"Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology."

Yannick Rey-Tauriac et al. (2005)

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DOI: 10.1016/J.MICROREL.2005.07.019

access: closed

type: Journal Article

metadata version: 2023-09-30

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Yannick Rey-Tauriac, J. Badoc, B. Reynard, Raúl Andrés Bianchi, D. Lachenal, Alain Bravaix:
Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. Microelectron. Reliab. 45(9-11): 1349-1354 (2005)

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