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ORCIDMicroelectronics Journal, Volume 36
Volume 36, Number 1, January 2005
- G. E. Zardas, P. H. Yannakopoulos, M. Ziska, Chrys I. Symeonides, P. C. Euthymiou, O. Csabay:
Dependence of GaAs: Si persistent photoconductivity on temperature and alpha-particle irradiation. 1-4 - Emmanuel M. Drakakis:
Approximate process-parameter-dependent study of the logarithmic domain lossy integrator harmonic distortion levels. 5-23 - H. Choi, Eui Kwan Koh, Yong Min Cho, Junggeun Jin, Dongjin Byun, Minjoong Yoon
:
Effects of extended dislocations on charge distribution in GaN epilayer. 25-28 - Nian Zhan, M. C. Poon, Hei Wong, K. L. Ng, Chi-Wah Kok:
Dielectric breakdown characteristics and interface trapping of hafnium oxide films. 29-33 - Yang-Kuao Kuo, Chuen-Guang Chao:
Analysis of the effects of reflectance and refraction generated by wafers made from fused silica, ALOxNy and TiSixNy under different light sources on pattern length and best focus. 35-39 - Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai:
Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation. 41-49 - Marco Antonio Robert Alves, D. F. Takeuti, E. S. Braga:
Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching. 51-54 - Te-Hua Fang, Win-Jin Chang, Sung-Lin Tsai:
Nanomechanical characterization of polymer using atomic force microscopy and nanoindentation. 55-59 - A. H. You, D. S. Ong:
Full-band Monte Carlo simulation of thin InP p+-i-n+ diodes. 61-65 - Uygar Avci, Sandip Tiwari:
A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception. 67-75 - Miguel A. Méndez, José Luis González, Diego Mateo, Antonio Rubio:
An investigation on the relation between digital circuitry characteristics and power supply noise spectrum in mixed-signal CMOS integrated circuits. 77-84 - K. T. Kaschani:
Electrical overstress due to ESD induced displacement currents. 85-90 - S. B. Wang, S. B. Zhou, G. Huang, B. F. Xiong, S. H. Chen, X. J. Yi:
Fabrication of 128×128 element optical switch array by micromachining technology. 91-95 - Ming-Sze Tong, Yilong Lu, Yinchao Chen, Mingwu Yang, Qunsheng Cao, Viktor Krozer, Rüdiger Vahldieck:
Corrigendum to: Design and analysis of planar printed microwave and PBG filters using an FDTD method. 97
Volume 36, Number 2, February 2005
- Lotfi Beji, L. Bouzaïene, B. Ismaïl, L. Sfaxi, Hichem Maaref, Hafedh Ben Ouada:
Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate. 99-103 - Xiao Buwen, Shang Yafeng, Meng Meng, Li Chuannan:
Enhancement of hole injection with an ultra-thin Ag2O modified anode in organic light-emitting diodes. 105-108 - Z. W. Zhong, S. C. Lim, Anand K. Asundi:
Effects of thermally induced optical fiber shifts in V-groove arrays for optical MEMS. 109-113 - A. Belghachi:
Modelling of perimeter recombination in GaAs solar cells. 115-124 - Yong-ning He, Jing-wen Zhang, Xiaodong Yang, Qing-an Xu, Xinghui Liu, Chang-Chun Zhu, Xun Hou:
Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE. 125-128 - F. K. Yam, Zainuriah Hassan:
Innovative advances in LED technology. 129-137 - Cristian Chitu, Manfred Glesner:
An FPGA implementation of the AES-Rijndael in OCB/ECB modes of operation. 139-146 - Wen-Tsong Shiue:
Power/area/delay aware FSM synthesis and optimization. 147-162 - Nikolaos D. Zervas, George Theodoridis, Dimitrios Soudris:
Behavioral-level event-driven power management for DECT digital receivers. 163-172
Volume 36, Numbers 3-6, March-June 2005
- Mohamed Henini, Isaac Hernández-Calderón:
Preface. 173-174 - Dieter Bimberg, Matthias Kuntz, Matthias Laemmlin:
