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ORCIDBin Gao 0006
Person information
- affiliation: Tsinghua University, Institute of Microelectronics, Beijing, China
- affiliation (PhD 2013): Peking University, Institute of Microelectronics, Beijing, China
Other persons with the same name
- Bin Gao — disambiguation page
- Bin Gao 0001 — Microsoft Research Asia, Beijing, China
- Bin Gao 0002
![[0000-0003-1092-7785]](https://dblp.uni-trier.de/img/orcid-mark.12x12.png "0000-0003-1092-7785")
— AlbaNova University Center, Department of Theoretical Chemistry, Stockholm, Sweden - Bin Gao 0003 — University of Electronic Science and Technology of China, School of Automation Engineering, Chengdu (and 1 more)
- Bin Gao 0004 — Huaiyin Institute of Technology, Faculty of Computer and Software Engineering, Huaian, China (and 2 more)
- Bin Gao 0005 — Beijing University of Technology, School of Life Science and BioEngineering, China
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2020 – today
- 2021
[j6]Yue Xi, Bin Gao, Jianshi Tang, An Chen, Meng-Fan Chang, Xiaobo Sharon Hu, Jan Van der Spiegel, He Qian, Huaqiang Wu:
In-memory Learning with Analog Resistive Switching Memory: A Review and Perspective. Proc. IEEE 109(1): 14-42 (2021)- 2020
- [c15]Weier Wan, Rajkumar Kubendran, Sukru Burc Eryilmaz, Wenqiang Zhang, Yan Liao, Dabin Wu, Stephen R. Deiss, Bin Gao, Priyanka Raina, Siddharth Joshi, Huaqiang Wu, Gert Cauwenberghs, H.-S. Philip Wong:
33.1 A 74 TMACS/W CMOS-RRAM Neurosynaptic Core with Dynamically Reconfigurable Dataflow and In-situ Transposable Weights for Probabilistic Graphical Models. ISSCC 2020: 498-500 - [c14]Qi Liu, Bin Gao, Peng Yao, Dong Wu, Junren Chen, Yachuan Pang, Wenqiang Zhang, Yan Liao, Cheng-Xin Xue, Wei-Hao Chen, Jianshi Tang, Yu Wang, Meng-Fan Chang, He Qian, Huaqiang Wu:
33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing. ISSCC 2020: 500-502
2010 – 2019
- 2019
- [j5]Bin Gao, Xin Liu, Ya-Xiang Yuan:
Parallelizable Algorithms for Optimization Problems with Orthogonality Constraints. SIAM J. Sci. Comput. 41(3): A1949-A1983 (2019) - [j4]Panni Wang, Feng Xu, Bo Wang, Bin Gao, Huaqiang Wu, He Qian, Shimeng Yu:
Three-Dimensional nand Flash for Vector-Matrix Multiplication. IEEE Trans. Very Large Scale Integr. Syst. 27(4): 988-991 (2019) - [c13]Wenqiang Zhang, Xiaochen Peng, Huaqiang Wu, Bin Gao, Hu He, Youhui Zhang, Shimeng Yu, He Qian:
Design Guidelines of RRAM based Neural-Processing-Unit: A Joint Device-Circuit-Algorithm Analysis. DAC 2019: 140 - [c12]Huaqiang Wu, Meiran Zhao, Yuyi Liu, Peng Yao, Yue Xi, Xinyi Li, Wei Wu, Qingtian Zhang, Jianshi Tang, Bin Gao, He Qian:
Reliability Perspective on Neuromorphic Computing Based on Analog RRAM. IRPS 2019: 1-4 - [c11]Yachun Pang, Bin Gao, Dong Wu, Shengyu Yi, Qi Liu, Wei-Hao Chen, Ting-Wei Chang, Wei-En Lin, Xiaoyu Sun, Shimeng Yu, He Qian, Meng-Fan Chang, Huaqiang Wu:
