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ORCIDMicroelectronics Journal, Volume 34
Volume 34, Number 1, January 2003
- Régis Leveugle, Glenn H. Chapman:
Special section on defect and fault tolerance in VLSI systems. 1
- Farzin Karimi, V. Swamy Irrinki, T. Crosby, Nohpill Park, Fabrizio Lombardi:
Parallel testing of multi-port static random access memories. 3-21 - Cecilia Metra, Stefano Di Francescantonio, Michele Favalli
, Bruno Riccò:
Scan flip-flops with on-line testing ability with respect to input delay and crosstalk faults. 23-29 - Kaijie Wu, Piyush Mishra, Ramesh Karri:
Concurrent error detection of fault-based side-channel cryptanalysis of 128-bit RC6 block cipher. 31-39 - Daniel Gil, Joaquin Gracia, Juan Carlos Baraza, Pedro J. Gil:
Study, comparison and application of different VHDL-based fault injection techniques for the experimental validation of a fault-tolerant system. 41-51 - Pierluigi Civera, Luca Macchiarulo, Maurizio Rebaudengo, Matteo Sonza Reorda, Massimo Violante:
New techniques for efficiently assessing reliability of SOCs. 53-61 - Kwang-Su Lee, Toh-Ming Lu, Xicheng Zhang:
The measurement of the dielectric and optical properties of nano thin films by THz differential time-domain spectroscopy. 63-69 - H. G. Yang, Yi Shi, L. Pu, S. L. Gu, B. Shen, P. Han, R. Zhang, Y. D. Zhang:
Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory. 71-75 - N. Kaushik, A. Kranti, Mridula Gupta, R. S. Gupta:
Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor. 77-83 - Feng Huang, Xubang Shen, Xuecheng Zou, Chaoyang Chen:
Analog signal generator for BIST of wideband IF signals bandpass sigma-delta modulator. 85-91 - Mile K. Stojcev:
Data structures with C++ using STL, 2/e: William Ford, William Top (Eds.); Prentice Hall, Upper Saddle River, NJ, 2002, 1037 pages, hardcover, ISBN 0-13-085850-1, plus XXVI. 93-94
Volume 34, Number 2, February 2003
- Magdalena Kadlecíková, Juraj Breza, Marián Veselý, I. Cerven:
A study of synthetic sapphire by photoluminescence and X-ray diffraction. 95-97 - Paavo Jalonen:
A new concept® for making fine line substrate for active component in polymer. 99-107 - Y. S. Zheng, Q. Guo, Y. J. Su, P. D. Foo:
Polymer residue chemical composition analysis and its effect on via contact resistance in dual damascene copper interconnects process integration. 109-113 - Siu Man Lee, D. C. Dyer, J. W. Gardner:
Design and optimisation of a high-temperature silicon micro-hotplate for nanoporous palladium pellistors. 115-126 - Wu-Yih Uen, Shan-Ming Lan, Sen-Mao Liao, Jing-Ting Chiou:
Generation lifetime improvement on MOS capacitor by fast neutron enhanced intrinsic gettering technique. 127-131 - Sergio Saponara, Luca Fanucci:
VLSI design investigation for low-cost, low-power FFT/IFFT processing in advanced VDSL transceivers. 133-148 - Francis K. Rault, Ahmad Zahedi:
Computational analysis of the refractive index of multiple quantum wells for QWSC applications. 149-158 - Mile K. Stojcev:
Analog Design for CMOS VLSI Systems: Franco Maloberti (Ed.); Kluwer Academic Publishers, Dordrecht, 2001, 374 pages, plus XIII, hardcover, ISBN 0-7923-7550-5. 161
Volume 34, Number 3, March 2003
- Yogendra K. Joshi, Suresh V. Garimella:
Thermal challenges in next generation electronic systems. 169 - Márta Rencz:
New possibilities in the thermal evaluation, offered by transient testing. 171-177 - Liwei Lin:
Thermal challenges in MEMS applications: phase change phenomena and thermal bonding processes. 179-185 - M. J. Rightley, C. P. Tigges, R. C. Givler, C. V. Robino, J. J. Mulhall, P. M. Smith:
