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"Three-dimensional effects due to the field oxide in MOS devices analyzed ..."

Martin Thurner, Siegfried Selberherr (1990)

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DOI: 10.1109/43.57786

access: closed

type: Journal Article

metadata version: 2020-09-24

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Martin Thurner, Siegfried Selberherr:
Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 9(8): 856-867 (1990)

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