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"Bias Temperature Instability (BTI) of High-Voltage Devices for Memory ..."

J. P. Bastos et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764547

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-16

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  - conf/irps/BastosOFTTCDKRC22
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  - https://dblp.org/rec/conf/irps/BastosOFTTCDKRC22
J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi:
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS 2022: 1-6

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