BibTeX record conf/essderc/KangHCZLHLLWG16

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@inproceedings{DBLP:conf/essderc/KangHCZLHLLWG16,
  author    = {Jinfeng Kang and
               Peng Huang and
               Z. Chen and
               Y. D. Zhao and
               C. Liu and
               R. Z. Han and
               L. F. Liu and
               X. Y. Liu and
               Y. Y. Wang and
               Bin Gao},
  title     = {Physical understanding and optimization of resistive switching characteristics
               in oxide-RRAM},
  booktitle = {46th European Solid-State Device Research Conference, {ESSDERC} 2016,
               Lausanne, Switzerland, September 12-15, 2016},
  pages     = {154--159},
  publisher = {{IEEE}},
  year      = {2016},
  url       = {https://doi.org/10.1109/ESSDERC.2016.7599610},
  doi       = {10.1109/ESSDERC.2016.7599610},
  timestamp = {Wed, 16 Oct 2019 14:14:50 +0200},
  biburl    = {https://dblp.org/rec/conf/essderc/KangHCZLHLLWG16.bib},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
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