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ORCIDGenquan Han
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2020 – today
- 2025
[j22]Chenyu Liu, Yibo Wang, Wenhui Xu, Shuqi Huang, Chunxiao Yu, Zeyu Yang, Xiaole Jia, Xiaoxi Li, Bochang Li, Zheng-Dong Luo, Cizhe Fang, Yan Liu, Tiangui You, Xin Ou, Genquan Han:
Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3-on-SiC substrates: evidence from pulsed measurements. Sci. China Inf. Sci. 68(1) (2025)- [j21]Tongtong Wang, Yong Zhang, Danyang Yao, Zhi Jiang, Dongxin Tan, Jie Wen, Qiyu Yang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han:
Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity. Sci. China Inf. Sci. 68(2) (2025) - [j20]Jiacheng Xu, Jiayi Zhao, Hongrui Zhang, Haoji Qian, Jiani Gu, Bowen Chen, Gaobo Lin, Rongzong Shen, Xinda Song, Huan Liu, Yian Ding, Minglei Ma, Miaomiao Zhang, Xiao Yu, Bing Chen, Ran Cheng, Gaobo Xu, Huaxiang Yin, Yan Liu, Jiajia Chen, Chengji Jin, Genquan Han:
An AND-type 1T-FeFET array with robust write and read operations. Sci. China Inf. Sci. 68(2) (2025) - [j19]Jie Wen, Fei Xiao, Zheng-Dong Luo, Dongxin Tan, Xuetao Gan, Dawei Zhang, Zhufei Chu, Yinshui Xia, Yan Liu, Genquan Han:
Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors. Sci. China Inf. Sci. 68(5) (2025) - 2024
- [j18]Huan Liu, Qiyu Yang, Chengji Jin, Jiajia Chen, Lulu Chou, Xiao Yu, Yan Liu, Genquan Han:
Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci. China Inf. Sci. 67(1) (2024) - [j17]Fan Zhang, Zhaohao Zhang, Jiaxin Yao, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Huan Liu, Genquan Han, Yan Liu, Huaxiang Yin:
Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs. Sci. China Inf. Sci. 67(1) (2024) - [j16]Yang Li, Danyang Yao, Yan Liu, Zhi Jiang, Ruiqing Wang, Xu Ran, Jiuren Zhou, Qikun Wang, Guoqiang Wu, Genquan Han:
Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition. Sci. China Inf. Sci. 67(5) (2024) - [j15]Qiyu Yang, Zheng-Dong Luo, Fei Xiao, Junpeng Zhang, Dawei Zhang
, Dongxin Tan, Xuetao Gan, Yan Liu, Zhufei Chu, Yinshui Xia, Genquan Han:
Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors. Sci. China Inf. Sci. 67(6) (2024) - [j14]Yong Zhang, Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Qiao Zhang, Yu Zhang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han:
Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic. Sci. China Inf. Sci. 67(9) (2024) - [j13]Ruoying Kanyang, Cizhe Fang, Yibo Wang, Xiaoxi Li, Xiangyu Zeng, Yan Liu, Yue Hao, Genquan Han:
Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum. Sci. China Inf. Sci. 67(11) (2024) - [j12]Zhe Wang, Yan Liu, Jiuren Zhou, Genquan Han:
Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories. Microelectron. J. 143: 106030 (2024) - [j11]Wei Mao, Fuyi Li, Jun Liu, Rui Xiao, Kejie Huang, Yongfu Li, Hao Yu, Yan Liu, Genquan Han:
A Low-Power Charge-Domain Bit-Scalable Readout System for Fully-Parallel Computing-in-Memory Accelerators. IEEE Trans. Circuits Syst. II Express Briefs 71(6): 2916-2920 (2024) - [c8]Xinze Li, Yiqin Zeng, Yuxuan Wu, Ying Sun, Junru Qu, Chengji Jin, Jiani Gu, Rongzong Shen, Gaobo Lin, Dawei Gao, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han:
Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications. IRPS 2024: 1-5 - [c7]Junru Qu, Dong Liu, Bing Chen, Ying Sun, Xinze Li, Chengji Jin, Jiajia Chen, Haoji Qian, Rongzong Shen, Xiao Yu, Dawei Gao, Ran Cheng, Genquan Han:
Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET. IRPS 2024: 70 - [c6]Fuyi Li, Yu Xia, Shuai Xiao, Pengcheng Yang, Xingyu Zhu, Bo Li, Jiuren Zhou, Genquan Han, Wei Mao:
Accurate Charge-Domain Bootstrapped Computing-in-Memory SRAM Design with Wide Programmable Output Voltage Range. SOCC 2024: 1-6 - 2023
- [j10]Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang:
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. Adv. Intell. Syst. 5(11) (2023) - [j9]Wenwu Xiao, Yue Peng, Yan Liu, Huifu Duan, Fujun Bai, Bing Yu, Qiwei Ren, Xiao Yu, Genquan Han:
Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory. Sci. China Inf. Sci. 66(4) (2023) - [j8]Fenning Liu, Yue Peng, Wenwu Xiao, Yan Liu, Xiao Yu, Genquan Han:
Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor. Sci. China Inf. Sci. 66(6) (2023) - [j7]Huan Liu, Jiajia Chen, Chengji Jin, Xiao Yu, Yan Liu, Genquan Han:
Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics. Sci. China Inf. Sci. 66(10) (2023) - [j6]Xiaole Jia, Yibo Wang, Jinyu Yang, Yan Liu, Yue Hao, Genquan Han:
A compact model of DC I-V characteristics for depleted Ga2O3 MOSFETs. Microelectron. J. 140: 105920 (2023) - [c5]Yiqin Zeng, Zhetao Ding, Xueyang Li, Minglei Ma, Yue Peng, Rongzong Shen, Gaobo Lin, Chengji Jin, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han:
Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology. ESSDERC 2023: 85-88 - [c4]Jiajia Chen, Jiani Gu, Zhi Gong, Chengji Jin, Huan Liu, Xiao Yu, Genquan Han:
Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors. ICICDT 2023: 127-130 - 2022
- [j5]Yagong Nan, Genquan Han:
4H-SiC floating junction Schottky barrier diode with compensation layer of engineered cathode structure: Cone-shaped electric field, current density waveform, and applications. Microelectron. J. 125: 105472 (2022) - [c3]Huan Liu, Jiajia Chen, Chengji Jin, Yan Liu, Genquan Han, Xiao Yu:
Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling. ICICDT 2022: 1-4 - [c2]Lulu Chou, Xiao Yu, Huan Liu, Yan Liu, Genquan Han, Yue Hao:
Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations. ICICDT 2022: 12-15 - [c1]Xinze Li, Ying Sun, Jing Wan, Bing Chen, Ran Cheng, Genquan Han:
Machine Learning Method for Accurate Analysis of Complicated Low Temperature Random Telegraph Noise. ICICDT 2022: 20-23 - 2021
- [j4]Huan Liu, Genquan Han, Jiuren Zhou, Yan Liu, Yue Hao:
High mobility germanium-on-insulator p-channel FinFETs. Sci. China Inf. Sci. 64(4) (2021) - [j3]Yue Hao, Shuiying Xiang, Genquan Han, Jincheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang, Hong Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, Yimao Cai, Jian Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guoping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, Xihua Zou, Lianshan Yan, Ming Li:
Recent progress of integrated circuits and optoelectronic chips. Sci. China Inf. Sci. 64(10) (2021) - [j2]Shuiying Xiang, Zhenxing Ren, Ziwei Song, Yahui Zhang, Xingxing Guo, Genquan Han, Yue Hao:
Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification. IEEE Trans. Neural Networks Learn. Syst. 32(6): 2494-2505 (2021) - 2020
- [j1]Shuiying Xiang, Yanan Han, Xingxing Guo, Aijun Wen, Genquan Han, Yue Hao:
Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection. Sci. China Inf. Sci. 63(6) (2020)
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