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Takaaki Nakazato
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2020 – today
- 2024
- [j2]Yumito Aoyagi
, Koji Nii
, Makoto Yabuuchi, Tomotaka Tanaka
, Yuichiro Ishii, Yoshiaki Osada
, Takaaki Nakazato, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48-1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking. IEEE J. Solid State Circuits 59(4): 1225-1234 (2024) - 2023
- [c3]Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka
, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking. VLSI Technology and Circuits 2023: 1-2 - [c2]Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications. VLSI Technology and Circuits 2023: 1-2
2000 – 2009
- 2009
- [c1]Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Yuki Fujimura, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe:
A process-variation-tolerant dual-power-supply SRAM with 0.179µm2 Cell in 40nm CMOS using level-programmable wordline driver. ISSCC 2009: 458-459 - 2005
- [j1]Toru Asano, Joel Silberman, Sang H. Dhong, Osamu Takahashi, Michael White, Scott R. Cottier, Takaaki Nakazato, Atsushi Kawasumi, Hiroshi Yoshihara:
Low-Power Design Approach of 11FO4 256-Kbyte Embedded SRAM for the Synergistic Processor Element of a Cell Processor. IEEE Micro 25(5): 30-38 (2005)
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last updated on 2024-05-08 21:51 CEST by the dblp team
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