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Philippe Eudeline
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Journal Articles
- 2012
- [j8]Jean-Baptiste Fonder, Olivier Latry
, Cedric Duperrier, M. Stanislawiak, Hichame Maanane
, Philippe Eudeline, Farid Temcamani:
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life. Microelectron. Reliab. 52(11): 2561-2567 (2012) - 2011
- [j7]Loïc Lachèze, Olivier Latry
, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane
, Jean Pierre Sipma, F. Cornu, Philippe Eudeline:
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application. Microelectron. Reliab. 51(8): 1289-1294 (2011) - [j6]Mohamed Ali Belaïd
, M. Gares, K. Daoud, Philippe Eudeline:
S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. Microelectron. Reliab. 51(9-11): 1551-1556 (2011) - 2010
- [j5]Olivier Latry
, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane
, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi:
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications. Microelectron. Reliab. 50(9-11): 1574-1576 (2010) - 2007
- [j4]M. Gares, Mohamed Ali Belaïd
, Hichame Maanane
, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline:
Study of hot-carrier effects on power RF LDMOS device reliability. Microelectron. Reliab. 47(9-11): 1394-1399 (2007) - 2006
- [j3]Hichame Maanane
, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd
, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline:
Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. Microelectron. Reliab. 46(5-6): 994-1000 (2006) - [j2]M. Gares, Hichame Maanane
, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd
, Karine Mourgues, C. Tolant, Philippe Eudeline:
Hot carrier reliability of RF N- LDMOS for S Band radar application. Microelectron. Reliab. 46(9-11): 1806-1811 (2006) - 2004
- [j1]Hichame Maanane
, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd
, Karine Mourgues, Philippe Eudeline, K. Ketata:
Reliability study of Power RF LDMOS for Radar Application. Microelectron. Reliab. 44(9-11): 1449-1454 (2004)
Conference and Workshop Papers
- 2014
- [c3]Pascal Dherbécourt, Olivier Latry
, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline:
A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications). ICMCS 2014: 1573-1578 - 2012
- [c2]Mohamed Ali Belaïd
, M. Gares, K. Daoud, Philippe Eudeline:
Failure analysis of hot-electron effect on power RF N-LDMOS transistors. DTIS 2012: 1-6 - 2006
- [c1]M. Gares, Hichame Maanane
, Mohamed Ali Belaïd
, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline:
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. CCECE 2006: 382-385
Coauthor Index
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