Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Failure analysis of hot-electron effect on power RF N-LDMOS transistors."

Mohamed Ali Belaïd et al. (2012)

> Home

Details and statistics

DOI: 10.1109/DTIS.2012.6232981

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/dtis/BelaidGDE12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/dtis/BelaidGDE12
Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline:
Failure analysis of hot-electron effect on power RF N-LDMOS transistors. DTIS 2012: 1-6

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.