Quantum dot photonic devices for lightwave communication. 175-179 - Vittorianna Tasco, B. Potì, Massimo de Vittorio, Milena De Giorgi, R. Cingolani, A. Passaseo:
Improved performances of 1.3mum InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition. 180-182 - G. Sun, Richard A. Soref, Jacob B. Khurgin:
A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps. 183-185 - T. V. Torchynska, H. M. Alfaro Lopez, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Malloy, Ramon Peña-Sierra, Eu. Shcherbina:
Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power. 186-189 - J. S. Yim, J. H. Lee, Y. D. Jang, Moon-Deock Kim, Donghan Lee, H. D. Kim, S. H. Pyun, W. G. Jeong, J. S. Kim, S. U. Hong:
Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5mum laser diodes. 190-193 - A. F. G. Monte, J. F. R. Cunha, M. A. P. Soler, S. W. Silva, A. A. Quivy, Paulo César de Morais:
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3mum. 194-196 - Simon Frédérick, Dan Dalacu, Daniel Poitras, Geof C. Aers, Philip J. Poole, Jacques Lefebvre, D. Chithrani, Robin L. Williams:
Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities. 197-199 - Milena De Giorgi, G. Rainò, T. Todaro, Massimo de Vittorio, Vittorianna Tasco, A. Passaseo, R. Cingolani:
Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance. 200-202 - Sung-Ho Hwang, J. C. Shin, Jin Dong Song, Won Jun Choi, Jung-Il Lee, H. Han:
Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment. 203-206 - Daniel S. Raimundo, Adriana B. Stelet, Francisco J. R. Fernandez, Walter J. Salcedo:
Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication. 207-211 - Raphael Tsu:
Stability issues in tunneling via quantum systems. 212-215 - Takashi Hanada, Takafumi Yao:
Formation and evolution of strain-induced self-assembled dot. 216-218 - S. L. Morelhão, L. H. Avanci, R. Freitas, A. A. Quivy:
Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning. 219-222 - B. Sherliker, P. Harmer, M. P. Halsall, P. Buckle, P. J. Parbrook, T. Wang:
Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. 223-226 - H. Pettersson, L. Landin, Ying Fu, M. Kleverman, Magnus Borgström, Werner Seifert, Lars Samuelson:
Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP. 227-230 - C. A. Duque, N. Porras-Montenegro, Z. Barticevic, M. Pacheco, L. E. Oliveira:
Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure. 231-233 - N. O. Dantas, A. F. G. Monte, W. A. Cardoso, A. G. Brito-Madurro, J. M. Madurro, Paulo César de Morais:
Growth and characterisation of ZnO quantum dots in polyacrylamide. 234-236 - Andrei Andreev, Francesco Quochi, Helmut Sitter, Harald Hoppe, Niyazi Serdar Sariciftci, Andrea Mura, Giovanni Bongiovanni:
Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy. 237-240 - A. M. Alcalde, O. O. Diniz Neto, G. E. Marques:
Spin relaxation due to the phonon modulation of the spin-orbit interaction in quantum dots. 241-243 - F. A. P. Osório, A. B. A. Marques, P. C. M. Machado, A. N. Borges:
The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1-x as quantum dots. 244-246 - Katsumoto Ikeda, Fujio Minami, Nobuyuki Koguchi:
Acoustical phonon dephasing in GaAs quantum dots. 247-249 - K. Daneshvar, K. Kang, R. Tsu:
Three-dimensional quantum dot array. 250-252 - Alexander N. Korotkov:
Quantum feedback of a double-dot qubit. 253-255 - G. J. Brown, F. Szmulowicz, H. Haugan, K. Mahalingam, S. Houston:
Design of InAs/Ga(In)Sb superlattices for infrared sensing. 256-259 - M. El Tahchi, E. Nassar, P. Mialhe:
Study and development of a silicon infrared diode operating under forward bias. 260-263 - Igor A. Sukhoivanov, O. V. Mashoshyna, V. K. Kononenko, D. V. Ushakov:
How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers. 264-268 - Keiko Takase, Yukio Kawano, Tohru Okamoto:
Time response of a highly sensitive and tunable THz detector using the quantum hall effect. 269-271 - Kameshwar K. Yadavalli, Alexei O. Orlov, Gregory L. Snider, Jeffrey Elam:
Aluminum oxide tunnel barriers for single electron memory devices. 272-276 - M. D. B. Charlton, M. E. Zoorob, M. C. Netti, N. Perney, G. J. Parker, P. Ayliffe, J. J. Baumberg:
Realisation of ultra-low loss photonic crystal slab waveguide devices. 277-281 - Jiun Haw Chu, O. Voskoboynikov, C. P. Lee:
Slow light in photonic crystals. 282-284 - O. Bendix, J. A. Méndez-Bermúdez, G. A. Luna-Acosta, U. Kuhl, Hans-Jürgen Stöckmann:
Design of beam splitters and microlasers using chaotic waveguides. 285-288 - José Azaña, Mykola Kulishov:
Optical pulse shaping capabilities of grating-assisted codirectional couplers. 289-293 - Pratyush Das Kanungo, Alexandra Imre, Wu Bin, Alexei O. Orlov, Gregory L. Snider, Wolfgang Porod, Nicholas P. Carter:
Gated hybrid Hall effect device on silicon. 294-297 - O'Dae Kwon, M. J. Kim, S.-J. An, Dongkwon Kim, Seung Eun Lee:
Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device. 298-300 - Samson Mil'shtein, J. Palma:
Heterostructure transistor with tunable gate bias. 301-303 - Ravi K. Kummamuru, Mo Liu, Alexei O. Orlov, Craig S. Lent, Gary H. Bernstein, Gregory L. Snider:
Temperature dependence of the locked mode in a single-electron latch. 304-307 - Xiangning Luo, Alexei O. Orlov, Gregory L. Snider:
Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips. 308-312 - Samson Mil'shtein, C. Gil, Peter Ersland:
Heterojunction semiconductor triode - a new vertical device. 313-315 - Samson Mil'shtein, C. Liessner:
High speed switch using pairs of pHEMTs with shifted gates. 316-318 - Samson Mil'shtein:
Shaping electrical field in heterostructure transistors. 319-322 - Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti:
Hole transport in p-channel Si MOSFETs. 323-326 - W. R. Clarke, Adam P. Micolich, A. R. Hamilton, M. Y. Simmons, Koji Muraki, Y. Hirayama:
Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET. 327-330 - C.-T. Liang, M. Kataoka, G. Faini, D. Mailly, M. Y. Simmons, A. W. Rushforth, C. G. Smith, David A. Ritchie, M. Pepper:
Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel. 331-333 - Jesús Iñarrea, Gloria Platero:
Microwave-induced zero-resistance states on 2D electron gas: theoretical explanation and temperature dependence. 334-337 - N. L. Ivina, L. K. Orlov, V. B. Shevtsov, N. A. Alyabina:
Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers. 338-341 - J. C. Salcedo-Reyes, Isaac Hernández-Calderón:
Symmetry properties and electronic band structure of ordered Zn0.5Cd0.5Se alloys. 342-346 - S. J. Vlaev, I. Rodríguez-Vargas, L. M. Gaggero-Sager:
Mean life times of quasi-bound states in delta-doped GaAs quantum wells. 347-349 - Oleksiy V. Shulika, Ivan M. Safonov, Igor A. Sukhoivanov, Volodimir V. Lysak:
Quantum capture area in layered quantum well structures. 350-355 - Yara Galvão Gobato, Maria José Santos Pompeu Brasil, Ihosvany Camps, Hugo Bonette de Carvalho, Lara F. dos Santos, Gilmar Eugênio Marques, Mohamed Henini, L. Eaves, G. Hill:
Charge buildup effects in asymmetric p-type resonant tunneling diodes. 356-358 - M. G. Bezerra, J. A. K. Freire, V. N. Freire, G. A. Farias, F. M. S. Lima, A. L. A. Fonseca, O. A. C. Nunes Jr.:
Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices. 359-361 - Adrián Alfaro-Martínez, Isaac Hernández-Calderón:
Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe. 362-365 - R. G. Mani:
AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices. 366-368 - Carlos L. Beltrán Ríos, N. Porras-Montenegro:
Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs-AlGaAs quantum wells. 369-373 - Tatiana Prutskij, Claudio Pelosi, Raul A. Brito-Orta:
Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques. 374-378 - E. T. Croke, R. N. Schwartz, B. Shi, A. A. Narayanan, Andrey A. Kiselev, Mark F. Gyure:
Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells. 379-382 - Pablo Villamil, Carlos Cabra, N. Porras-Montenegro:
Excited states and infrared transition energies of a donor impurity in cylindrical GaAs-Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field. 383-388 - Jhang W. Lee, Young Woo Ahn, Jae Ho Song, Byung Gyu Cho, Il Ho Ahn:
AlGaAs/InGaAs PHEMT with multiple quantum wire gates. 389-391 - Jong Chang Yi:
Self-consistent analysis of the miniband structures in superlattice quantum wires. 392-395 - M. L. Orlov, Yu. A. Romanov, L. K. Orlov:
Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field. 396-400 - P. Pereyra, A. Velasco-Chávez:
Absence of Wannier-Stark ladders in finite superlattices. 401-403 - I. Rodríguez-Vargas, L. M. Gaggero-Sager:
Thomas-Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations. 404-406 - D. H. A. L. Anselmo, A. L. Dantas, S. K. Medeiros, G. A. Farias, Eudenílson L. Albuquerque:
Optical phonon modes confinement in quasiperiodic semiconductor superlattice. 407-410 - Diosdado Villegas, Fernando de León-Pérez, Rolando Pérez-Alvarez:
Gaussian superlattice for phonons. 411-412 - M. E. Mora-Ramos, V. Agarwal, J. A. Soto Urueta:
Propagation of light in quasi-regular dielectric heterostructures with delta-like layers. 413-415 - L. M. Gaggero-Sager, M. E. Mora-Ramos, Miguel Angel Olivares-Robles:
Calculation of electronic properties in AlxGa1-x delta-doped systems. 416-418 - P. Pereyra, A. Anzaldo-Meneses:
Electronic transport and interfering phenomena induced by transverse electric field. 419-421 - Hiroyuki Shima, Tsuneyoshi Nakayama:
Breakdown of Anderson localization in disordered quantum chains. 422-424 - R. Nemutudi, C.-T. Liang, M. J. Murphy, Harvey E. Beere, C. G. Smith, David A. Ritchie, M. Pepper, G. A. C. Jones:
Jain-Kivelson-type resonance as a noninvasive probe of screening in the quantum Hall regime. 425-427 - Shang-Chia Chen, Shih-Kai Lin, Kun-Ta Wu, Chao-Ping Huang, Pen-Hsiu Chang, N. C. Chen, Chin-An Chang, Hsian-Chu Peng, Chuang-Feng Shih, Kuo-Shung Liu:
Transport measurements on MOVPE-grown InN films. 428-430 - R. B. de Almeida, A. N. Borges, P. C. M. Machado, F. A. P. Osório:
Confinement effect on the intradonor 1s-2p+ transition energies in GaN quantum wells. 431-433 - S. C. P. Rodrigues Jr., G. M. Sipahi Jr., Eronides Felisberto da Silva Júnior:
Optical and electronic properties of AlInGaN/InGaN superlattices. 434-437 - Peter Kordos, Jan Bernát, Michel Marso:
Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT. 438-441 - J. Misiewicz, R. Kudrawiec, M. Syperek, R. Paszkiewicz, B. Paszkiewicz, M. Tlaczala:
Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy. 442-445 - J. Misiewicz, R. Kudrawiec, M. Motyka, J. Andrzejewski, D. Gollub, Alfred Forchel:
Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells. 446-449 - G. Sun, Richard A. Soref:
Design and simulation of a GaN/AlGaN quantum cascade laser for terahertz emission. 450-452 - H. J. Lozykowski, W. M. Jadwisienczak, A. Bensaoula, O. Monteiro:
Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN. 453-455 - Ryan Buckmaster, J. H. Yoo, K. Shin, Y. Yao, T. Sekiguchi, M. Yokoyama, Takashi Hanada, Takenari Goto, M. Cho, Y. Kawazoe:
