Volume 9, Number 1, January 1990
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Volume 9, Number 2, February 1990
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Don Stark ,
Mark Horowitz :
Techniques for calculating currents and voltages in VLSI power supply networks.
126-132
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Volume 9, Number 3, March 1990
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Niraj K. Jha :
Strong fault-secure and strongly self-checking domino-CMOS implementations of totally self-checking circuits.
332-336
Volume 9, Number 4, April 1990
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Daniel Weise :
Multilevel verification of MOS circuits.
341-351
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K. Iwasaki ,
F. Arakawa :
An analysis of the aliasing probability of multiple-input signature registers in the case of a 2m -ary symmetric channel.
427-438
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Volume 9, Number 5, May 1990
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Paul Molitor :
Constrained via minimization for systolic arrays.
537-542
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Ernst Rank ,
Ulrich Weinert :
A simulation system for diffusive oxidation of silicon: a two-dimensional finite element approach.
543-550
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Volume 9, Number 6, June 1990
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journals/tcad/Dervisoglu90 Bulent I. Dervisoglu :
Application of scan hardware and software for debug and diagnostics in a workstation environment.
612-620
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Joel W. Gannett :
SHORTFINDER: a graphical CAD tool for locating net-to-net shorts in VLSI chip layouts.
669-674
Volume 9, Number 7, July 1990
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Volume 9, Number 8, August 1990
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Nam Ling ,
Magdy A. Bayoumi :
Systolic temporal arithmetic: a new formalism for specification and verification of systolic arrays.
804-820
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Yu Hen Hu ,
Sao-Jie Chen :
GM Plan: a gate matrix layout algorithm based on artificial intelligence planning techniques.
836-845
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Volume 9, Number 9, September 1990
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Resve A. Saleh ,
Jacob K. White :
Accelerating relaxation algorithms for circuit simulation using waveform-Newton and step-size refinement.
951-958
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Bill Lin ,
A. Richard Newton :
A circuit disassembly technique for synthesizing symbolic layouts from mask descriptions.
959-969
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Chung-Yu Wu ,
Ming-Chuen Shiau :
Efficient physical timing models for CMOS AND-OR-inverter and OR-AND-inverter gates and their applications.
1002-1009
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Volume 9, Number 10, October 1990
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Jonathan Rose :
Parallel global routing for standard cells.
1085-1095
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Volume 9, Number 11, November 1990
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journals/tcad/Schroeder90 D. Schroeder :
Three-dimensional nonequilibrium interface conditions for electron transport at band edge discontinuities.
1136-1140
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Gerhard K. M. Wachutka :
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling.
1141-1149
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Paolo Lugli :
The Monte Carlo method for semiconductor device and process modeling.
1164-1176
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Valery Axelrad :
Fourier method modeling of semiconductor devices.
1225-1237
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Volume 9, Number 12, December 1990
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