence of the persistent phosphorescence in Sr2ZnSi2O7: Eu2+, Dy3+. 546-548Xiu-Tian Zhao, Kenji Sakka, Naoto Kihara, Yasuyuki Takada, Makoto Arita, Masataka Masuda:
Structure and photo-induced features of TiO2 thin films prepared by RF magnetron sputtering. 549-551Milena De Giorgi, D. Tarì, L. Manna, R. Krahne, R. Cingolani:
Optical properties of colloidal nanocrystal spheres and tetrapods. 552-554Juan M. Camacho, A. I. Oliva:
Morphology and electrical resistivity of metallic nanostructures. 555-558Vitaliy N. Pustovit, Tigran V. Shahbazyan:
Quantum-size effects in SERS from noble-metal nanoparticles. 559-563O. Voskoboynikov, G.