GaN nanodot fabrication by implant source growth. 456-459 - Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry:
Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures. 460-462 - A. C. Bittencourt, J. F. Estanislau, G. E. Marques:
Spin-polarized charge fluctuations in magnetic tunneling diodes. 463-465 - Tsai-Yu Huang, Chao-Ping Huang, Yi-Hsing Chiu, C.-T. Liang, M. Y. Simmons, David A. Ritchie:
'Mobility gap' of a spin-split GaAs two-dimensional electron gas. 466-468 - Da-Ren Hang, R. B. Dunford, Gil-Ho Kim, H. D. Yeh, C. F. Huang, David A. Ritchie, Ian Farrer, Y. W. Zhang, C.-T. Liang, Y. H. Chang:
Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect. 469-471 - O. Navarro, V. Men'shov, V. Tugushev:
Spin ordering in chromium layered structures with inserted nonmagnetic monolayers. 472-474 - M. S. Tomar, Surinder P. Singh, O. Perales-Pérez, R. P. Guzman, E. Calderón-Ortiz, C. Rinaldi-Ramos:
Synthesis and magnetic behavior of nanostructured ferrites for spintronics. 475-479 - G. E. Marques, A. C. R. Bittencourt, Victor Lopez-Richard, C. F. Destefani, Sergio E. Ulloa:
Spin carrier dynamics under full spin-orbit coupling. 480-483 - K. C. Seo, G. H. Ihm, S. J. Lee:
Spin-polarized tunneling in an electromagnetic structure. 484-487 - V. Tugushev, E. Kulatov, O. Navarro:
The mechanism of interlayer exchange coupling in silicon/iron layered structures. 488-490 - Surinder P. Singh, M. S. Tomar, Y. Ishikawa:
Experimental and theoretical studies of LiNi1/3Mn1/3M1/3O2 [M=Mo and Rh] for cathode material. 491-494 - G. Ortega-Cervantez, G. Rueda-Morales, J. Ortiz-López:
Catalytic CVD production of carbon nanotubes using ethanol. 495-498 - Solange B. Fagan, Silvete Guerini, J. Mendes Filho, V. Lemos:
Lithium intercalation into single-wall carbon nanotube bundles. 499-501 - Victor Ovchinnikov, S. Novikov, T. Toivola, J. Sinkkonen:
Electroluminescence from B- and P-doped silicon nanoclusters. 502-505 - Andreas Fissel, C. Wang, E. Bugiel, H. Jörg Osten:
Epitaxial growth of non-cubic silicon. 506-509 - A. Vivas Hernandez, T. V. Torchynska, Y. Matsumoto, Sergio Jiménez-Sandoval, M. Dybiec, S. Ostapenko, L. V. Shcherbina:
Optical investigation of Si nano-crystals in amorphous silicon matrix. 510-513 - E. Chambon, E. Florentin, T. V. Torchynska, J. González-Hernández, Y. V. Vorobiev:
Optical properties of porous silicon surface. 514-517 - L. K. Orlov, N. L. Ivina, A. V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. J. Horvath:
Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures. 518-521 - M. Alper Sahiner, Daniel F. Downey, Steven W. Novak, Joseph C. Woicik, Dario A. Arena:
The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques. 522-526 - A. E. Martínez-Cantón, Miguel García-Rocha, Isaac Hernández-Calderón, R. Ortega-Martínez:
Thermal quenching of the self-activated band of ZnSe: Cl thin films grown by molecular beam epitaxy. 527-530 - C. L. Heng, T. G. Finstad, Y. J. Li, A. E. Gunnæs, A. Olsen, P. Storås:
Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing. 531-535 - T. V. Torchynska, A. Díaz Cano, Sergio Jiménez-Sandoval, M. Dybiec, S. Ostapenko, M. Mynbaeva:
Photoluminescence and Raman spectroscopy in porous SiC. 536-538 - O. Millo, I. Asulin, A. Sharoni, O. Yuli, G. Koren:
The superconductor proximity effect in Au-YBa2Cu3O7-delta bilayer films: the role of order parameter anisotropy. 539-542 - Oscar Blanco-Alonso, E. Martínez, J. Heiras, J. Siqueiros, A. G. Castellanos-Guzmán:
Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films. 543-545