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2020 – today
- 2021
[c11]Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari
, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra:
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs. IRPS 2021: 1-8- [c10]Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo:
TDDB Reliability in Gate-All-Around Nanosheet. IRPS 2021: 1-6 - 2020
- [c9]Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra:
Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. IRPS 2020: 1-6 - [c8]Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan:
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. IRPS 2020: 1-6
2010 – 2019
- 2019
- [c7]H. Huang, P. S. McLaughin, James J. Kelly, C.-C. Yang, Richard G. Southwick, M. Wang, Griselda Bonilla, Gauri Karve:
Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch. IRPS 2019: 1-5 - [c6]Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra:
On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs. IRPS 2019: 1-8 - [c5]Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis:
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. IRPS 2019: 1-6 - 2018
- [c4]Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis:
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics. IRPS 2018: 6 - 2017
- [c3]ChoongHyun Lee, Richard G. Southwick, Shogo Mochizuki, Paul Jamison, Ruqiang Bao, Rajan Pandey, Aniruddha Konar, Takashi Ando, Vijay Narayanan, Bala Haran, Hemanth Jagannathan:
Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS. ASICON 2017: 573-576 - [c2]Miaomiao Wang, Xin Miao, James H. Stathis, Richard G. Southwick:
Hot carrier reliability in ultra-scaled sige channel p-FinFETs. ASICON 2017: 666-669 - 2015
- [c1]P. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, Richard G. Southwick, Eduard Cartier:
NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation. IRPS 2015: 2
Coauthor Index
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