"Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D ..."

Sanghyun Ban et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185213

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Sanghyun Ban, Jangseop Lee, Taehoon Kim, Hyunsang Hwang:
Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications. VLSI Technology and Circuits 2023: 1-2

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