A Reconfigurable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source With <6×10-6 Native Bit Error Rate. ISSCC 2019: 402-404 - 2018
- [j3]Qingtian Zhang, Huaqiang Wu, Peng Yao, Wenqiang Zhang, Bin Gao, Ning Deng, He Qian:
Sign backpropagation: An on-chip learning algorithm for analog RRAM neuromorphic computing systems. Neural Networks 108: 217-223 (2018) - 2017
- [j2]Bo Wang, Bin Gao, Huaqiang Wu, He Qian:
New structure with SiO2-gate-dielectric select gates in vertical-channel three-dimensional (3D) NAND flash memory. Microelectron. Reliab. 78: 80-84 (2017) - [j1]Huaqiang Wu, Xiao Hu Wang, Bin Gao, Ning Deng, Zhichao Lu, Brent Haukness, Gary Bronner, He Qian:
Resistive Random Access Memory for Future Information Processing System. Proc. IEEE 105(9): 1770-1789 (2017) - [c10]Shan Wang, Huaqiang Wu, Bin Gao, Ning Deng, Dong Wu, He Qian:
Optimization of writing scheme on 1T1R RRAM to achieve both high speed and good uniformity. ESSDERC 2017: 14-17 - [c9]Zixuan Chen, Huaqiang Wu, Bin Gao, Peng Yao, Xinyi Li, He Qian:
Neuromorphic Computing based on Resistive RAM. ACM Great Lakes Symposium on VLSI 2017: 311-315 - 2016
- [c8]Jinfeng Kang, Peng Huang, Z. Chen, Y. D. Zhao, C. Liu, R. Z. Han, L. F. Liu, X. Y. Liu, Y. Y. Wang, Bin Gao:
Physical understanding and optimization of resistive switching characteristics in oxide-RRAM. ESSDERC 2016: 154-159 - [p1]Huaqiang Wu, Yan Liao, Bin Gao, Debanjan Jana, He Qian:
RRAM Cross-Point Arrays. 3D Flash Memories 2016: 223-260 - [i1]Haitong Li, Peng Huang, Bin Gao, Xiaoyan Liu, Jinfeng Kang, H.-S. Philip Wong:
Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays. CoRR abs/1606.07457 (2016) - 2015
- [c7]Jinfeng Kang, H. T. Li, Peng Huang, Z. Chen, Bin Gao, X. Y. Liu, Z. Z. Jiang, H.-S. Philip Wong:
Modeling and design optimization of ReRAM. ASP-DAC 2015: 576-581 - [c6]H. Li, Z. Jiang, Peng Huang, Y. Wu, H.-Y. Chen, Bin Gao, X. Y. Liu, Jinfeng Kang, H.-S. Philip Wong:
Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model. DATE 2015: 1425-1430 - [c5]Jinfeng Kang, Bin Gao, Peng Huang, L. F. Liu, X. Y. Liu, H. Y. Yu, Shimeng Yu, H.-S. Philip Wong:
RRAM based synaptic devices for neuromorphic visual systems. DSP 2015: 1219-1222 - [c4]Peng Yao, Huaqiang Wu, Bin Gao, Guo Zhang, He Qian:
The effect of variation on neuromorphic network based on 1T1R memristor array. NVMTS 2015: 1-3 - 2014
- [c3]Peng Huang, Bing Chen, Haitong Li, Zhe Chen, Bin Gao, Xiaoyan Liu, Jinfeng Kang:
Parameters extraction on HfOX based RRAM. ESSDERC 2014: 250-253 - [c2]Jinfeng Kang, Bin Gao, Bing Chen, Peng Huang, F. F. Zhang, Xiaoyan Liu, Hong-Yu Chen, Zizhen Jiang, H.-S. Philip Wong, Shimeng Yu:
Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture. ISCAS 2014: 417-420 - [c1]Shimeng Yu, Yexin Deng, Bin Gao, Peng Huang, Bing Chen, Xiaoyan Liu, Jinfeng Kang, Hong-Yu Chen, Zizhen Jiang, H.-S. Philip Wong:
Design guidelines for 3D RRAM cross-point architecture. ISCAS 2014: 421-424
Coauthor Index
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