Innovative wick design for multi-source, flat plate heat pipes. 187-194 - Osamu Suzuki, Yogendra K. Joshi, Wataru Nakayama:
Dynamics of a liquid plug in a capillary duct powered by vapor explosion. 195-200 - Taofang Zeng, Gang Chen:
Nonequilibrium electron and phonon transport and energy conversion in heterostructures. 201-206 - M. A. Baig, M. Z. H. Khandkar, Jamil A. Khan, M. A. Khan, G. Simin, H. Wang:
A study of temperature field in a GaN heterostructure field-effect transistor. 207-214 - J. P. Gwinn, R. L. Webb:
Performance and testing of thermal interface materials. 215-222 - Saeed Moghaddam, M. Rada, Amir Shooshtari, M. Ohadi, Y. Joshi:
Evaluation of analytical models for thermal analysis and design of electronic packages. 223-230
Volume 34, Number 4, April 2003
- Svetlana V. Koshevaya, Volodymyr Grimalsky, J. Escobedo-Alatorre, Margarita Tecpoyotl-Torres:
Superheterodyne amplification of sub-millimeter electromagnetic waves in an n-GaAs film. 231-235 - Navab Singh, Moitreyee Mukherjee-Roy, Sohan Singh Mehta:
Defocusing image to pattern contact holes using attenuated phase shift masks. 237-245 - S. Belhardj, S. Mimouni, Abdelkader Saïdane, M. Benzohra:
Using microchannels to cool microprocessors: a transmission-line-matrix study. 247-253 - Gady Golan, Alex Axelevitch, B. Sigalov, B. Gorenstein:
Metal-insulator phase transition in vanadium oxides films. 255-258 - H. Zhou, F. G. Shi, B. Zhao:
Thickness dependent dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films: modeling and experiments. 259-264 - Francis K. Rault, Ahmad Zahedi:
A probabilistic approach to determine radiative recombination carrier lifetimes in quantum well solar cells. 265-270 - A. Bchetnia, Ahmed Rebey, B. El Jani, J. Cernogora, J.-L. Fave:
New photoluminescence lines in Vanadium doped GaAs grown by MOVPE. 271-274 - F. Mailly, Augustin Martinez, Alain Giani, Frédérique Pascal-Delannoy, Alexandre Boyer:
Design of a micromachined thermal accelerometer: thermal simulation and experimental results. 275-280 - Hongguo Zhang, Praka Punchaipet, E. G. Bruce, W. M. Robert, Longtu Li, Ji Zhou, Yongli Wang, Zhenxing Yue, Zhilun Gui:
Microstructure study and hyper frequency electromagnetic characterization of novel hexagonal compounds. 281-287 - Enfeng Liu, Ruqi Han, Erping Li, Ping Bai:
A novel hydrodynamic model for nanoscale devices simulation. 289-296 - Xuening Li, Alex Q. Huang, Yuxin Li:
Analytical GTO turn-off model under snubberless turn-off condition. 297-304 - Tian Yuan, Soo-Jin Chua, Yixin Jin:
Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors. 305-312 - Mile K. Stojcev:
System-on-a-Chip: Design and Test: Rochit Rajsuman (Ed.); Artech House, Boston, 2000, 277 pages, plus XIII, Hardcover, ISBN 1-58053-107-5, GBP61.00. 313-314
Volume 34, Numbers 5-8, May - August 2003
- Mohamed Henini:
Introduction to the low dimensional structures and devices conference (LDSD'2002) Fortaleza, Brazil: December 8-13, 2002. 321-322 - Dieter Bimberg, Christian Ribbat:
Quantum dots: lasers and amplifiers. 323-328 - Raphael Tsu:
Challenges in the implementation of Nanoelectronics. 329-332 - Mohamed Henini:
Self-assembled quantum dots on GaAs for optoelectronic applications. 333-336 - A. T. da Cunha Lima, E. V. Anda:
Spin transport through quantum dots. 337-339 - Hideki Hasegawa:
Formation of III-V low dimensional structures and their applications to intelligent quantum chips. 341-345 - K. L. Janssens, Bart Partoens, François M. Peeters:
Type-II quantum dots in magnetic fields: excitonic behaviour. 347-350 - J. Misiewicz, Grzegorz Sek, R. Kudrawiec, K. Ryczko, D. Gollub, Johann Peter Reithmaier, Alfred Forchel:
Photomodulation spectroscopy applied to low-dimensional semiconductor structures. 351-353 - Pablo O. Vaccaro, Alexander Vorobev, Nethaji Dharmarasu, Thomas Fleischmann, Jose M. Zanardi Ocampo, Shanmugam Saravanan, Kazuyoshi Kubota, Tahito Aida:
Lateral p-n junctions for high-density LED arrays. 355-357 - Samson Mil'shtein, Peter Ersland, Shivarajiv Somisetty, C. Gil:
p-HEMT with tailored field. 359-361 - T. P. Ma:
Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition. 363-370 - Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon:
A new type of quantum wells: stacking faults in silicon carbide. 371-374 - Fátima M. Cerqueira, Margarita Stepikhova, Maria Losurdo, M. M. Giangregorio, Eduardo Alves, Teresa Monteiro, M. J. Soares, C. Boemare:
Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films. 375-378 - Z. G. Wang, J. Wu:
Controllable growth of semiconductor nanometer structures. 379-382 - M. Razeghi, S. Slivken, J. Yu, A. Evans, J. David:
High performance quantum cascade lasers at lambda ~6µm. 383-385 - Taro Arakawa, Kunio Tada, R. Iino, Tatsuya Suzuki, Joo-Hyong Noh, Nobuo Haneji, H. Feng:
Electrorefractive properties of modified five-layer asymmetric coupled quantum well (FACQW). 387-390 - G. Sun, Richard A. Soref:
Si-based quantum staircase terahertz lasers. 391-393 - Viola Lemos:
Lattice dynamics in wide band gap materials based superlattices. 395-399 - S. E. Huq, N. S. Xu:
Electron emission from nanostructures. 401-404 - Manijeh Razeghi, Aaron Gin, Yajun Wei, Junjik Bae, Jongbum Nah:
Quantum sensing using Type II InAs/GaSb superlattice for infrared detection. 405-410 - Maxim Ryzhii, V. Ryzhii, V. Mitin:
Electric-field and space-charge distributions in InAs/GaAs quantum-dot infrared photodetectors: ensemble Monte Carlo particle modeling. 411-414 - C. Nì. Allen, P. J. Poole, P. Marshall, S. Raymond, S. Fafard:
Tunable InAs quantum-dot lasers grown on (100) InP. 415-417 - F. Patella, S. Nufris, Fabrizio Arciprete, M. Fanfoni, Ernesto Placidi, A. Sgarlata, Adalberto Balzarotti:
Structural study of the InAs quantum-dot nucleation on GaAs(001). 419-422 - B. Kaestner, Jörg Wunderlich, David G. Hasko, D. A. Williams:
Quasi-lateral 2DEG-2DHG junction in AlGaAs/GaAs. 423-425 - Klaus Lischka:
Light emission from cubic InGaN nanostructures. 427-433 - P. Javorka, A. Alam, Michel Marso, Mike Jean Wolter, Ján Kuzmík, A. Fox, M. Heuken, Peter Kordos:
Material and device issues of AlGaN/GaN HEMTs on silicon substrates. 435-437 - A. Pawlis, A. Khartchenko, O. Husberg, Donat Josef As, Klaus Lischka, D. Schikora:
Large room temperature Rabi-splitting in II-VI semiconductor microcavity quantum structures. 439-442 - Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr:
Stochastic interpretation of the Wigner transport in nanostructures. 443-445 - Pablo O. Vaccaro, Kazuyoshi Kubota, Thomas Fleischmann, Shanmugam Saravanan, Tahito Aida:
Valley-fold and mountain-fold in the micro-origami technique. 447-449 - F. L. de Almeida, L. C. de Carvalho, H. W. Leite Alves, J. L. A. Alves:
Vibrational spectra of adsorbed hydrogen on GaN(001) surfaces. 451-453 - J. C. González, M. I. N. da Silva, K. L. Bunker, A. D. Batchelor, P. E. Russell:
Electrical characterization of InGaN quantum well p-n heterostructures. 455-457 - N. Shtinkov, Patrick Desjardins, R. A. Masut:
Lateral confinement of carriers in ultrathin semiconductor quantum wells. 459-462 - J. Z. Wu, S. H. Yun, A. Dibos, Do-Kyung Kim, M. Tidrow:
Fabrication and characterization of boron-related nanowires. 463-470 - Fanyao Qu, N. O. Dantas, S. P. Daud, A. M. Alcalde, C. G. Almeida, O. O. Diniz Neto, Paulo César de Morais:
The effects of external magnetic field on the surface charge distribution of spherical nanoparticles. 471-473 - I. C. da Cunha Lima:
Spin-polarized transport in low-dimensional systems. 475-480 - Solange B. Fagan, R. Mota, Antônio J. R. da Silva, A. Fazzio:
Electronic and magnetic properties of iron chains on carbon nanotubes. 481-484 - Jean-Pierre Leburton, Satyadev Nagaraja, Philippe Matagne, Richard M. Martin:
Spintronics and exchange engineering in coupled quantum dots. 485-489 - A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, D. A. Livshits, Y. M. Shernyakov, M. V. Maximov, N. A. Pihtin, I. S. Tarasov, V. M. Ustinov:
High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells. 491-493 - Silvete Guerini, Paulo Piquini:
Theoretical investigation of TiB2 nanotubes. 495-497 - M. Mendoza, P. A. Schulz:
Effects of a perturbative spike in open quantum dots: suppression of the conductance and discreet states imaging. 499-502 - M. S. Vasconcelos, P. W. Mauriz, Eudenílson L. Albuquerque:
Impurity binding energies in semiconductor Fibonacci superlattices. 503-505 - T. A. S. Pereira, J. A. K. Freire, V. N. Freire, G. A. Farias, Luísa Maria Ribeiro Scolfaro, J. R. Leite, Eronides Felisberto da Silva Júnior:
Confined excitons in Si/SrTiO3 quantum wells. 507-509 - Jane M. G. Laranjeira, Eronides Felisberto da Silva Júnior, Walter M. de Azevedo, Elder A. de Vasconcelos, Helen J. Khoury, Renata A. Simão, Carlos A. Achete:
AFM studies of polyaniline nanofilms irradiated with gamma rays. 511-513 - H. Bidadi, S. Sobhanian, M. Mazidi, Sh. Hasanli, S. Khorram:
The peculiarities of mechanical bending of silicon wafers after diverse manufacturing operations. 515-519 - L. Zamora-Peredo, A. Guillen-Cervantes, Z. Rivera-Alvarez, M. López-López, Ángel Rodríguez-Vázquez, Víctor-Hugo Méndez-García:
Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures. 521-523 - S. K. Han, Y. I. Choi, S. K. Chung:
An analytic model for breakdown voltage of gated diodes. 525-527 - A. N. Borges, F. A. P. Osório, P. C. M. Machado:
Plasmon-LO phonon interaction effects on the intrasubband and intersubband transition energies in a quantum well wire. 529-531 - A. Vercik, A. N. Faigon:
Boltzmann transport equation based supply function for tunnelling from inversion layers. 533-535 - Junji Haruyama, K. Takazawa, S. Miyadai, A. Takeda, N. Hori, I. Takesue, Y. Kanda, N. Sugiyama:
Proximity-induced superconductivity and its re-entrance effect in niobium/multi-walled carbon nanotube junctions. 537-539 - Tetyana V. Torchynska, G. Polupan, J. Palacios Gomez, A. V. Kolobov:
Photoluminescence of Ge nano-crystallites embedded in silicon oxide. 541-543 - M. Machado, R. Mota, Paulo Piquini:
Electronic properties of BN nanocones under electric fields. 545-547 - Xiaojun Wang, H. R. Zheng, Dongdong Jia, S. H. Huang, R. S. Meltzer, M. J. Dejneka, W. M. Yen:
Spectroscopy of different sites in Pr3+-doped oxyfluoride glass ceramics. 549-551 - Ana Champi, R. G. Lacerda, F. C. Marques:
Thermomechanical properties of the amorphous carbon nitride thin films. 553-555 - Paulo Jorge Ribeiro Montes, Mario Ernesto Giroldo Valerio, Marcelo Andrade Macêdo, Frederico Cunha, José Marcos Sasaki:
Yttria thin films doped with rare earth for applications in radiation detectors and thermoluminescent dosimeters. 557-559 - C. T. Meneses, M. A. Macêdo, F. C. Vicentin:
LixMn2O4 thin films characterization by X-ray, electrical conductivity and XANES. 561-563 - J. V. A. Santos, M. A. Macêdo, Frederico Cunha, José Marcos Sasaki, J. G. S. Duque:
BaFe12O19 thin film grown by an aqueous sol-gel process. 565-567 - L. Cândido, G.-Q. Hai:
Correlation energy of coupled double electron layers. 569-570 - M. I. N. da Silva, J. C. González, P. E. Russell:
Cross-sectional Scanning Probe Microscopy of GaN-based p-n heterostructures. 571-573 - S. V. Danylyuk, Svetlana A. Vitusevich, B. Podor, A. E. Belyaev, A. Yu. Avksentyev, Vinayak Tilak, Joseph Smart, Alexei Vertiatchikh, Lester F. Eastman:
The investigation of properties of electron transport in AlGaN/GaN heterostructures. 575-577 - Victor Ovchinnikov, V. Sokolov, S. Franssila:
Luminescence study of silicon nanostructures prepared by ion beam mixing. 579-581 - Karel Král, P. Zdenek, Z. Khás, Michal Cernanský:
Optical spectra of quantum dot aggregates in sub-wetting layer region. 583-585 - Daoguang Liu, Siliu Xu, Kaicheng Li, Jin Zhang, Rongkan Liu, Yukui Liu, Zhengfan Zhang, Gangyi Hu, Yue Hao:
Growth and quality control of MBE-based SiGe-HBT for amplifier applications. 587-589 - Drago Resnik, Danilo Vrtacnik, Uros Aljancic, Matej Mozek, Slavko Amon:
Different aspect ratio pyramidal tips obtained by wet etching of (100) and (111) silicon. 591-593 - Adalberto Balzarotti, M. Fanfoni, F. Patella, Fabrizio Arciprete, Ernesto Placidi:
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy. 595-597 - K. F. Vaz, F. A. P. Osório, A. N. Borges, P. C. M. Machado:
'Atomistic' simulation of ultra-submicron MESFETs. 599-602 - Javier Aizpurua, Garnett W. Bryant, W. Jaskólski:
Atomistic description of the electronic structure of T-shaped quantum wires. 603-606 - Changman Kim, Yasushi Oikawa, Jaesoo Shin, Hajime Ozaki:
Co-dot-array formation along scratches on Si(111) surface by electroless deposition. 607-609 - Kanji Iizuka, K. Mori, T. Suzuki:
Effects of growth interruption during the formation of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy. 611-613 - K. Masuda-Jindo, R. Kikuchi:
Study of the misfit dislocations in semiconductor heterostructures by density functional TB molecular dynamics and path probability methods. 615-617 - Angiolino Stella, S. Achilli, Marco Allione, Andrea Marco Malvezzi, Maddalena Patrini, R. Kofman:
Second-harmonic generation in gallium nanoparticle monolayers across the solid-to-liquid phase transition. 619-621 - L. C. de Carvalho, C. N. Dos Santos, H. W. Leite Alves, J. L. A. Alves:
Theoretical studies of poly(para-phenylene vinylene) (PPV) and poly(para-phenylene) (PPP). 623-625 - Ana Paula Mousinho, Ronaldo Domingues Mansano, Marcos Massi, Luís da Silva Zambom:
High density plasma chemical vapor deposition of diamond-like carbon films. 627-629 - M. J. da Silva, Sandro Martini, T. E. Lamas, A. A. Quivy, E. C. F. da Silva, J. R. Leite:
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum. 631-633 - Marcos Massi, J. M. J. Ocampo, H. S. Maciel, K. Grigorov, C. Otani, L. V. Santos, Ronaldo Domingues Mansano:
Plasma etching of DLC films for microfluidic channels. 635-638 - M. Guerino, Marcos Massi, H. S. Maciel, C. Otani, Ronaldo Domingues Mansano:
The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films. 639-641