"DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for ..."

Barry J. O'Sullivan et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529379

access: closed

type: Conference or Workshop Paper

metadata version: 2025-06-04

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Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, Aarti Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS 2024: 1-9

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