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Publication search results
found 442 matches
- 2023
- Yi Luo, Shahriar Mirabbasi:
A 60fps9.9nJ/frame·pixel CMOS Image Sensor with On-Chip Pixel-wise Conversion Gain Modulation for Per-frame Adaptive DCG-HDR Imaging. VLSI Technology and Circuits 2023: 1-2 - Navid Anjum Aadit, Masoud Mohseni, Kerem Yunus Camsari:
Accelerating Adaptive Parallel Tempering with FPGA-based p-bits. VLSI Technology and Circuits 2023: 1-2 - Ankur Agrawal, Monodeep Kar, Kyu-Hyoun Kim, Sergey V. Rylov, Jinwook Jung, Seiji Munetoh, Kohji Hosokawa, Xin Zhang, Bahman Hekmatshoartabari, Fabio Carta, Martin Cochet, Robert Casatuta, Mingu Kang, Sunil Shukla, Kailash Gopalakrishnan, Leland Chang:
A Switched-Capacitor Integer Compute Unit with Decoupled Storage and Arithmetic for Cloud AI Inference in 5nm CMOS. VLSI Technology and Circuits 2023: 1-2 - Jisan Ahn, Hyun-Su Lee, Kyeongho Eom, Woojoong Jung, Hyung-Min Lee:
A 93.5%-Efficiency 13.56-MHz-Bandwidth Optimal On/Off Tracking Active Rectifier with Fully Digital Feedback-Based Delay Control for Adaptive Efficiency Compensation. VLSI Technology and Circuits 2023: 1-2 - Yuta Aiba, Yusuke Higashi, Hitomi Tanaka, Hiroki Tanaka, Fumie Kikushima, Toshio Fujisawa, Hideko Mukaida, Masayuki Miura, Tomoya Sanuki:
Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability. VLSI Technology and Circuits 2023: 1-2 - Mark Daniel Alea, Ali Safa, Flavio Giacomozzi, Andrea Adami, Inci Rüya Temel, Leandro Lorenzelli, Georges G. E. Gielen:
A Fingertip-Mimicking 12×16 200μm-Resolution e-skin Taxel Readout Chip with per-Taxel Spiking Readout and Embedded Receptive Field Processing. VLSI Technology and Circuits 2023: 1-2 - Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking. VLSI Technology and Circuits 2023: 1-2 - Hiroaki Arimura, S. Brus, Jacopo Franco, Yusuke Oniki, A. Vandooren, T. Conard, B. T. Chan, B. Kannan, M. Samiee, W. Li, P. Deminskyi, E. Shero, J. Bakke, N. Jourdan, G. Alessio Verni, J. W. Maes, M. Givens, Lars-Åke Ragnarsson, Jérôme Mitard, E. Dentoni Litta, N. Horiguchi:
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET. VLSI Technology and Circuits 2023: 1-2 - Gabriele Atzeni, Can Livanelioglu, Lavinia Recchioni, Sina Arjmandpour, Taekwang Jang:
An Energy-Efficient Impedance-Boosted Discrete-Time Amplifier Achieving 0.34 Noise Efficiency Factor and 389 MΩ Input Impedance. VLSI Technology and Circuits 2023: 1-2 - Charles Augustine, Pascal Meinerzhagen, Wootaek Lim, A. Veerabathini, M. Bright, K. Mojjada, Jim Tschanz, Muhammad M. Khellah, Vivek De:
A 2.6 mV/b Resolution, 1.2 GHz Throughput, All-Digital Voltage Droop Monitor Using Coupled Ring Oscillators in Intel 4 CMOS. VLSI Technology and Circuits 2023: 1-2 - Sanghyun Ban, Jangseop Lee, Taehoon Kim, Hyunsang Hwang:
Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications. VLSI Technology and Circuits 2023: 1-2 - Jun-Suk Bang, Dongsu Kim, Young-Hwan Choo, Ik-Hwan Kim, Seungchan Park, Jeongkwang Lee, Sang-Han Lee, Young-Ho Jung, Jae-Young Ko, Sung-Youb Jung, Jae-Yeol Han, Woosik Kim, Ji-Seon Paek, Jongwoo Lee:
5G NR RF PA Supply Modulator Supporting 179ns 0.5-to-5.5V Symbol Power Tracking and Envelope Tracking. VLSI Technology and Circuits 2023: 1-2 - Joydeep Basu, Luigi Fassio, Karim Ali, Massimo Alioto:
Super-Cutoff Analog Building Blocks for pW/Stage Operation and Demonstration of 78-pW Battery-Less Light-Harvested Wake-Up Receiver down to Moonlight. VLSI Technology and Circuits 2023: 1-2 - Joydeep Basu, Sachin Taneja, Viveka Konandur Rajanna, Tianqi Wang, Massimo Alioto:
ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm. VLSI Technology and Circuits 2023: 1-2 - Attilio Belmonte, Shreya Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar:
Lowest IOFF < 3×10-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. VLSI Technology and Circuits 2023: 1-2 - Fabio Bersano, Michele Aldeghi, Eloi Collette, Michele Ghini, Franco De Palma, Fabian Oppliger, Pasquale Scarlino, Floris Braakman, Martino Poggio, Heike Riel, Gian Salis, Rolf Allenspach, Adrian M. Ionescu:
Quantum Dots Array on Ultra-Thin SOI Nanowires with Ferromagnetic Cobalt Barrier Gates for Enhanced Spin Qubit Control. VLSI Technology and Circuits 2023: 1-2 - Eric Beyne, Anne Jourdain, Gerald Beyer:
Nano-Through Silicon Vias (nTSV) for Backside Power Delivery Networks (BSPDN). VLSI Technology and Circuits 2023: 1-2 - Surya Bhattacharya, Vempati Srinivasa Rao:
Multi-Chiplet Heterogeneous Integration Packaging for Semiconductor System Scaling. VLSI Technology and Circuits 2023: 1-4 - N. Breil, B.-C. Lee, J. Avila Avendano, J. Jewell, M. Vellaikal, E. Newman, E. M. Bazizi, Ashish Pal, L. Liu, Oleg Gluschenkov, A. Greene, S. Mochizuki, Nicolas Loubet, Benjamin Colombeau, Bala Haran:
Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETs. VLSI Technology and Circuits 2023: 1-2 - Geoffrey W. Burr, Pritish Narayanan, Stefano Ambrogio, Atsuya Okazaki, Hsinyu Tsai, Kohji Hosokawa, Charles Mackin, Akiyo Nomura, Takeo Yasuda, J. Demarest, Kevin Brew, Victor Chan, Samuel Choi, T. Gordon, T. M. Levin, Alexander M. Friz, Masatoshi Ishii, Yasuteru Kohda, An Chen, Andrea Fasoli, Jose Luquin, Nicole Saulnier, S. Teehan, Ishtiaq Ahsan, Vijay Narayanan:
Phase Change Memory-based Hardware Accelerators for Deep Neural Networks (invited). VLSI Technology and Circuits 2023: 1-2 - Zuocheng Cai, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi:
HZO Scaling and Fatigue Recovery in FeFET with Low Voltage Operation: Evidence of Transition from Interface Degradation to Ferroelectric Fatigue. VLSI Technology and Circuits 2023: 1-2 - Jonathan Chang, Yen-Huei Chen, Gary Chan, Kuo-Cheng Lin, Po-Sheng Wang, Yangsyu Lin, Sevic Chen, Peijiun Lin, Ching-Wei Wu, Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Atul Katoch, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li:
A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications. VLSI Technology and Circuits 2023: 1-2 - Po-Hsuan Chang, Anirban Samanta, Peng Yan, Mingye Fu, Yu Zhang, Mehmet Berkay On, Ankur Kumar, Hyungryul Kang, Il-Min Yi, Dedeepya Annabattuni, David Scott, Robert Patti, Yang-Hang Fan, Yuanming Zhu, S. J. Ben Yoo, Samuel Palermo:
A Sub-500fJ/bit 3D Direct Bond Silicon Photonic Transceiver in 12nm FinFET. VLSI Technology and Circuits 2023: 1-2 - En-Jui Chang, Cheng-Xin Xue, Chetan Deshpande, Gajanan Jedhe, Jenwei Liang, Chih-Chung Cheng, Hung-Wei Lin, Chia-Da Lee, Sushil Kumar, Kim Soon Jway, Zijie Guo, Ritesh Garg, Allen-Cl Lu, Chien-Hung Lin, Meng-Han Hsieh, Tsung-Yao Lin, Chih-Cheng Chen:
A 12-nm 0.62-1.61 mW Ultra-Low Power Digital CIM-based Deep-Learning System for End-to-End Always-on Vision. VLSI Technology and Circuits 2023: 1-2 - Wen-Chieh Chen, S.-H. Chen, Anabela Veloso, Kateryna Serbulova, Geert Hellings, Guido Groeseneken:
Upcoming Challenges of ESD Reliability in DTCO with BS-PDN Routing via BPRs. VLSI Technology and Circuits 2023: 1-2 - Xi Chen, Jiaxiang Feng, Aly Shoukry, Xin Zhang, Raveesh Magod, Nachiket V. Desai, Jie Gu:
Proactive Power Regulation with Real-time Prediction and Fast Response Guardband for Fine-grained Dynamic Voltage Droop Mitigation on Digital SoCs. VLSI Technology and Circuits 2023: 1-2 - Song Chen, Chiao Liu, Lyle Bainbridge, Qing Chao, Ramakrishna Chilukuri, Wei Gao, Andrew P. Hammond, Tsung-Hsun Tsai, Ken Miyauchi, Isao Takayanagi, Masato Nagamatsu, Hirofumi Abe, Kazuya Mori, Masayuki Uno, Toshiyuki Isozaki, Rimon Ikeno, Hsin-Li Chen, Chih-Hao Lin, Wen-Chien Fu, Shou-Gwo Wuu:
A 3.96μm, 124dB Dynamic Range, 6.2mW Stacked Digital Pixel Sensor with Monochrome and Near-Infrared Dual-Channel Global Shutter Capture. VLSI Technology and Circuits 2023: 1-2 - Hsiang-Wen Chen, Seungjong Lee, Michael P. Flynn:
A 0.024mm² 84.2dB-SNDR 1MHz-BW 3rd-Order VCO-Based CTDSM with NS-SAR Quantizer (NSQ VCO CTDSM). VLSI Technology and Circuits 2023: 1-2 - Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, Min-Hung Lee, Chee Wee Liu:
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. VLSI Technology and Circuits 2023: 1-2 - H.-L. Chiang, Richard A. Hadi, J.-F. Wang, H.-C. Han, J.-J. Wu, H.-H. Hsieh, J.-J. Horng, W.-S. Chou, B.-S. Lien, C.-H. Chang, Y.-C. Chen, Yeong-Her Wang, T.-C. Chen, J.-C. Liu, Y.-C. Liu, Meng-Hsueh Chiang, K.-H. Kao, B. Pulicherla, J. Cai, C.-S. Chang, K.-W. Su, K.-L. Cheng, T.-J. Yeh, Y.-C. Peng, C. Enz, Mau-Chung Frank Chang, M.-F. Chang, H.-S. Philip Wong, Iuliana P. Radu:
How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology. VLSI Technology and Circuits 2023: 1-2
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