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ORCIDKatja Waschneck
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- affiliation: Infineon Technologies AG, Neubiberg, Germany
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2020 – today
- 2024
[c7]Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3- 2023
- [c6]Maximilian W. Feil
, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10 - 2021
- [c5]Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger:
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. IRPS 2021: 1-7
2010 – 2019
- 2019
- [c4]Christian Schlünder, Katja Waschneck, Peter Rotter, Susanne Lachenmann, Hans Reisinger, Franz Ungar, Georg Georgakos:
From Device Aging Physics to Automated Circuit Reliability Sign Off. IRPS 2019: 1-12 - 2018
- [j1]Christian Schlünder, Katja Puschkarsky, Gunnar Andreas Rott, Wolfgang Gustin, Hans Reisinger:
NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification. Microelectron. Reliab. 82: 1-10 (2018) - [c3]Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser:
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI. ESSDERC 2018: 218-221 - [c2]Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer:
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2 - [c1]Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger:
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. IRPS 2018: 3
Coauthor Index
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